Models for Lateral Dynamic Interaction of High-Speed Trains and Bridges

In this work a methodology for analysing the lateral coupled behavior of large viaducts and high-speed trains is proposed. The finite element method is used for the structure, multibody techniques are applied for vehicles and the interaction between them is established introducing wheel-rail nonlinear contact forces. This methodology is applied for the analysis of the railway viaduct of the R´ıo Barbantino, which is a very long and tall bridge in the north-west spanish high-speed line.

Automatic lateral control for unmanned vehicles via genetic algorithms

It is known that the techniques under the topic of Soft Computing have a strong capability of learning and cognition, as well as a good tolerance to uncertainty and imprecision. Due to these properties they can be applied successfully to Intelligent Vehicle Systems; ITS is a broad range of technologies and techniques that hold answers to many transportation problems. The unmannedcontrol of the steering wheel of a vehicle is one of the most important challenges facing researchers in this area. This paper presents a method to adjust automatically a fuzzy controller to manage the steering wheel of a mass-produced vehicle; to reach it, information about the car state while a human driver is handling the car is taken and used to adjust, via iterative geneticalgorithms an appropriated fuzzy controller. To evaluate the obtained controllers, it will be considered the performance obtained in the track following task, as well as the smoothness of the driving carried out.

On the lateral excitation of shear modes in AlN layered resonators

In this paper we describe the fabrication and frequency characterization of different structures intended for the lateral excitation of shear modes in AlN c-axis-oriented films, which are at the same time designed to minimize the excitation of longitudinal modes. Laterally excited resonators were built on partially metallic (SiO2, W) and insulating (SiOC, Si3N4) acoustic mirrors built on silicon substrates, and on insulating mirrors (SiO2, TaOx) built on insulating glass plates. TiOx seed layers were used to stimulate the growth of highly c-axis oriented AlN films, which was confirmed by XRD and SAW measurements. Coplanar Mo electrodes of different geometries were defined on top of the AlN films to excite the shear modes. All the structures analyzed displayed a clear longitudinal mode, corresponding to an acoustic velocity of 11000 m/s, but a null or extremely weak shear response corresponding to a sound velocity of around 6350 m/s. The simulation of the frequency response based on Mason's model confirms that the shear resonance is extremely weak. The observed longitudinal modes are attributed either to the field applied between the electrodes and a conductive plane (metallic layer or Si substrate) or to the electric field parallel to the c-axis in the edges of the electrodes or in tilted grains. The low excitation of shear modes is attributed to the very low values of electric field strength parallel to the surface.

Investigation of the Epitaxial Graphene/p-SiC Heterojunction

There has been significant research in the study of in-plane charge-carrier transport in graphene in order to understand and exploit its unique electrical properties; however, the vertical graphene–semiconductor system also presents opportunities for unique devices. In this letter, we investigate the epitaxial graphene/p-type 4H-SiC system to better understand this vertical heterojunction. The I–V behavior does not demonstrate thermionic emission properties that are indicative of a Schottky barrier but rather demonstrates characteristics of a semiconductor heterojunction. This is confirmed by the fitting of the temperature-dependent I–V curves to classical heterojunction equations and the observation of band-edge electroluminescence in SiC.

Vertical conduction properties of few-layer epitaxial graphene / n-type 4H-SiC heterojunctions at cryogenic temperatures

Vertical diodes of epitaxial graphene on n 4H-SiC were investigated. The graphene Raman spectraexhibited a higher intensity in the G-line than the 2D-line, indicative of a few-layer graphene film.Rectifying properties improved at low temperatures as the reverse leakage decreased over six ordersof magnitude without freeze-out in either material. Carrier concentration of 10 16 cm 3in the SiCremained stable down to 15 K, while accumulation charge decreased and depletion width increasedin forward bias. The low barrier height of 0.08 eV and absence of recombination-induced emissionindicated majority carrier field emission as the dominant conduction mechanism.