Room-temperature emission at telecom wavelengths from silicon photonic crystal nanocavities

Strongly enhanced light emission at wavelengths between 1.3 and 1.6 μm is reported at room temperature in silicon photonic crystal (PhC) nanocavities with optimized out-coupling efficiency. Sharp peaks corresponding to the resonant modes of PhC nanocavities dominate the broad sub-bandgap emission from optically active defects in the crystalline Si membrane. We measure a 300-fold enhancement of the emission from the PhC nanocavity due to a combination of far-field enhancement and the Purcell effect. The cavity enhanced emission has a very weak temperature dependence, namely less than a factor of 2 reduction between 10 K and room temperature, which makes this approach suitable for the realization of efficient light sources as well as providing a quick and easy tool for the broadband optical characterization of silicon-on-insulator nanostructures. © 2011 American Institute of Physics.

Enhanced light emission in active silicon-on-insulator photonic crystal slabs and slot waveguides

We present experimental measurements on Silicon-on-insulator (SOI) photonic crystal slabs with an active layer containing Er3+ ions-doped Silicon nanoclusters (Si-nc), showing strong enhancement of 1.54 μm emission at room temperature. We provide a systematic theoretical analysis to interpret such results. In order to get further insight, we discuss experimental data on the guided luminescence of unpatterned SOI planar slot waveguides, which show enhanced light emission in transverse-magnetic (TM) modes over transverse-electric (TE) ones. ©2007 IEEE.

Programmable ZnO nanowire transistors using switchable polarization of ferroelectric liquid crystal

We demonstrate modulations of electrical conductance and hysteresis behavior in ZnO nanowire transistors via electrically polarized switching of ferroelectric liquid crystal (FLC). After coating a nanowire channel in the transistors with FLCs, we observed large increases in channel conductance and hysteresis width, and a strong dependence of hysteresis loops on the polarization states associated with the orientation of electric dipole moments along the direction of the gate electric field. Furthermore, the reversible switching and retention characteristics provide the feasibility of creating a hybrid system with switch and memory functions. © 2013 American Institute of Physics.

Studying adsorbent dynamics on a quartz crystal resonator using its nonlinear electrical response

The quartz crystal resonator has been traditionally employed in studying surface-confined physisorbed films and particles by measuring dissipation and frequency shifts. However, theoretical interpretation of the experimental observations is often challenged due to limited understanding of physical interaction mechanisms at the interfaces involved. Here we model a physisorbed interaction between particles and gold electrode surface of a quartz crystal and demonstrate how the nonlinear modulation of the electric response of the crystal due to the nonlinear interaction forces may be used to study the dynamics of the particles. In particular, we show that the graphs of the deviation in the third Fourier harmonic response versus oscillation amplitude provide important information about the onset, progress and nature of sliding of the particles. The graphs also present a signature of the surface-particle interaction and could be used to estimate the interaction energy profile. Interestingly, the insights gained from the model help to explain some of the experimental observations with physisorbed streptavidin-coated polystyrene microbeads on quartz resonators. © 2012 Elsevier B.V. All rights reserved.

Magnetic properties and anisotropy of orthorhombic DyMnO3 single crystal

An orthorhombic DyMnO3 single crystal has been studied in magnetic fields up to 14 T and between 3 K and room temperature. The field dependent ordering temperature of Dy moments is deduced. The paramagnetic Curie Weiss behavior is related mainly to the Dy3+sublattice whereas the Mn sublattice contribution plays a secondary role. DC magnetization measurements show marked anisotropic features, related to the anisotropic structure of a cubic system stretched along a body diagonal, with a magnetic easy axis parallel to the crystallographic b axis. A temperature and field dependent spin flop transition is observed below 9 K, when relatively weak magnetocrystalline anisotropy is overcome by magnetic fields up to 1.6 T. © 2013 Elsevier B.V.

Free space communications with beam steering a two-electrode tapered laser diode using liquid-crystal slm

A free space optical wireless communication system with 3 degree angular coverage and 1.25 GHz modulation bandwidth is reported, in which relatively narrow laser beam of a simultaneous high power, high modulation speed and ultra high modulation efficiency directly modulated two-electrode tapered laser diode is steered using a nematic phase-only Liquid-Crystal On Silicon Spatial Light Modulator (LCOS SLM) by displaying reconfigurable 256 phase level gratings. © 1983-2012 IEEE.

Phase perfection in zinc Blende and Wurtzite III-V nanowires using basic growth parameters.

Controlling the crystallographic phase purity of III-V nanowires is notoriously difficult, yet this is essential for future nanowire devices. Reported methods for controlling nanowire phase require dopant addition, or a restricted choice of nanowire diameter, and only rarely yield a pure phase. Here we demonstrate that phase-perfect nanowires, of arbitrary diameter, can be achieved simply by tailoring basic growth parameters: temperature and V/III ratio. Phase purity is achieved without sacrificing important specifications of diameter and dopant levels. Pure zinc blende nanowires, free of twin defects, were achieved using a low growth temperature coupled with a high V/III ratio. Conversely, a high growth temperature coupled with a low V/III ratio produced pure wurtzite nanowires free of stacking faults. We present a comprehensive nucleation model to explain the formation of these markedly different crystal phases under these growth conditions. Critical to achieving phase purity are changes in surface energy of the nanowire side facets, which in turn are controlled by the basic growth parameters of temperature and V/III ratio. This ability to tune crystal structure between twin-free zinc blende and stacking-fault-free wurtzite not only will enhance the performance of nanowire devices but also opens new possibilities for engineering nanowire devices, without restrictions on nanowire diameters or doping.

Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires

The effects of growth temperature and V/III ratio on the morphology and crystallographic phases of InP nanowires that are grown by metal organic chemical vapour deposition have been studied. We show that higher growth temperatures or higher V/III ratios promote the formation of wurtzite nanowires while zinc-blende nanowires are favourableat lower growth temperatures and lower V/III ratios. A schematic map of distribution of zinc-blende and wurtzite structures has been developed in the range of growth temperatures (400-510 °C) and V/III ratios (44 to 700) investigated in this study. © 2010 IOP Publishing Ltd.

High purity GaAs nanowires free of planar defects: Growth and characterization

We investigate how to tailor the structural, crystallographic and optical properties of GaAs nanowires. Nanowires were grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. A high arsine flow rate, that is, a high ratio of group V to group III precursors, imparts significant advantages. It dramatically reduces planar crystallographic defects and reduces intrinsic carbon dopant incorporation. Increasing V/III ratio further, however, instigates nanowire kinking and increases nanowire tapering. By choosing an intermediate V/III ratio we achieve uniform, vertically aligned GaAs nanowires, free of planar crystallographic defects, with excellent optical properties and high purity. These findings will greatly assist the development of future GaAs nanowire-based electronic and optoelectronic devices, and are expected to be more broadly relevant to the rational synthesis of other III-V nanowires. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.

A nano-patterned photonic crystal laser with a dye-doped liquid crystal

Covering a nano-patterned titanium dioxide photonic crystal (PC) within a well-oriented film of dye-doped liquid crystal (LC), a distributed feedback laser is constructed whereby the emission characteristics can be manipulated in-situ using an electric field. This hybrid organic-inorganic structure permits simultaneous selectivity of both the beam pattern and laser wavelength by electrical addressing of the LC director. In addition, laser emission is obtained both in the plane and normal to the PC. Along with experimental data, a theoretical model is presented that is based upon an approximate calculation of the band structure of this birefringent, tuneable laser device. © 2013 AIP Publishing LLC.