金黄色葡萄球菌肠毒素C2的结构特征与生物学功能研究

通过PCR技术对Staphylococcal enterotoxin C2(SEC2)的氨基端和羧基端部位进行删除突变。研究结果显示删除羧基端77个氨基酸对SEC2超抗原和致热活性没有显著影响，但更进一步的删除导致SEC2活性显著降低。而少量氨基端残基删除则可导致SEC2超抗原活性显著降低，说明SEC2超抗原活性主要集中于其氨基端部位。以上研究结果也表明SEC2分子的完整性并不是其超抗原活性所必需的。 对二硫环及Zn结合位点配位组氨酸残基在SEC2分子中的生物学功能进行研究。以定点突变技术构建SEC2二硫环突变蛋白，从而干扰二硫键的形成。研究结果表明干扰二硫环形成对SEC2的超抗原、催吐和致热等活性均有显著影响，说明二硫环在维持SEC2生物学活性方面具有重要作用。此外，针对Zn结合位点配位组氨酸残基的研究结果显示突变118位和122位组氨酸后对SEC2的超抗原活性没有有显著影响，而47位组氨酸的突变导致SEC2分子的超抗原活性显著降低。动物实验结果显示分别突变118位和122位组氨酸残基后均导致SEC2分子催吐及热源活性显著降低，而47位组氨酸突变仍具有较高的催吐和致热活性。说明Zn结合位点配位组氨酸残基在SEC2的催吐、致热和超抗原活性中扮演了重要的作用，并进一步揭示肠毒素诱导的超抗原和致热活性之间没有明显的相关性。 以Leu及Glu分别替代20和22位氨基酸残基后SEC2超抗原活性有显著提高，并将具有减毒作用的组氨酸位点突变引入上述活性增强的SEC2突变，从而构建减毒突变蛋白。结果显示引入118和122位组氨酸双突变后突变蛋白保留了与SEC2相当的超抗原和抗肿瘤活性，但与SEC2相比致热活性有显著下降，为减毒SEC2超抗原药物的开发提供了可能性。 为探索金黄色葡萄球菌的体内基因突变方法，本研究对金黄色葡萄球菌基因组中的α-溶血毒素基因进行敲除。首先构建同源重组质粒pMHL-α，经金黄色葡萄球菌RN4220修饰后再通过原生质体转入金黄色葡萄球菌SM-01。含重组质粒pMHL-α的金黄色葡萄球菌SM-01在42℃诱导条件下培养多代，最终筛选出α-溶血毒素基因缺失菌株。经序列分析和血平板溶血实验结果证实最终获得产SEB金黄色葡萄球菌α-HL缺失菌株。为构建产减毒肠毒素的金黄色葡萄球菌基因工程菌株提供了一定的理论基础和方法。

Thermodynamic theory of the Tolman's length

There still exists controversy on the sign and magnitude of the Tolman's length and the Tolman's gap. Further experimental, computational and theoretical investigations on them are needed to solve this problem. In 2006, Blokhuis and Kuipers obtained a rigorous relationship between the Tolman's length and other thermodynamic quantities for the single-component liquid-vapour system. In the present paper, we derive two general relationships between the Tolman's length and other thermodynamic quantities for the single-component liquid vapour system. The relationship derived by Blokhuis and Kuipers and an earlier result turn out to be two special cases of our results.

A fixed arc length direct current plasma torch for reduced pressure deposition of thin films

Because of its high energy density direct current(dc)thermal plasmas are widely accepted as a processing medium which facilitates high processing rates high fluxes of radical species the potential for smaller jnstallations a wide choice of reactants and high quench rates[1].A broad range of industrial processing methods have been developed based on dc plasma technology. However,nonstationary features limited new applications of dc plasma in advanced processing, where reliability£¬reproducibility and precise controllability are required£. These challenges call for better understanding of the arc and jet behavior over a wide range of generating parameters and a comprehensive control of every aspect of lhe plasma processing.