1000 resultados para Technique spectroscopique


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Reduction of radar cross -section of dihedral corner reflectors using simulated corrugated surface (.SCS) is reported. This technique is found lo be more effective in the reduction of RCS or corner reflectors for normal incidence . A typical reduction of 40-50 dB is achieved using this method

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The mathematical formulation of empirically developed formulas Jirr the calculation of the resonant frequency of a thick-substrate (h s 0.08151 A,,) microstrip antenna has been analyzed. With the use qt' tunnel-based artificial neural networks (ANNs), the resonant frequency of antennas with h satisfying the thick-substrate condition are calculated and compared with the existing experimental results and also with the simulation results obtained with the use of an IE3D software package. The artificial neural network results are in very good agreement with the experimental results

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Reduction of radar cross -section of dihedral corner reflectors using simulated corrugated surface (SCS) is reported. The technique is found to be more effective in the reduction of RCS or corner reflectors for normal incidence . A typical reduction of 40-50 dB is achieved using this method.

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Dual beam mode-matched thermal lens method has been employed to measure the heat diffusion in nanofluid of silver with various volumes of rhodamine 6G, both dispersed in water. The important observation is an indication of temperature dependent diffusivity and that the overall heat diffusion is slower in the chemically prepared Ag sol compared to that of water. The experimental results can be explained assuming that Brownian motion is the main mechanism of heat transfer under the present experimental conditions. Light induced aggregation of the nanoparticles can also result in an anomalous diffusion behavior.

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Thermal diffusivity (TD) measurement on commercial K-10 and KSF montmorillonites was carried out by photoacoustic technique. The TD of the montmorillonites after methylene blue adsorption changed with the dye concentration. The repeatedly adsorbed samples showed a lesser TD than the single adsorbed samples. After methylene blue adsorption the acid leached K-10 samples showed well defined changes in TD when compared to the ordered KSF samples.

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An open photoacoustic cell operating in the low range of chopping frequency has been employed to evaluate the thermal diffusivity values of intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is calibrated by the evaluation of thermal diffusivity value of pure Si and GaAs. The present investigation shows that doped samples show a reduced value for thermal diffusivity compared to intrinsic sample. From the analysis of data it is also seen that nature of dopant clearly influences the thermal diffusivity value of semiconductors. The results are explained in terms of phonon assisted heat transfer mechanism in semiconductors

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An open photoacoustic cell operating in the low range of chopping frequency has been employed to evaluate the thermal diffusivity values of intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is calibrated by the evaluation of thermal diffusivity value of pure Si and GaAs. The present investigation shows that doped samples show a reduced value for thermal diffusivity compared to intrinsic sample. From the analysis of data it is also seen that nature of dopant clearly influences the thermal diffusivity value of semiconductors. The results are explained in terms of phonon assisted heat transfer mechanism in semiconductors

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An open photoacoustic cell operating in the low range of chopping frequency has been employed to evaluate the thermal diffusivity values of intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is calibrated by the evaluation of thermal diffusivity value of pure Si and GaAs. The present investigation shows that doped samples show a reduced value for thermal diffusivity compared to intrinsic sample. From the analysis of data it is also seen that nature of dopant clearly influences the thermal diffusivity value of semiconductors. The results are explained in terms of phonon assisted heat transfer mechanism in semiconductors