Magnetic and spin evolution of pulsars

We explore the consequences of the model of spin-down-induced flux expulsion for the magnetic field evolution in solitary as well as in binary neutron stars. The spin evolution of pulsars, allowing for their field evolution according to this model, is shown to be consistent with the existing observational constraints in both low- and high-mass X-ray binary systems. The contribution from pulsars recycled in massive binaries to the observed excess in the number of low-field (10(11)-10(12) G) solitary pulsars is argued to be negligible in comparison with that of normal pulsars undergoing a 'restricted' field decay predicted by the adopted field decay model. Magnetic fields of neutron stars born in close binaries with intermediate- or high-mass main-sequence companions are predicted to decay down to values as low as similar to 10(6) G, which would leave them unobservable as pulsars during most of their lifetimes. The post-recycling evolution of some of these systems can, however, account for the observed binary pulsars having neutron star or massive white dwarf companions. Pulsars recycled in the disc population low-mass binaries are expected to have residual fields greater than or similar to 10(8) G, while for those processed in globular clusters larger residual fields are predicted because of the lower field strength of the neutron star at the epoch of binary formation. A value of tau similar to 1-2 x 10(7) yr for the mean value of the Ohmic decay time-scale in the crusts of neutron stars is suggested, based on the consistency of the model predictions with the observed distribution of periods and magnetic fields in the single and binary pulsars.

Pillaring of smectites using an aluminium oligomer: A study of pillar density and thermal stability

Two smectite samples having different layer charges were pillared using hydroxy aluminium oligomers at a OH/Al ratio of 2.5 and at pH 4.3 to 4.6. Pillaring was carried out at different conditions such as ageing, temperature and base addition time of the pillaring solution, and also in the presence of nonionic surfactant polyoxyethylene sorbitanmonooleate (Tween-80). The primary objective of preparing at different conditions was to introduce varied quantities of aluminium oligomer between the layers and to study its effect on the properties of the pillared products. A simple method has been followed to estimate the amount of interlayer aluminium. A quantity called pillar density number (PDN) based on the ratio of interlayer Al adsorbed to CEC of the parent clay has been effectively used to evaluate the nature of the resulting pillared product. PDN, for a given clay, was found to correlate well with the sharpness of the d(001) peaks for the air dried samples. The calculated number of pillars, varied from 3.00 x 10(18) to 5.32 x 10(18) per meq charge. The present study shows that a higher value of PDN is indicative of better thermal stability. Pillar density number may be conveniently used as a measure of the thermal stability of pillared samples.

Variational principles in evolution

For a one-locus selection model, Svirezhev introduced an integral variational principle by defining a Lagrangian which remained stationary on the trajectory followed by the population undergoing selection. It is shown here (i) that this principle can be extended to multiple loci in some simple cases and (ii) that the Lagrangian is defined by a straightforward generalization of the one-locus case, but (iii) that in two-locus or more general models there is no straightforward extension of this principle if linkage and epistasis are present. The population trajectories can be constructed as trajectories of steepest ascent in a Riemannian metric space. A general method is formulated to find the metric tensor and the surface-in the metric space on which the trajectories, which characterize the variations in the gene structure of the population, lie. The local optimality principle holds good in such a space. In the special case when all possible linkage disequilibria are zero, the phase point of the n-locus genetic system moves on the surface of the product space of n higher dimensional unit spheres in a certain Riemannian metric space of gene frequencies so that the rate of change of mean fitness is maximum along the trajectory. In the two-locus case the corresponding surface is a hyper-torus.

Thermal and electrical properties of AgI-based composites

AgI-based composites with a general formula AgI---MxOy (MxOy = ZrO2, CeO2, Fe2O3, Sm2O3, MoO3 and WO3) have been studied in detail. The enhancement in the conductivity of AgI and its unusual thermal stability and amorphization are explained assuming a chemical interaction at the oxide-AgI interface.

Thermal expansion of irradiated polyvinyl chloride from 10 K to 340 K

The coefficient of thermal expansion is measured for irradiated Polyvinyl Chloride (PVC) from 10K to 340K. The samples of PVC are irradiated, up to 500 Mrad in steps of 100 Mrad, in air at room temperature by using Co gamma rays with a dose rate of 0.3 Mrad/h. The PVC is an amorphous sample which is confirmed by X-ray diffraction. The coefficient of thermal expansion is found to decrease with radiation dose from 10K to 110K and it increaseswith radiation dose from 110K to 340K. The results are explained on the basis of radiation induced degradation of the sample.

Experimental results of an activated carbon-HFC 134a adsorption cooling system for thermal management of electronics

Results of performance measurement of a small cooling capacity laboratory model of an adsorption refrigeration system for thermal management of electronics are compiled. This adsorption cooler was built with activated carbon as the adsorbent and HFC 134a as the refrigerant to produce a cooling capacity under 5 W using waste heat up to 90 degrees C. The thermal compression process is obtained from an ensemble of four solid sorption compressors. Parametric study was conducted with cycle times of 16 and 20 min, heat source temperatures from 73 to 87 degrees C and cooling loads from 3 to 4.9W. Overall system performance is analyzed using two indicators, namely, cooling effectiveness and normalized exergetic efficiency. (C) 2011 Elsevier Ltd. All rights reserved.

Rapid thermal processed thin films of niobium pentoxide (Nb2 O5) deposited by reactive magnetron sputtering

Niobium pentoxide thin films have been deposited on silicon and platinum-coated silicon substrates by reactive magnetron sputtering. The as-deposited films were amorphous and showed good electrical properties in terms of a dielectric permittivity of about 30, and leakage current density of 10(-6) A cm(-2) al a field of 120 kV cm(-1). A rapid thermal annealing process at 800 degrees C further increased the dielectric constant to 90 and increased the leakage current density to 5 x 10(-6) A cm(-2). The current-voltage characteristics observed at low and high fields suggested a combination of phenomena at different regimes of applied electric field. The capacitance-voltage characteristics performed in the metal-insulator-semiconductor configuration indicated good electronic interfaces with a nominal trap density of 4.5 x 10(12) cm(-2) eV(-1), which is consistent with the behavior observed with conventional dielectrics such as SiO2 on silicon surfaces.

Rapid thermal processed thin films of reactively sputtered Ta2O5

Rapid thermal processed thin films of reactively sputtered tantalum pentoxide Ta2O5 thin films have been deposited on silicon and platinum coated silicon substrates by reactive magnetron sputtering. The as-deposited films were amorphous and showed good electrical properties in terms of a dielectric permittivity of about 24 and leakage current density of 9 x 10(-8) A cm(-2). A rapid thermal annealing process at temperatures above 700 degrees C crystallized the films, increased the dielectric relative permittivity, and decreased the leakage current. The dielectric constant for a film rapidly annealed at 850 degrees C increased to 45 and its leakage current density lowered to 2 x 10(-8) A cm(-2). The dielectric measurements in the MIS configuration showed that Ta2O5 might be used as a dielectric material instead of SiO2 or Si3N4 for integrated devices. The current voltage characteristics observed at low and high fields suggested different conduction mechanisms.

Surfactant lipids containing aromatic units produce vesicular membranes with high thermal stability

Six new vesicle-forming, cationic surfactant lipids are synthesized. Four of them contain 'flat' aromatic units at different locations of hydrophobic segments. In order to estimate the influence of aromatic units in the lipid monomer two other surfactant lipids of related structure with n-butyloxy units in the places of aromatic groups were also prepared. Transmission electron microscopy confirmed the vesicular membrane formation from these newly synthesized lipids. DSC or temperature-dependent keto-enol tautomerism of benzoylacetanilide-doped vesicles reveal a remarkable increase in the thermal stability of the membranes formed from aromatic surfactant lipids in contradistinction to their counterparts that contain n-butyloxy units. The enhanced thermal stability originates presumably as a consequence of inter-monomer stacking.

Thermal expansion studies of substituted CTP derivatives

Several new Na, Y and Zr substituted derivatives of Ca-0.5 Ti-2(PO4)(3) (CTP) have been synthesized. These derivatives retain the hexagonal structure of the parent (CTP) compound with minor changes in lattice parameters. Linear thermal expansion coefficients (alpha) have been obtained using a high sensitivity dilatometer.