980 resultados para Password-based authentication
Resumo:
Science of the total environment 405(2008) 278-285
Resumo:
In this brief, a read-only-memoryless structure for binary-to-residue number system (RNS) conversion modulo {2(n) +/- k} is proposed. This structure is based only on adders and constant multipliers. This brief is motivated by the existing {2(n) +/- k} binary-to-RNS converters, which are particular inefficient for larger values of n. The experimental results obtained for 4n and 8n bits of dynamic range suggest that the proposed conversion structures are able to significantly improve the forward conversion efficiency, with an AT metric improvement above 100%, regarding the related state of the art. Delay improvements of 2.17 times with only 5% area increase can be achieved if a proper selection of the {2(n) +/- k} moduli is performed.
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In this paper we exploit the nonlinear property of the SiC multilayer devices to design an optical processor for error detection that enables reliable delivery of spectral data of four-wave mixing over unreliable communication channels. The SiC optical processor is realized by using double pin/pin a-SiC:H photodetector with front and back biased optical gating elements. Visible pulsed signals are transmitted together at different bit sequences. The combined optical signal is analyzed. Data show that the background acts as selector that picks one or more states by splitting portions of the input multi optical signals across the front and back photodiodes. Boolean operations such as EXOR and three bit addition are demonstrated optically, showing that when one or all of the inputs are present, the system will behave as an XOR gate representing the SUM. When two or three inputs are on, the system acts as AND gate indicating the present of the CARRY bit. Additional parity logic operations are performed using four incoming pulsed communication channels that are transmitted and checked for errors together. As a simple example of this approach, we describe an all-optical processor for error detection and then provide an experimental demonstration of this idea. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Resumo:
The SiC optical processor for error detection and correction is realized by using double pin/pin a-SiC:H photodetector with front and back biased optical gating elements. Data shows that the background act as selector that pick one or more states by splitting portions of the input multi optical signals across the front and back photodiodes. Boolean operations such as exclusive OR (EXOR) and three bit addition are demonstrated optically with a combination of such switching devices, showing that when one or all of the inputs are present the output will be amplified, the system will behave as an XOR gate representing the SUM. When two or three inputs are on, the system acts as AND gate indicating the present of the CARRY bit. Additional parity logic operations are performed by use of the four incoming pulsed communication channels that are transmitted and checked for errors together. As a simple example of this approach, we describe an all optical processor for error detection and correction and then, provide an experimental demonstration of this fault tolerant reversible system, in emerging nanotechnology.
Resumo:
Conventional film based X-ray imaging systems are being replaced by their digital equivalents. Different approaches are being followed by considering direct or indirect conversion, with the later technique dominating. The typical, indirect conversion, X-ray panel detector uses a phosphor for X-ray conversion coupled to a large area array of amorphous silicon based optical sensors and a couple of switching thin film transistors (TFT). The pixel information can then be readout by switching the correspondent line and column transistors, routing the signal to an external amplifier. In this work we follow an alternative approach, where the electrical switching performed by the TFT is replaced by optical scanning using a low power laser beam and a sensing/switching PINPIN structure, thus resulting in a simpler device. The optically active device is a PINPIN array, sharing both front and back electrical contacts, deposited over a glass substrate. During X-ray exposure, each sensing side photodiode collects photons generated by the scintillator screen (560 nm), charging its internal capacitance. Subsequently a laser beam (445 nm) scans the switching diodes (back side) retrieving the stored charge in a sequential way, reconstructing the image. In this paper we present recent work on the optoelectronic characterization of the PINPIN structure to be incorporated in the X-ray image sensor. The results from the optoelectronic characterization of the device and the dependence on scanning beam parameters are presented and discussed. Preliminary results of line scans are also presented. (C) 2014 Elsevier B.V. All rights reserved.