Run-up of solitary waves on twin conical islands using a boussinesq model

This paper investigates the interaction of solitary waves (representative of tsunamis) with idealized flat-topped conical islands. The investigation is based on simulations produced by a numerical model that solves the two-dimensional Boussinesq-type equations of Madsen and Sørensen using a total variation diminishing Lax-Wendroff scheme. After verification against published laboratory data on solitary wave run-up at a single island, the numerical model is applied to study the maximum run-up at a pair of identical conical islands located at different spacings apart for various angles of wave attack. The predicted results indicate that the maximum run-up can be attenuated or enhanced according to the position of the second island because of wave refraction, diffraction, and reflection. It is also observed that the local wave height and hence run-up can be amplified at certain gap spacing between the islands, owing to the interference between the incident waves and the reflected waves between islands. © 2012 American Society of Mechanical Engineers.

Mapping forces in a 3D elastic assembly of grains

Our understanding of the elasticity and rheology of disordered materials, such as granular piles, foams, emulsions or dense suspensions relies on improving experimental tools to characterise their behaviour at the particle scale. While 2D observations are now routinely carried out in laboratories, 3D measurements remain a challenge. In this paper, we use a simple model system, a packing of soft elastic spheres, to illustrate the capability of X-ray microtomography to characterise the internal structure and local behaviour of granular systems. Image analysis techniques can resolve grain positions, shapes and contact areas; this is used to investigate the materials microstructure and its evolution upon strain. In addition to morphological measurements, we develop a technique to quantify contact forces and estimate the internal stress tensor. As will be illustrated in this paper, this opens the door to a broad array of static and dynamical measurements in 3D disordered systems. © 2011 Elsevier Ltd. All rights reserved.

ZnO-Based FBAR resonators with carbon nanotube electrodes

Film bulk acoustic resonator (FBAR) devices with carbon nanotube (CNT) electrodes directly grown on a ZnO film by thermal chemical vapor deposition have been fabricated. CNT electrodes possess a very low density and high acoustic impedance, which reduces the intrinsic mass loading effect resulting from the electrodes' weight and better confines the longitudinal acoustic standing waves inside the resonator, in turn providing a resonator with a higher quality factor. The influence of the CNTs on the frequency response of the FBAR devices was studied by comparing two identical sets of devices; one set comprised FBARs fabricated with chromium/ gold bilayer electrodes, and the second set comprised FBARs fabricated with CNT electrodes. It was found that the CNTs had a significant effect on attenuating traveling waves at the surface of the FBARs' membranes because of their high elastic stiffness. Three-dimensional finite element analysis of the devices fabricated was carried out, and the numerical simulations were consistent with the experimental results obtained. © 2011 IEEE.

On the diffraction of acoustic waves by a quarter-plane

This paper follows the work of A.V. Shanin on diffraction by an ideal quarter-plane. Shanin's theory, based on embedding formulae, the acoustic uniqueness theorem and spherical edge Green's functions, leads to three modified Smyshlyaev formulae, which partially solve the far-field problem of scattering of an incident plane wave by a quarter-plane in the Dirichlet case. In this paper, we present similar formulae in the Neumann case, and describe a numerical method allowing a fast computation of the diffraction coefficient using Shanin's third modified Smyshlyaev formula. The method requires knowledge of the eigenvalues of the Laplace-Beltrami operator on the unit sphere with a cut, and we also describe a way of computing these eigenvalues. Numerical results are given for different directions of incident plane wave in the Dirichlet and the Neumann cases, emphasising the superiority of the third modified Smyshlyaev formula over the other two. © 2011 Elsevier B.V.

Guided propagation of surface acoustic waves and piezoelectric field enhancement in ZnO/GaAs systems

The characteristics and dispersion of the distinct surface acoustic waves (SAWs) propagating in ZnO/GaAs heterostructures have been studied experimentally and theoretically. Besides the Rayleigh mode, strong Sezawa modes, which propagate confined in the overlayer, arise due to the smaller sound velocity in ZnO than in the substrate. The design parameters of the structure providing the strongest piezoelectric field at a given depth within the layered system for the different modes have been determined. The piezoelectric field of the Rayleigh mode is shown to be more than 10 times stronger at the interface region of the tailored ZnO/GaAs structure than at the surface region of the bulk GaAs, whereas the same comparison for the first Sezawa mode yields a factor of 2. This enhancement, together with the capacity of selecting waves with different piezoelectric and strain field depth profiles, will facilitate the development of SAW-modulated optoelectronic applications in GaAs-based systems. © 2011 American Institute of Physics.

TRANSIENT SCANNING ELECTRON BEAM ANNEALING METHODS USED TO STUDY DIFFUSION AND DEFECTS IN IMPLANTED SILICON.

Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drain regions in CMOS, has been carried out using a scanning electron beam annealer, as part of a study of transient diffusion effects. Three types of e-beam anneal have been performed, with peak temperatures in the range 900 -1200 degree C; the normal isothermal e-beam anneals, together with sub-second fast anneals and 'dual-pulse' anneals, in which the sample undergoes an isothermal pre-anneal followed by rapid heating to the required anneal temperature is less than 0. 5s. The diffusion occuring during these anneal cycles has been modelled using SPS-1D, an implant and diffusion modelling program developed by one of the authors. This has been modified to incorporate simulated temperature vs. time cycles for the anneals. Results are presented applying the usual equilibrium clustering model, a transient point-defect enhancement to the diffusivity proposed recently by Fair and a new dynamic clustering model for arsenic. Good agreement with SIMS measurements is obtained using the dynamic clustering model, without recourse to a transient defect model.

Transient electrothermal simulation of power semiconductor devices

In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink. Compared with the traditional finite-difference thermal model and equivalent RC thermal network, the new thermal model can provide high simulation speed with high accuracy, which has been proved to be more favorable in dynamic thermal characterization on power semiconductor switches. The complete electrothermal simulation models of insulated gate bipolar transistor (IGBT) and power diodes under inductive load switching condition have been successfully implemented in MATLAB/Simulink. The experimental results on IGBT and power diodes with clamped inductive load switching tests have verified the new electrothermal simulation model. The advantage of Fourier series thermal model over widely used equivalent RC thermal network in dynamic thermal characterization has also been validated by the measured junction temperature.© 2010 IEEE.