Observation of the current-voltage plateau-like structure of resonant tunnelling diode with prewells under different magnetic fields

We have grown resonant tunnelling diodes (RTDs) with different sized emitter prewells and without a prewell. The current-voltage (I-V) characteristics of them in different magnetic fields were investigated. Two important phenomena were observed. First, a high magnetic field can destroy the plateau-like structure in the I-V curves of the RTD. This phenomenon is ascribed to the fact that the high magnetic field will demolish the coupling between the energy level in the main quantum well and that in the emitter quantum well or in the prewell. Secondly, the existence and size of the prewell are also important factors influencing the plateau-like structure.

The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N

Diluted magnetic semiconductor (Ga,Mn)N were prepared by the implantation of Mn ions into GaN/Al2O3 substrate. Clear X-ray diffraction peak from (Ga,Mn)N is observed. It indicates that the solid solution (Ga,Mn)N phase was formed with the same lattice structure as GaN and different lattice constant. Magnetic hysteresis-loops of the (Ga,Mn)N were obtained at room temperature (293 K) with the coercivity of about 2496.97 A m(-1). (C) 2003 Elsevier B.V. All rights reserved.

Spin-dependent transport through Cd1-xMnxTe diluted magnetic semiconductor quantum dots

We theoretically investigate the spin-dependent transport through Cd1-xMnxTe diluted magnetic semiconductor (DMS) quantum dots (QD's) under the influence of both the external electric field and magnetic field using the recursion method. Our results show that (1) it can get a 100% polarized electric current by using suitable structure parameters; (2) for a fixed Cd1-xMnxTe DMS QD, the wider the system is, the more quickly the transmission coefficient increases; (3) for a fixed system length, the transmission peaks of the spin-up electrons move to lower Fermi energy with increasing Cd1-xMnxTe DMS QD radius, while the transmission of the spin-down electrons is almost unchanged; (4) the spin-polarized effect is slightly increased for larger magnetic fields; (5) the external static electric field moves the transmission peaks to higher or lower Fermi energy depending on the direction of the applied field; and (6) the spin-polarized effect decreases as the band offset increases. Our calculated results may be useful for the application of Cd1-xMnxTe DMS QD's to the spin-dependent microelectronic and optoelectronic devices.

Suppression of exciton recombination in symmetric GaAs0.7Sb0.3/GaAs/GaAs0.7P0.3 coupled quantum wells induced by an in-plane magnetic field

Suppression of the exciton recombination in GaAs0.7Sb0.3/GaAs/GaAs0.7P0.3 coupled quantum well (CQW) induced by an external magnetic field is investigated theoretically. Unlike the usual electro-Stark effect, the exciton energy dispersion of an exciton is modified by an external in-plane magnetic field, the ground state of the magnetoexciton shifts from a zero in-plane center of mass (CM) momentum to a finite CM momentum, and the Lorentz force induces the spatial separation of electron and hole. Consequently, this effect renders the ground state of magnetoexciton stable against radiative recombination due to momentum conservation. This effect depends sensitively on the thickness and height of GaAs0.7Sb0.3 layer, therefore it could provide us useful infometion about the band alignment of CQW. (C) 2004 American Institute of Physics.

Spin-polarized ballistic transport in diluted magnetic semiconductor quantum wire systems

The energy dispersion of an electron in a double quantum wire with a diluted magnetic semiconductor barrier in between is calculated. An external magnetic field modifies significantly the energy dispersion of the electron which is different for the two spin states. The conductance exhibits many interesting peaks and dips which are directly related to the energy dispersions of the different electron spin states. These phenomena are attributed to the interwell coupling which can be tuned by the magnetic field due to the s-d exchange interaction.

Mean-field study of Fe2+- and Co2+-doped diluted magnetic semiconductors

Based on a modified mean-field model, we calculate the Curie temperatures of Fe2+- and Co2+-doped diluted magnetic semiconductors (DMSs) and their dependence on the hole concentration. We find that the Curie temperatures increase with an increase in hole concentration and the relationship T(C)proportional to p(1/3) also approximately holds for Fe2+- and Co2+-doped systems with moderate hole concentration. For either low or high hole concentrations, however, the p(1/3) law is violated due to the anomalous magnetization of the Fe2+ and Co2+ ions, and the nonparabolic nature of the hole bands. Further, the values of T-C for Fe2+- and Co2+-doped DMSs are significantly higher than those for Mn2+-doped DMSs, due to the larger exchange interaction strength.

Effects of shape and magnetic field on the optical properties of wurtzite quantum rods

The optical properties of quantum rods in the absence and presence of the magnetic field are studied in the framework of effective-mass envelope function theory. The two-dimensional (2D) and 1D transition dipoles of wurtzite quantum rods are investigated. It is found that the transition dipoles change from 2D to 1D as the aspect ratio of the ellipsoid increases, in agreement with the experimental results. The linear polarization factors of optical transitions of quantum rods with critical aspect ratio are zero at every orientation of the wave propagation. So quantum rods with critical aspect ratio have isotropic transition dipoles. Due to the 2D or 1D transition dipoles, the linear polarization factors of optical transitions of quantum rods change from negative or positive values to zero as the orientation of the wave propagation changes from the x axis of the crystal structure to the z axis, in agreement with the experimental results. Under magnetic field applied along the z axis of the crystal structure, the negative linear polarization factors in the 2D transition dipole case decrease as the magnetic field increases, while under magnetic field applied along the x axis, the negative linear polarization factors increase as the magnetic field increases. The antisymmetric Hamiltonian is very important to these effects of the magnetic field. It is found that quantum rods with a given radius at a given temperature have dark excitons in a range of aspect ratio. The dimensions along the x, y axes of the crystal structure play opposite roles to the dimension along the z axis on the dark exciton phenomenon. Dark excitons become bright under appropriate magnetic field.

Thermal entanglement in a two-qubit Heisenberg XXZ spin chain under an inhomogeneous magnetic field

The thermal entanglement in a two-qubit Heisenberg XXZ spin chain is investigated under an inhomogeneous magnetic field b. We show that the ground-state entanglement is independent of the interaction of z-component J(z). The thermal entanglement at the fixed temperature can be enhanced when J(z) increases. We strictly show that for any temperature T and J(z), the entanglement is symmetric with respect to zero inhomogeneous magnetic field, and the critical inhomogeneous magnetic field b(c) is independent of J(z). The critical magnetic field B-c increases with the increasing parallel to b parallel to but the maximum entanglement value that the system can arrive at becomes smaller.

Transverse magnetic field effect on the current hysteresis of doped GaAs/AlAs superlattice

The influence of a transverse magnetic field up to 13 T at 1.6 K on the current-voltage, I (V), characteristics of a doped GaAs/AlAs superlattice was investigated. Current hysteresis was observed in the domain formation regions of the I (V) at zero magnetic field while applied bias was swept in both up (0-6 V) and down (6-0 V) directions. The magnitude of current hysteresis was reduced and finally disappeared with increasing transverse magnetic field. The effect is explained as the modification of the current density versus electric field characteristic by transverse magnetic fields. Calculated results based on the tunnelling current formula in a superlattice support our interpretation.

A nanowire magnetic memory cell based on a periodic magnetic superlattice

We analyse the operation of a semiconductor nanowire-based memory cell. Large changes in the nanowire conductance result when the magnetization of a periodic array of nanoscale magnetic gates, which comprise the other key component of the memory cell, is switched between distinct configurations by an external magnetic field. The resulting conductance change provides the basis for a robust memory effect, which can be implemented in a semiconductor structure compatible with conventional semiconductor integrated circuits.

Influence of exotic Mn on magnetic properties of YCo5.0-xMnxGa7.0 (0.05 <= x <= 3.0)

The YCo5.0-xMnxGa7.0 compounds crystallize with the ScFe6Ga6-type structure. The lattice of YCo5.0-xMnxGa7.0 expands with the increase of the Mn content for 0.05 <= x <= 2.5, but the lattice of YCo2.0Mn3.0Ga7.0 shrinks compared with YCo2.5Mn2.5Ga7.0. The shrinkage of the lattice is attributed to the magnetostriction of YCo2.0Mn3.0Ga7.0. The substitution of Mn for Co forms magnetic clusters in the antiferromagnetic matrix. The magnetic frustration results in the spin-glass-like behavior for 0.8 <= x <= 1.5 and the difference between zero-field-cooling (ZFC) and field-cooling (FC) magnetizations for x = 2.0, 2.5, and 3.0. A stable long-range magnetic ordering appears among the Mn-centered magnetic clusters with the ordering temperature 110 K for x = 2.0. The hump in the thermomagnetization of YCo3.0Mn2.0Ga7.0 can be attributed to the competitive effects between the thermal fluctuation and the enhanced magnetic interaction. Both the hump and the bifurcation between the ZFC and the FC magnetizations of YCo3.0Mn2.0Ga7.0 occur at lower temperatures as the applied field increases. On the two-step magnetization curve of YCo3.0Mn2.0Ga7.0, the inflection point at 4000 Oe is due to the coercive field, and the magnetic moments in the clusters are tilted to the applied field above 4000 Oe. The magnetic ordering temperature is further increased to 210 K for x = 2.5 and to 282 K for x = 3.0. The spontaneous magnetization of YCo2.0Mn3.0Ga7.0 is 0.575 mu B/f.u. at 5 K with a canted magnetic structure.

Spin relaxation in diluted magnetic semiconductor quantum dots

Electron spin relaxation induced by phonon-mediated s-d exchange interaction in a II-VI diluted magnetic semiconductor quantum dot is investigated theoretically. The electron-acoustic phonon interaction due to piezoelectric coupling and deformation potential is included. The resulting spin lifetime is typically on the order of microseconds. The effectiveness of the phonon-mediated spin-flip mechanism increases with increasing Mn concentration, electron spin splitting, vertical confining strength, and lateral diameter, while it shows nonmonotonic dependence on the magnetic field and temperature. An interesting finding is that the spin relaxation in a small quantum dot is suppressed for strong magnetic field and low Mn concentration at low temperature.

Effects of magnetic field on the electronic structure of wurtzite quantum dots: Calculations using effective-mass envelope function theory

The Hamiltonian of the wurtzite quantum dots in the presence of an external homogeneous magnetic field is given. The electronic structure and optical properties are studied in the framework of effective-mass envelope function theory. The energy levels have new characteristics, such as parabolic property, antisymmtric splitting, and so on, different from the Zeeman splitting. With the crystal field splitting energy Delta(c)=25 meV, the dark excitons appear when the radius is smaller than 25.85 A in the absence of external magnetic field. This result is more consistent with the experimental results reported by Efros [Phys. Rev. B 54, 4843 (1996)]. It is found that dark excitons become bright under appropriate magnetic field depending on the radius of dots. The circular polarization factors of the optical transitions of randomly oriented dots are zero in the absence of external magnetic field and increase with the increase of magnetic field, in agreement with the experimental results. The circular polarization factors of single dots change from nearly 0 to about 1 as the orientation of the magnetic field changes from the x axis of the crystal structure to the z axis, which can be used to determine the orientation of the z axis of the crystal structure of individual dots. The antisymmetric Hamiltonian is very important to the effects of magnetic field on the circular polarization of the optical transition of quantum dots.

Optical and magnetic properties of ZnS nanoparticles doped with Mn2+

ZnS:Mn nanoparticles of the cubic zinc blende structure with the average sizes of about 3 nm were synthesized using a coprecipitation method and their optical and magnetic properties were investigated. Two emission bands were observed in doped nanoparitcles and attributed to the defect-related emission of ZnS and the Mn2+ emission, respectively. With the increase of Mn2+ concentration, the luminescence intensities of these two emission bands increased and the ZnS emission band shifted to lower energy. Based on the luminescence excitation spectra of Mn2+, the 3d(5) level structure of Mn2+ in ZnS nanoparticles is similar to that in bulk ZnS:Mn, regardless of Mn2+ concentration. Magnetic measurements showed that all the samples exhibit paramagnetic behavior and no antiferromagnetic interaction between Mn2+ ions exists, which are in contrast to bulk ZnS:Mn. (c) 2005 Elsevier B.V. All rights reserved.

Structural, magnetic properties and photoemission study of Ni-doped ZnO

Nickel-doped ZnO (Zn1-xNixO) have been produced using rf magnetron sputtering. X-ray diffraction measurements revealed that nickel atoms were successfully incorporated into ZnO host matrix without forming any detectable secondary phase. Ni 2p core-level photoemission spectroscopy confirmed this result and suggested Ni hits it chemical valence of 2 +. According to the . We studied the electronic magnetization measurements, no ferromagnetic but paramagnetic behavior was found for Zn0.86Ni0.14O. We studied the electronic structure of Zn0.86Ni0.14O by valence-band photoemission spectroscopy. The spectra demonstrate a structure at similar to 2 eV below the Fermi energy E-F, which is of Ni 3d origin. No emission was found at E-A, suggesting the insulating nature of the film. (c) 2005 Elsevier Ltd. All rights reserved.