MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications

In this paper we present a novel growth of grade-strained bulk InGaAs/InP by linearly changing group-III TMGa source flow during low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE). The high-resolution X-ray diffraction (HRXRD) measurements showed that much different strain was simultaneously introduced into the fabricated bulk InGaAs/InP by utilizing this novel growth method. We experimentally demonstrated the utility and simplicity of the growth method by fabricating common laser diodes. As a first step, under the injection current of 100 mA, a more flat gain curve which has a spectral full-width at half-maximum (FWHM) of about 120 nm was achieved by using the presented growth technique. Our experimental results show that the simple and new growth method is very suitable for fabricating broad-band semiconductor optoelectronic devices. (C) 2003 Elsevier B.V. All rights reserved.

Silica-based 64-channel arrayed waveguide gratings with double functions

Silica-based 64-channel arrayed waveguide gratings (AWGs) with double functions and 0.4 nm (50 GHz) channel spacing have been designed and fabricated. On the same component, Gauss and flat-top output response spectra are obtained simultaneously. The test results show that when the insertion loss ranges from 3.5 dB to 6 dB,the crosstalk is better than -34 dB, the 1 dB bandwidth is 0.12 nm, the 3 dB bandwidth is 0,218 nm, and the polarization-dependent loss (PDL) is less than 0.5 dB for Gauss response. When the insertion loss ranges,from 5.8 dB to 7.8 dB, the crosstalk is better than -30 dB, the 1 dB bandwidth is 0.24 nm, the 3 dB bandwidth is 0.33 nm, and the PDL is less than 0.2 dB for flat-top response.

Photoluminescence investigation of two-dimensional electron gas in an undoped AlxGa1-xN/GaN heterostructure

Low-temperature photoluminescence measurement is performed on an undoped AlxGa1-xN/GaN heterostructure. Temperature-dependent Hall mobility confirms the formation of two-dimensional electron gas (2DEG) near the heterointerface. A weak photoluminescence (PL) peak with the energy of similar to 79meV lower than the free exciton (FE) emission of bulk GaN is related to the radiative recombination between electrons confined in the triangular well and the holes near the flat-band region of GaN. Its identification is supported by the solution of coupled one-dimensional Poisson and Schrodinger equations. When the temperature increases, the red shift of the 2DEG related emission peak is slower than that of the FE peak. The enhanced screening effect coming from the increasing 2DEG concentration and the varying electron distribution at two lowest subbands as a function of temperature account for such behaviour.