Charge order suppression, emergence of ferromagnetism and absence of exchange bias effect in Bi0.25Ca0.75MnO3 nanoparticles: Electron paramagnetic resonance and magnetization studies

We report the results of magnetization and electron paramagnetic resonance (EPR) studies on nanoparticles (average diameter similar to 30 nm) of Bi0.25Ca0.75MnO3 (BCMO) and compare them with the results on bulk BCMO. The nanoparticles were prepared using the nonaqueous sol-gel technique and characterized by XRD and TEM analysis. Magnetization measurements were carried out with a commercial physical property measurement system (PPMS). While the bulk BCMO exhibits a charge ordering transition at similar to 230 K and an antiferromagnetic (AFM) transition at similar to 130 K, in the nanoparticles, the CO phase is seen to have disappeared and a transition to a ferromagnetic (FM) state is observed at T-c similar to 120 K. However, interestingly, the exchange bias effect observed in other nanomanganite ferromagnets is absent in BCMO nanoparticles. EPR measurements were carried out in the X-band between 8 and 300 K. Lineshape fitting to a Lorentzian with two terms (accounting for both the clockwise and anticlockwise rotations of the microwave field) was employed to obtain the relevant EPR parameters as functions of temperature. The results confirm the occurrence of ferromagnetism in the nanoparticles of BCMO. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4730612]

Structure and mechanical properties of Ti-C films deposited using combination of pulsed DC and normal DC magnetron co-sputtering

Titanium-carbon (Ti-C) thin films of different compositions were prepared by a combination of pulsed DC (for Ti target) and normal DC (for graphite target) magnetron co-sputtering on oxidized silicon and fused quartz substrates. At 33.7 at.% of C content, pure hcp Ti transforms into fcc-TiC with a preferential orientation of (2 2 0) along with (1 1 1) and (2 0 0). A clear transformation in the preferential orientation from (2 2 0) to (1 1 1) has been observed when the C content was increased to 56 at.%. At 62.5 at.% of C, TiC precipitates in an amorphous carbon matrix whereas further increase in C leads to X-ray amorphous films. The cross-sectional scanning electron microscope images reveal that the films with low carbon content consists of columnar grains, whereas, randomly oriented grains are in an amorphous carbon matrix at higher carbon content. A dramatic variation was observed in the mechanical properties such as hardness, H, from 30 to 1 GPa and in modulus, E, from 255 to 25 GPa with varying carbon content in the films. Resistance to plastic deformation parameter was observed as 0.417 for films containing 62.5 at.% of C. Nanoscratch test reveals that the films are highly scratch resistant with a coefficient of friction ranging from 0.15 to 0.04. (C) 2012 Elsevier B.V. All rights reserved.

Influence of Sn doping on structural, optical and electrical properties of ZnO thin films prepared by cost effective sol-gel process

Tin (Sn) doped zinc oxide (ZnO) thin films were synthesized by sol-gel spin coating method using zinc acetate di-hydrate and tin chloride di-hydrate as the precursor materials. The films were deposited on glass and silicon substrates and annealed at different temperatures in air ambient. The agglomeration of grains was observed by the addition of Sn in ZnO film with an average grain size of 60 nm. The optical properties of the films were studied using UV-VIS-NIR spectrophotometer. The optical band gap energies were estimated at different concentrations of Sn. The MOS capacitors were fabricated using Sn doped ZnO films. The capacitance-voltage (C-V), dissipation vs. voltage (D-V) and current-voltage (I-V) characteristics were studied and the electrical resistivity and dielectric constant were estimated. The porosity and surface area of the films were increased with the doping of Sn which makes these films suitable for opto-electronic applications. (C) 2012 Elsevier B.V. All rights reserved.

Strain induced phase transition in CdSe nanowires: Effect of size and temperature

Using all-atom molecular dynamics simulation, we have studied the effect of size and temperature on the strain induced phase transition of wurtzite CdSe nanowires. The wurtzite structure transforms into a five-fold coordinated structure under uniaxial strain along the c axis. Our results show that lower temperature and smaller size of the nanowires stabilize the five-fold coordinated phase which is not a stable structure in bulk CdSe. High reversibility of this transformation with a very small heat loss will make these nanowires suitable for building efficient nanodevices. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4734990]

Carbon dioxide detection by boron nitride nanotubes

The effect of gas molecule adsorption is investigated on the density of states of (9,0) zigzag boron nitride nanotube within a random tight-binding Hamiltonian model. The Green function approach and coherent potential approximation have been implemented. The results show that the adsorption of carbon dioxide gas molecules by boron atoms only leads to a donor type semiconductor while the adsorption by nitrogen atoms only leads to an acceptor. Since the gas molecules are adsorbed by both boron and nitrogen atoms, a reduction of the band gap is found. In all cases, increasing the gas concentration causes an increase in the height of the peaks in the band gap. This is due to an increasing charge carrier concentration induced by adsorbed gas molecules.

Dual functional performance of fiber Bragg gratings coated with metals using flash evaporation technique

Metallic and other type of coatings on fiber Bragg grating (FBG) sensors alter their sensitivity with thermal and mechanical stress while protecting the fragile optical fiber in harsh sensing surroundings. The behavior of the coated materials is unique in their response to thermal and mechanical stress depending on the thickness and the mode of coating. The thermal stress during the coating affects the temperature sensitivity of FBG sensors. We have explored the thermal response of FBGs coated with Al and Pb to an average thickness of 80 nm using flash evaporation technique where the FBG sensor is mounted in a region at room temperature in an evacuated chamber having a pressure of 10(6) Torr which will minimize any thermal stress during the coating process. The coating thickness is chosen in the nanometer region with the aim to study thermal behavior of nanocoatings and their effect on FBG sensitivity. The sensitivity of FBGs is evaluated from the wavelengths recorded using an optical sensing interrogator sm 130 (Micron Optics) from room temperature to 300 degrees C both during heating and cooling. It is observed that the sensitivity of the metal coated fibers is better than the reference FBG with no coating for the entire range of temperature. For a coating thickness of 80 nm, Al coated FBG is more sensitive than the one coated with Pb up to 170 degrees C and it reverses at higher temperatures. This point is identified as a reversible phase transition in Pb monolayers as the 2-dimensional aspects of the metal layers are dominant in the nanocoatings of Pb. On cooling, the phase transition reverses and the FBGs return to the original state and for repeated cycles of heating and cooling the same pattern is observed. Thus the FBG functions as a sensor of the phase transitions of the coatings also. (C) 2012 Elsevier Inc. All rights reserved.

Radiative and non-radiative effects of a substrate on localized plasmon resonance of particles

Experiments have shown strong effects of some substrates on the localized plasmons of metallic nano particles but they are inconclusive on the affecting parameters. Here, we have used discrete dipole approximation in conjunction with Sommerfeld integral relations to explain the effect of the substrates as a function of the parameters of incident radiation. The radiative coupling can both quench and enhance the resonance and its dependence on the angle and polarization of incident radiation with respect to the surface is shown. Non-radiative interaction with the substrate enhances the plasmon resonance of the particles and can shift the resonances from their free-space energies significantly. The non-radiative interaction of the substrate is sensitive to the shape of particles and polarization of incident radiation with respect to substrate. Our results show that the plasmon resonances in coupled and single particles can be significantly altered from their free-space resonances and are quenched or enhanced by the choice of substrate and polarization of incident radiation. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4736544]

Thermal diffusivity measurements on ternary Ge-Te-Tl glasses using Photo-thermal Deflection method: Effect of thallium addition

Photo-thermal Deflection (PTD) technique is used to investigate the thermal diffusivity (alpha) of Ge17Te83 - xTlx (0 <= x <= 13) glasses as a function of composition. The thermal diffusivity of these glasses is found to lie in the range 0.020 to 0.048 cm(2)/s, which is consistent with the memory type of electrical switching exhibited by these samples. Further, it is found that alpha shows an initial increase with Tl addition, followed by a decrease. The observed composition dependence of thermal diffusivity has been understood on the basis that the thallium atoms are incorporated as a covalent species for lower values of x, increasing the network rigidity; however, they enter as ionic species for higher x values, fragmenting the network. The initial increase in a is due to the increasing network rigidity and the subsequent decrease is because of the fragmentation of the network. Also, there is a strong correlation between the composition dependence of switching voltages observed earlier and the variation with composition of electrical resistivity and thermal diffusivity of Ge17Te83 - xTlx glasses obtained in the present study. (C) 2012 Elsevier B.V. All rights reserved.

Structural Characterization and Ultraviolet Photoresponse of GaN Nanodots Grown by Molecular Beam Epitaxy

The present work explores the electrical transport and UV photoresponse properties of GaN nanodots (NDs) grown by molecular beam epitaxy (MBE). Single-crystalline wurtzite structure of GaN NDs is verified by X-ray diffraction and transmission electron microscopy (TEM). The interdigitated electrode pattern was created and current-voltage (I-V) characteristics of GaN NDs were studied in a metal-semiconductor-metal configuration. Dark I-V characteristics of lateral grown GaN NDs obeyed the Frenkel-Poole emission model, and the UV response of the device was stable and reproducible with on/off. The responsivity of the detectors is found to be 330 A/W with an external quantum efficiency of 1100%. (C) 2012 The Japan Society of Applied Physics

Vapor-liquid-solid growth of Si nanowires: A kinetic analysis

A steady state kinetic model has been developed for the vapor-liquid-solid growth of Si whiskers or nanowires from liquid catalyst droplets. The steady state is defined as one in which the net injection rate of Si into the droplet is equal to the ejection rate due to wire growth. Expressions that represent specific mechanisms of injection and ejection of Si atoms from the liquid catalyst droplet have been used and their relative importance has been discussed. The analysis shows that evaporation and reverse reaction rates need to be invoked, apart from just surface cracking of the precursor, in order to make the growth rate radius dependent. When these pathways can be neglected, the growth rate become radius independent and can be used to determine the activation energies for the rate limiting step of heterogeneous precursor decomposition. The ejection rates depend on the mechanism of wire growth at the liquid-solid interface or the liquid-solid-vapor triple phase boundary. It is shown that when wire growth is by nucleation and motion of ledges, a radius dependence of growth rate does not just come from the Gibbs-Thompson effect on supersaturation in the liquid, but also from the dependence of the actual area or length available for nucleation. Growth rates have been calculated using the framework of equations developed and compared with experimental results. The agreement in trends is found to be excellent. The same framework of equations has also been used to account for the diverse pressure and temperature dependence of growth rates reported in the literature. © 2012 American Institute of Physics.

Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor

We report on the threshold voltage modeling of ultra-thin (1 nm-5 nm) silicon body double-gate (DG) MOSFETs using self-consistent Poisson-Schrodinger solver (SCHRED). We define the threshold voltage (V th) of symmetric DG MOSFETs as the gate voltage at which the center potential (Φ c) saturates to Φ c (s a t), and analyze the effects of oxide thickness (t ox) and substrate doping (N A) variations on V th. The validity of this definition is demonstrated by comparing the results with the charge transition (from weak to strong inversion) based model using SCHRED simulations. In addition, it is also shown that the proposed V t h definition, electrically corresponds to a condition where the inversion layer capacitance (C i n v) is equal to the oxide capacitance (C o x) across a wide-range of substrate doping densities. A capacitance based analytical model based on the criteria C i n v C o x is proposed to compute Φ c (s a t), while accounting for band-gap widening. This is validated through comparisons with the Poisson-Schrodinger solution. Further, we show that at the threshold voltage condition, the electron distribution (n(x)) along the depth (x) of the silicon film makes a transition from a strong single peak at the center of the silicon film to the onset of a symmetric double-peak away from the center of the silicon film. © 2012 American Institute of Physics.

Current transport in nonpolar a-plane InN/GaN eterostructures Schottky junction

The temperature dependent current transport properties of nonpolar a-plane (11 2 0) InN/GaN heterostructure Schottky junction were investigated. The barrier height ( b) and ideally factor (η) estimated from the thermionic emission (TE) model were found to be temperature dependent in nature. The conventional Richardson plot of the ln(I s/T 2) versus 1/kT has two regions: the first region (150-300 K) and the second region (350-500 K). The values of Richardson constant (A +) obtained from this plot are found to be lower than the theoretical value of n-type GaN. The variation in the barrier heights was explained by a double Gaussian distribution with mean barrier height values ( b ) of 1.17 and 0.69 eV with standard deviation (� s) of 0.17 and 0.098 V, respectively. The modified Richardson plot in the temperature range 350-500 K gives the Richardson constant which is close to the theoretical value of n-type GaN. Hence, the current mechanism is explained by TE by assuming the Gaussian distribution of barrier height. At low temperature 150-300 K, the absence of temperature dependent tunneling parameters indicates the tunneling assisted current transport mechanism. © 2012 American Institute of Physics.

Bismuth catalyzed growth of silicon nanowires by electron beam evaporation

Silicon nanowires (NWs) have been grown in the vapor phase for the first time with bismuth (Bi) as a catalyst using the electron beam evaporation method at a low substrate temperature of 280 degrees C. The grown Si nanowires were randomly oriented on the substrate with an average length of 900 nm for a deposition time of 15 min. Bi faceted nanoparticles (crowned) at the end of the grown Si nanowires have been observed and attributed to the Vapor-Liquid-Solid (VLS) growth mechanism. Transmission Electron Microscopy analysis on the nanowires revealed their single crystalline nature and interestingly bismuth particles were observed in Si nanowires. The obtained results have shown a new window for Si nanowires growth with bismuth as a catalyst. (C) 2012 Elsevier B.V. All rights reserved.

Substrate temperature influenced physical properties of silicon MOS devices with TiO2 gate dielectric

DC reactive magnetron sputtering technique was employed for deposition of titanium dioxide (TiO2) films. The films were formed on Corning glass and p-Si (100) substrates by sputtering of titanium target in an oxygen partial pressure of 6x10-2 Pa and at different substrate temperatures in the range 303 673 K. The films formed at 303 K were X-ray amorphous whereas those deposited at substrate temperatures?=?473 K were transformed into polycrystalline nature with anatase phase of TiO2. Fourier transform infrared spectroscopic studies confirmed the presence of characteristic bonding configuration of TiO2. The surface morphology of the films was significantly influenced by the substrate temperature. MOS capacitor with Al/TiO2/p-Si sandwich structure was fabricated and performed currentvoltage and capacitancevoltage characteristics. At an applied gate voltage of 1.5 V, the leakage current density of the device decreased from 1.8?x?10-6 to 5.4?x?10-8 A/cm2 with the increase of substrate temperature from 303 to 673 K. The electrical conduction in the MOS structure was more predominant with Schottky emission and Fowler-Nordheim conduction. The dielectric constant (at 1 MHz) of the films increased from 6 to 20 with increase of substrate temperature. The optical band gap of the films increased from 3.50 to 3.56 eV and refractive index from 2.20 to 2.37 with the increase of substrate temperature from 303 to 673 K. Copyright (c) 2012 John Wiley & Sons, Ltd.

Detection of sugar-lectin interactions by multivalent dendritic sugar functionalized single-walled carbon nanotubes

We show that single walled carbon nanotubes (SWNTs) decorated with sugar functionalized poly (propyl ether imine) (PETIM) dendrimer is a very sensitive platform to quantitatively detect carbohydrate recognizing proteins, namely, lectins. The changes in electrical conductivity of SWNT in field effect transistor device due to carbohydrate-protein interactions form the basis of present study. The mannose sugar attached PETIM dendrimers undergo charge-transfer interactions with the SWNTs. The changes in the conductance of the dendritic sugar functionalized SWNT after addition of lectins in varying concentrations were found to follow the Langmuir type isotherm, giving the concanavalin A (Con A)-mannose affinity constant to be 8.5 x 10(6) M-1. The increase in the device conductance observed after adding 10 nM of Con A is same as after adding 20 mu M of a non-specific lectin peanut agglutinin, showing the high specificity of the Con A-mannose interactions. The specificity of sugar-lectin interactions was characterized further by observing significant shifts in Raman modes of the SWNTs. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4739793]