977 resultados para visible image sensor


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Oxidovanadium(IV) complexes, VO(acac)(L)Cl] (1), VO(cur)(L)Cl] (2), and VO(scur)(L)Cl] (3) {acac = acetylacetonate, cur = curcumin monoanion, scur = diglucosylcurcumin monoanion, L = 11-(9-acridinyl)dipyrido3, 2-a:2',3'-c]phenazine (acdppz)}, were prepared and characterized. The complexes are non-electrolytic in DMF and 1:1 electrolytic in aqueous DMF. The one-electron paramagnetic complexes showed a d-d band near 725 nm in aqueous DMF and green emission near 520 nm in aqueous DMSO. The complexes exhibited an irreversible V-IV/V-III redox response near -0.85 V versus SCE in aqueous DMF. The complexes showed good binding strengths to calf thymus DNA (K-b: 3.1x10(5)-9.6x10(5) M-1) and efficient pUC19 DNA photocleavage activity in red light of 705 and 785 nm by singlet oxygen (O-1(2)) pathway. Complexes 1 and 2 exhibited significant photocytotoxicity (IC50: 0.1-1.0 M) in visible light (400-700 nm) with low dark toxicity (IC50: >20 M) in HeLa and HaCaT cells. Complex 3 was cytotoxic in both light and dark. DNA ladder formation experiments indicated cell death via apoptotic pathway. Confocal microscopy done with 1 and 2 revealed primarily cytosolic localization of the complexes with significant presence of the complex in the mitochondria as evidenced from the imaging data using mitotracker red.

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Transparent conducting ZnO films were prepared at substrate temperature 400 degrees C with different film thicknesses by nebulizer spray pyrolysis method on glass substrates. XRD studies reveal that the films are polycrystalline in nature having hexagonal crystal structure with preferred grain orientations along (0 0 2) and (1 0 1) directions. The crystallite size increases along (0 0 2) plane with the thickness increase and attains a maximum 109 nm for 913 nm film thickness. Analysis of structural parameters indicates that the films having thickness 913 nm are found to have minimum dislocation density and strain values. The HRSEM measurements show that the surface morphology of the films also changes with film thickness. EDAX estimates the average atomic percentage ratio of Zn and O in the ZnO films. Optical studies reveal the band gap energy decrease from 3.27 to 3.14 eV with increase of film thickness. Room temperature PL spectra show the near-band-edge emission and deep-level emission due to the presence of defects in the ZnO thin films. Impedance spectroscopy analysis indicates that grain boundary resistance decreases with the increasing ammonia concentration up to 500 ppm and the maximum sensitivity is found to be 1.7 for 500 ppm of ammonia. (C) 2014 Elsevier Ltd. All rights reserved.