998 resultados para THERMOPLASTIC PROCESS


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Crack propagation and strain field evolution in two metallic glassy ribbons are studied using in situ scanning electron microscopy and the white digital speckle correlation method. Strain state at the crack tip, which depends heavily on the fracture toughness, plays a key role in fracture. A high degree of shear strain concentration in tough glassy ribbon can satisfy the critical shear strain, resulting in shear fracture, whereas a high degree of linear strain concentration in brittle glassy ribbon can initiate normal tensile fracture. (C) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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We study the macroscopic drying patterns of aqueous suspensions of colloidal silica spheres. It was found that convection strength can influence pattern formation. Uniformed films are obtained at weaker convection strength. In addition, we make clear that it is not reasonable to discuss individually the effect of temperature and humidity on the colloid self-assembly. The physical mechanism is that these factors have relationship with the evaporation rate, which can affect the convection strength.

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Fracture owing to the coalescence of numerous microcracks can be described by a simple statistical model, where a coalescence event stochastically occurs as the number density of nucleated microcracks increases. Both numerical simulation and statistical analysis reveal that a microcrack coalescence process may display avalanche behavior and that the final failure is catastrophic. The cumulative distribution of coalescence events in the vicinity of critical fracture follows a power law and the fracture profile has self-affine fractal characteristic. Some macromechanical quantities may be traced back and extracted from the mesoscopic process based on the statistical analysis of coalescence events.

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The localized shear deformation in the 2024 and 2124 Al matrix composites reinforced with SiC particles was investigated with a split Hopkinson pressure bar (SHPB) at a strain rate of about 2.0x10(3) s(-1). The results showed that the occurrence of localized shear deformation is sensitive to the size of SiC particles. It was found that the critical strain, at which the shear localization occurs, strongly depends on the size and volume fraction of SiC particles. The smaller the particle size, the lower the critical strain required for the shear localization. TEM examinations revealed that Al/SiCp interfaces are the main sources of dislocations. The dislocation density near the interface was found to be high and it decreases with the distance from the particles. The Al matrix in shear bands was highly deformed and severely elongated at low angle boundaries. The Al/SiCp interfaces, particularly the sharp corners of SiC particles, provide the sites for microcrack initiation. Eventual fracture is caused by the growth and coalescence of microcracks along the shear bands. It is proposed that the distortion free equiaxed grains with low dislocation density observed in the center of shear band result from recrystallization during dynamic deformation.

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The melt flow and temperature distribution in a 200 mm silicon Czochralski furnace with a cusp magnetic field was modeled and simulated by using a finite-volume based FLUTRAPP ( Fluid Flow and Transport Phenomena Program) code. The melt flow in the crucible was focused, which is a result of the competition of buoyancy, the centrifugal forces caused by the rotations of the crucible and crystal, the thermocapillary force on the free surfaces and the Lorentz force induced by the cusp magnetic field. The zonal method for radiative heat transfer was used in the growth chamber, which was confined by the crystal surface, melt surface, crucible, heat shield, and pull chamber. It was found that the cusp magnetic field could strength the dominant counter-rotating swirling flow cell in the crucible and reduce the flow oscillation and the pulling-rate fluctuation. The fluctuation of dopant and oxygen concentration in the growing crystal could thus be smoothed.