Divergence-free vector-field and reduction

By the Lie symmetry group, the reduction for divergence-free vector-fields (DFVs) is studied, and the following results are found. A n-dimensional DFV can be locally reduced to a (n - 1)-dimensional DFV if it admits a one-parameter symmetry group that is spatial and divergenceless. More generally, a n-dimensional DFV admitting a r-parameter, spatial, divergenceless Abelian (commutable) symmetry group can be locally reduced to a (n - r)-dimensional DFV.

Semi-insulating layer for novel high voltage polysilicon thin film transistors

This work describes the deposition and characterisation of semi-insulating oxygen-doped silicon films for the development of high voltage polycrystalline silicon (poly-Si) circuitry on glass. The performance of a novel poly-Si High Voltage Thin Film Transistor (HVTFT) structure, incorporating a layer of semi-insulating material, has been investigated using a two dimensional device simulator. The semi-insulating layer increases the operating voltage of the HVTFT structure by linearising the potential distribution in the device offset region. A glass compatible semi-insulating layer, suitable for HVTFT applications, has been deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The as-deposited films are furnace annealed at 600°C which is the maximum process temperature. By varying the N2O/SiH4 ratio the conductivity of the annealed films can be accurately controlled up to a maximum of around 10-7 Ω-1cm-1. Helium dilution of the reactant gases improves both film uniformity and reproducibility. Raman analysis shows the as-deposited and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-Doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties.

Robust noise reduction for speech and audio signals

Statistical model-based methods are presented for the reconstruction of autocorrelated signals in impulsive plus continuous noise environments. Signals are modelled as autoregressive and noise sources as discrete and continuous mixtures of Gaussians, allowing for robustness in highly impulsive and non-Gaussian environments. Markov Chain Monte Carlo methods are used for reconstruction of the corrupted waveforms within a Bayesian probabilistic framework and results are presented for contaminated voice and audio signals.

Stress reduction and bond stability during thermal annealing of tetrahedral amorphous carbon

A comprehensive study of the stress release and structural changes caused by postdeposition thermal annealing of tetrahedral amorphous carbon (ta-C) on Si has been carried out. Complete stress relief occurs at 600-700°C and is accompanied by minimal structural modifications, as indicated by electron energy loss spectroscopy, Raman spectroscopy, and optical gap measurements. Further annealing in vacuum converts sp3 sites to sp2 with a drastic change occurring after 1100°C. The field emitting behavior is substantially retained up to the complete stress relief, confirming that ta-C is a robust emitting material. © 1999 American Institute of Physics.

Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (Δ VT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths. © 2010 American Institute of Physics.

An Electrowetting Model For Rough Surfaces Under Low Voltage

Electrowetting is one of the most effective methods to enhance wettability. A significant change of contact angle for the liquid droplet can result from the surface microstructures and the external electric field, without altering the chemical composition of the system. During the electrowetting process on a rough surface, the droplet exhibits a sharp transition from the Cassie-Baxter to the Wenzel regime at a low critical voltage. In this paper, a theoretical model for electrowetting is put forth to describe the dynamic electrical control of the wetting behavior at the low voltage, considering the surface topography. The theoretical results are found to be in good agreement with the existing experimental results. (c) Koninklijke Brill NV, Leiden, 2008.

Study of drag reduction by gas injection for power-law fluid flow in horizontal stratified and slug flow regimes

In this work, the drag reduction by gas injection for power-law fluid flow in stratified and slug flow regimes has been studied. Experimentswere conducted to measure the pressure gradient within air/CMC solutions in a horizontal Plexiglas pipe that had a diameter of 50mm and a length of 30 m. The drag reduction ratio in stratified flow regime was predicted using the two-fluid model. The results showed that the drag reduction should occur over the large range of the liquid holdup when the flow behaviour index remained at the low value. Furthermore, for turbulent gas-laminar liquid stratified flow, the drag reduction by gas injection for Newtonian fluid was more effective than that for shear-shinning fluid, when the dimensionless liquid height remained in the area of high value. The pressure gradient model for a gas/Newtonian liquid slug flow was extended to liquids possessing the Ostwald–de Waele power law model. The proposed model was validated against 340 experimental data point over a wide range of operating conditions, fluid characteristics and pipe diameters. The dimensionless pressure drop predicted was well inside the 20% deviation region for most of the experimental data. These results substantiated the general validity of the model presented for gas/non-Newtonian two-phase slug flows.