989 resultados para TeO2-ZnO-Na2O-K2O glasses


Relevância:

20.00% 20.00%

Publicador:

Resumo:

Surface acoustic wave (SAW) devices with 64 μm wavelength were fabricated on a zinc oxide (ZnO) film deposited on top of an ultra-smooth nanocrystalline diamond (UNCD) layer. The smooth surface of the UNCD film allowed the growth of the ZnO film with excellent c-axis orientation and low surface roughness, suitable for SAW fabrication, and could restrain the wave from significantly dissipating into the substrate. The frequency response of the fabricated devices was characterized and a Rayleigh mode was observed at ∼65.4 MHz. This mode was utilised to demonstrate that the ZnO/UNCD SAW device can be successfully used for microfluidic applications. Streaming, pumping, and jetting using microdroplets of 0.5 and 20 μl were achieved and characterized under different powers applied to the SAW device, focusing more on the jetting behaviors induced by the ZnO SAW.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

The probe tip is pivotal in determining the resolution and nature of features observed in the Scanning Tunnelling Microscope (STM). We have augmented a conventional Pt/Ir metallic tip with a hydrothermally grown ZnO nanowire (NW). Atomic resolution imaging of graphite is attained. Current-voltage (IV) characteristics demonstrate an asymmetry stemming from the unintentional n-type doping of the ZnO NW, whereas the expected Schottky barrier at the ZnO-Pt/Ir interface is shown to have negligible effect. Moreover the photoconductivity of the system is investigated, paving the way towards a photodetector capable of atomic resolution.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

We investigated the UV photoconductivity characteristics of ZnO nanowire field effect transistors (FETs) irradiated by proton beams. After proton beam irradiation (using a beam energy of 10 MeV and a fluence of 10 12 cm -2), the drain current and carrier density in the ZnO nanowire FETs decreased, and the threshold voltage shifted to the positive gate bias direction due to the creation of interface traps at the SiO 2/ZnO nanowire interface by the proton beam. The interface traps produced a higher surface barrier potential and a larger depletion region at the ZnO nanowire surface, affecting the photoconductivity and its decay time. The UV photoconductivity of the proton-irradiated ZnO nanowire FETs was higher and more prolonged than that of the pristine ZnO nanowire FETs. The results extend our understanding of the UV photoconductivity characteristics of ZnO nanowire devices and other materials when irradiated with highly energetic particles. © 2012 Elsevier B.V. All rights reserved.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

ZnO thin film bulk acoustic resonators (FBARs) with resonant frequency of ∼1.5 GHz have been fabricated to function as an odorant biosensor. Physical adsorption of an odorant binding protein (AaegOBP22 from Aedes aegypti) resulted in frequency down shift. N,N-diethyl-meta-toluamide (DEET) has been selected as a ligand to the odorant binding protein (OBP). Alternate exposure of the bare FBARs to nitrogen flow with and without DEET vapor did not cause any noticeable frequency change. However, frequency drop was detected when exposing the OBP loaded FBAR sensors to the nitrogen flow containing DEET vapor against nitrogen flow alone (control) and the extent of frequency shift was proportional to the amount of the protein immobilized on the FBAR surface, indicating a linear response to DEET binding. These findings demonstrate the potential of binding protein functionalized FBARs as odorant biosensors. © 2012 Elsevier B.V. All rights reserved.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

Acoustic wave devices were fabricated incorporating ZnO films deposited using both a standard rf magnetronand a novel High Target Utilisation (HiTUS) Sputtering System. Our results demonstrated the feasibility of using a single SAW-based actuation mechanism for both microfluidics and sensing. To further improve the sensitivity of our bio-sensors we have also investigated the use of Thin Film Bulk Acoustic Resonators.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

In this letter we report a facile one-pot synthesis of intercalated ZnO particles for inexpensive, low-temperature solution processed dye-sensitised solar cells. High interconnectivity facilitates enhanced charge transfer between the ZnO nanoparticles and a consequent enhancement in cell efficiency. ZnO thin films were formed from a wide range of nanoparticle diameters which simultaneously increased optical scattering whilst enhancing dye loading. A possible growth mechanism was proposed for the synthesis of ZnO nanoparticles. The intercalated ZnO nanoparticle thin films were integrated into the photoanodes of dye-sensitised solar cells which showed an increase in performance of 37% compared to structurally equivalent cells employing ZnO nanowires. © 2012 Elsevier B.V.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

Low attenuation of Sezawa modes operating at GHz frequencies in ZnO/GaAs systems immersed in liquid helium has been observed. This unexpected behaviour for Rayleigh-like surface acoustic waves (SAWs) is explained in terms of the calculated depth profiles of their acoustic Poynting vectors. This analysis allows reproduction of the experimental dispersion of the attenuation coefficient. In addition, the high attenuation of the Rayleigh mode is compensated by the strengthening provided by the ZnO layer. The introduction of the ZnO film will enable the operation of SAW-driven single-photon sources in GaAs-based systems with the best thermal stability provided by the liquid helium bath. © 2013 American Institute of Physics.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

We demonstrate modulations of electrical conductance and hysteresis behavior in ZnO nanowire transistors via electrically polarized switching of ferroelectric liquid crystal (FLC). After coating a nanowire channel in the transistors with FLCs, we observed large increases in channel conductance and hysteresis width, and a strong dependence of hysteresis loops on the polarization states associated with the orientation of electric dipole moments along the direction of the gate electric field. Furthermore, the reversible switching and retention characteristics provide the feasibility of creating a hybrid system with switch and memory functions. © 2013 American Institute of Physics.

Relevância:

20.00% 20.00%

Publicador: