Relative intensity noise transfer in higher-order distributed amplification through ultra-long fiber cavities

Among the different possible amplification solutions offered by Raman scattering in optical fibers, ultra-long Raman lasers are particularly promising as they can provide quasi-losless second order amplification with reduced complexity, displaying excellent potential in the design of low-noise long-distance communication systems. Still, some of their advantages can be partially offset by the transfer of relative intensity noise from the pump sources and cavity-generated Stokes to the transmitted signal. In this paper we study the effect of ultra-long cavity design (length, pumping, grating reflectivity) on the transfer of RIN to the signal, demonstrating how the impact of noise can be greatly reduced by carefully choosing appropriate cavity parameters depending on the intended application of the system. © 2010 Copyright SPIE - The International Society for Optical Engineering.

Self-pulsating nonlinear systems via dissipative parametric instability

The recently discovered dissipative parametric instability is presented in the framework of the universal complex Ginzburg-Landau equation. The pattern formation associated with the instability is discussed in connection to the relevant applications in nonlinear photonics especially as a new tool for pulsed lasers design.

Modeling 2R regenerator based on High Nonlinear Dispersion Imbalanced Loop Mirror (HN-DILM)

The model of Reshaping and Re-amplification (2R) regenerator based on High Nonlinear Dispersion Imbalanced Loop Mirror (HN-DILM) has been designed to examine its capability to reduce the necessary of fiber loop length and input peak power by deploying High Non linear Fiber (HNLF) compared to Dispersion Shifted Fiber (DSF). The simulation results show by deployed a HNLF as a nonlinear element in Dispersion Imbalanced Loop Mirror (DILM) requires only 400mW peak powers to obtain a peak of transmission compared to DSF which requires a higher peak power at 2000mW to obtain a certain transmissivity. It also shows that HNLF required shorter fiber length to achieve the highest transmission. The 2R regenerator also increases the extinction ratio (ER) of the entire system. © 2010 IEEE.

Collective excitability, synchronization, and array-enhanced coherence resonance in a population of lasers with a saturable absorber

In this article we present a numerical study of the collective dynamics in a population of coupled semiconductor lasers with a saturable absorber, operating in the excitable regime under the action of additive noise. We demonstrate that temporal and intensity synchronization takes place in a broad region of the parameter space and for various array sizes. The synchronization is robust and occurs even for a set of nonidentical coupled lasers. The cooperative nature of the system results in a self-organization process which enhances the coherence of the single element of the population too and can have broad impact for detection purposes, for building all-optical simulators of neural networks and in the field of photonics-based computation.

Surfactant-mediated variation of band-edge emission in CdS nanocomposites

The optical-structural characteristics of the direct optical band-gap semiconducting series of surfactant template-mediated laminar (CdS)x(CdCl2)y(CnH2n+4N)z nanocomposites are reported. X-ray diffraction measurements of the nanocomposites exhibited interlaminar distances in the range 2.9-3.6 nm with observations of eighth order {0 0 l} diffraction planes indicative of a high degree of laminarity and crystallographic order. Diffuse reflectance measurements have determined that the profile of their emission spectrum is that of a direct band-gap with absorption edges in the range 2.11-2.40 eV, depending on the CdS mole fraction in the nanocomposite. Photoluminescence (PL) excitation and time-resolved PL spectroscopies give an estimate of the maximum relative absorbance of the nanocomposites at ∼420 nm while the minimum was observed at ∼560 nm. The main emission was observed at ∼700 nm with emission from doubly ionized sulphur vacancies observed at ∼615 nm at room temperature. The CdS-containing nanocomposite is thus a surfactant-mediated modular system with variable band-gap energy emission.

Pitting and porous layer formation on n-InP anodes

Surface pitting occurs when InP electrodes are anodized in KOH electrolytes at concentrations in the range 2 - 5 mol dm-3. The process has been investigated using atomic force microscopy (AFM) and the results correlated with cross-sectional transmission electron microscopy (TEM) and electroanalytical measurements. AFM measurements show that pitting of the surface occurs and the density of pits is observed to increase with time under both potentiodynamic and potentiostatic conditions. This indicates a progressive pit nucleation process and implies that the development of porous domains beneath the surface is also progressive in nature. Evidence for this is seen in plan view TEM images in which individual domains are seen to be at different stages of development. Analysis of the cyclic voltammograms of InP electrodes in 5 mol dm-3 KOH indicates that, above a critical potential for pit formation, the anodic current is predominantly time dependent and there is little differential dependence of the current on potential. Thus, pores continue to grow with time when the potential is high enough to maintain depletion layer breakdown conditions.

Resist-substrate interface tailoring for generating high density arrays of Ge and Bi2Se3 nanowires by electron beam lithography

The authors report a chemical process to remove the native oxide on Ge and Bi2Se3 crystals, thus facilitating high-resolution electron beam lithography (EBL) on their surfaces using a hydrogen silsesquioxane (HSQ) resist. HSQ offers the highest resolution of all the commercially available EBL resists. However, aqueous HSQ developers such as NaOH and tetramethylammonium hydroxide have thus far prevented the fabrication of high-resolution structures via the direct application of HSQ to Ge and Bi2Se3, due to the solubility of components of their respective native oxides in these strong aqueous bases. Here we provide a route to the generation of ordered, high-resolution, high-density Ge and Bi2Se3 nanostructures with potential applications in microelectronics, thermoelectric, and photonics devices.