Heteroepitaxy of Group IV and Group III-V semiconductor alloys for photovoltaic applications

Photovoltaic energy conversion represents a economically viable technology for realizing collection of the largest energy resource known to the Earth -- the sun. Energy conversion efficiency is the most leveraging factor in the price of energy derived from this process. This thesis focuses on two routes for high efficiency, low cost devices: first, to use Group IV semiconductor alloy wire array bottom cells and epitaxially grown Group III-V compound semiconductor alloy top cells in a tandem configuration, and second, GaP growth on planar Si for heterojunction and tandem cell applications.

Metal catalyzed vapor-liquid-solid grown microwire arrays are an intriguing alternative for wafer-free Si and SiGe materials which can be removed as flexible membranes. Selected area Cu-catalyzed vapor-liquid solid growth of SiGe microwires is achieved using chlorosilane and chlorogermane precursors. The composition can be tuned up to 12% Ge with a simultaneous decrease in the growth rate from 7 to 1 μm/min^-1. Significant changes to the morphology were observed, including tapering and faceting on the sidewalls and along the lengths of the wires. Characterization of axial and radial cross sections with transmission electron microscopy revealed no evidence of defects at facet corners and edges, and the tapering is shown to be due to in-situ removal of catalyst material during growth. X-ray diffraction and transmission electron microscopy reveal a Ge-rich crystal at the tip of the wires, strongly suggesting that the Ge incorporation is limited by the crystallization rate.

Tandem Ga_1-xIn_xP/Si microwire array solar cells are a route towards a high efficiency, low cost, flexible, wafer-free solar technology. Realizing tandem Group III-V compound semiconductor/Si wire array devices requires optimization of materials growth and device performance. GaP and Ga_1-xIn_xP layers were grown heteroepitaxially with metalorganic chemical vapor deposition on Si microwire array substrates. The layer morphology and crystalline quality have been studied with scanning electron microscopy and transmission electron microscopy, and they provide a baseline for the growth and characterization of a full device stack. Ultimately, the complexity of the substrates and the prevalence of defects resulted in material without detectable photoluminescence, unsuitable for optoelectronic applications.

Coupled full-field optical and device physics simulations of a Ga_0.51In_0.49P/Si wire array tandem are used to predict device performance. A 500 nm thick, highly doped "buffer" layer between the bottom cell and tunnel junction is assumed to harbor a high density of lattice mismatch and heteroepitaxial defects. Under simulated AM1.5G illumination, the device structure explored in this work has a simulated efficiency of 23.84% with realistic top cell SRH lifetimes and surface recombination velocities. The relative insensitivity to surface recombination is likely due to optical generation further away from the free surfaces and interfaces of the device structure.

Finally, GaP has been grown free of antiphase domains on Si (112) oriented substrates using metalorganic chemical vapor deposition. Low temperature pulsed nucleation is followed by high temperature continuous growth, yielding smooth, specular thin films. Atomic force microscopy topography mapping showed very smooth surfaces (4-6 Å RMS roughness) with small depressions in the surface. Thin films (~ 50 nm) were pseudomorphic, as confirmed by high resolution x-ray diffraction reciprocal space mapping, and 200 nm thick films showed full relaxation. Transmission electron microscopy showed no evidence of antiphase domain formation, but there is a population of microtwin and stacking fault defects.

Systematic Studies on 3d- and 4f-Metal Containing Polyoxometalates Suitable for Organic Derivatization

232 p.

Experimental studies of weak superconductivity

Experimental investigations were made of the nature of weak superconductivity in a structure having well-defined, controllable characteristics and geometry. Controlled experiments were made possible by using a thin-film structure which was entirely metallic and consisted of a superconducting film with a localized section that was weak in the sense that its transition temperature was depressed relative to the rest of the film. The depression of transition temperature was brought about by underlaying the superconductor with a normal metal.

The DC and AC electrical characteristics of this structure were studied. It was found that this structure exhibited a non-zero, time-average supercurrent at finite voltage to at least .2 mV, and generated an oscillating electric potential at a frequency given by the Josephson relation. The DC V-I characteristic and the amplitude of the AC oscillation were found to be consistent with a two- fluid (normal current-supercurrent) model of weak super-conductivity based on e thermodynamically irreversible process of repetitive phase-slip, and featuring a periodic time dependence in the amplitude of the superconducting order parameter.

The observed linewidth of the AC oscillation could be accounted for by incorporating Johnson noise in the two-fluid model.

Experimentally it was found that the behavior of a short (length on the order of the coherence distance) weak superconductor could be characterized by its critical current and normal-state resistance, and an empirical expression was obtained for the time dependence of the super-current and voltage.

It was found that the results could not be explained on the basis of the theory of the Josephson junction.

7.3 W国产单频光纤放大器

报道了一种MOPA式国产单频光纤放大器。该放大器采用连续波单频激光器作为主振荡器，采用我国自行设计和制造的大模场面积掺Yb双包层光纤作为功率放大器，在波长1064 nm处实现了最高7.3 W的连续激光输出，斜率效率为39%，光－光转换效率为26%。此外，对光谱特性及放大的自发发射的抑制也进行了探讨。

Síntese e estudo das propriedades luminescentes do SrGa2O4 dopado com íons de Cr3+

Amostras policristalinas de Sr(Ga1-xCrx)2O4 com x = 0,01 foram estequiometricamente preparadas pela mistura dos materiais em pó SrCO3, Ga2O3 e Cr2O3. A estrutura cristalina da amostra dopada foi analisada pelas medidas de difração de raios-X. O padrão de difração revelou uma única fase relacionada a fase monoclínica do SrGa2O4. Os dados foram ajustados usando o Método de Rietveld para refinamento de estruturas e os parâmetros da rede foram determinados. A luminescência do íon de Cr3+ na rede do SrGa2O4 foi investigada pelas espectroscopias de excitação e emissão a temperatura ambiente, através das quais verificamos que os íons de Cr3+ estão localizados em dois sítios diferentes. Os espectros de emissão apresentam bandas largas associadas à transição eletrônica 4T2(4F) → 4A2(4F) para ambos os sítios. Estes resultados são analisados pela teoria de campo cristalino e o parâmetro de campo cristalino Dq e os parâmetros de Racah B e C são determinados pelas posições das bandas de excitação. A partir destes parâmetros determinamos um campo cristalino forte para ambos os sítios. Além disto, foram realizadas medidas de espectroscopia fotoacústica que confirmaram as transições identificadas e estimadas nos espectros de excitação.

A compact diode-pumped injection seeded Nd : YAG laser with resonance-detection technique

A diode pumped injection seeded single-longitudinal-mode (SLM) Nd:YAG laser is achieved by using the resonance-detection technique in Q-switching operation. The pulsed oscillator laser uses a folded cavity to achieve compact construction. This system operates at 100 Hz and provides over 20 mJ/pulse of single-frequency 1064 nm output. The M-2 values of horizontal and vertical axes are 1.58 and 1.41, respectively. The probability of putting out single-longitudinal-mode pulses is 100%. The 355 nm laser output produced by frequency tripling has a linewidth less than 200 MHz. The laser can run over eight hours continually without mode hopping.

激光二极管阵列的窄线宽、可调谐输出

外腔反馈的激光二极管阵列(LDA)可获得窄线宽、可调谐的光谱输出。外腔由快轴准直镜、准直光学系统和闪耀光栅组成。由于阵列中各发光单元的排列弯曲导致不同波长的光原路返回,引起谱线展宽,在输出光路中加入光谱滤波器,使激光二极管阵列的线宽进一步窄化。这样,激光二极管阵列的输出光谱由自由运转时的2 nm压缩到0.12 nm,在恒定温度23 ℃时,实现了激光在806～818 nm的调谐,调谐范围达12 nm。

Yb^3＋掺杂锌锗碲酸盐玻璃的热分析、光谱和激光性质

设计了组成为0．70TeO2-(0．20-x)ZnO-xGeO2—0．05La2O3-0．025K2O-0．025Na2O-0．01Yb2O3(摩尔分数x=0,0．05，0．10，0．15和0．20)的碲酸盐激光玻璃，测试了热学性质、吸收光谱、荧光光谱和荧光寿命。计算了Yb^3+离子的吸收截面、受激发射截面、荧光有效线宽等参数。结果表明，组成为0．70TeO2-0．20GeO2-0．05La2O3-0．025K2O-0．025Na2O的玻璃具有优于著名的碲锌钠(TZN)玻璃的热稳定性，高的受激发射截面(1

Yb：铅锌镧碲酸盐玻璃的热学、光谱和激光性质

研究了摩尔组分为70TeO2-(20-x)ZnO-xPbO-5La2O3-2.5K2O-2．5Na2O(x=0，5，10，15，20)的新型多元铅锌镧碲酸盐激光玻璃，外掺Yb2O3为玻璃摩尔组分的1％，测试了试样的物理性质及吸收光谱、荧光光谱和荧光寿命，计算了Yb^3+的吸收截面、受激发射截面、荧光有效线宽等光谱参数，结果表明：该系列玻璃都具有良好的热学稳定性((Tx-Tg)>195℃，高于TZN玻璃(118℃))；当X=15时，样品具有较好的光谱性质：高的受激发射截面(1．25pm^2)、长的荧光寿命(

Thermal stability and spectroscopic properties of Er3+-doped niobium tellurite glasses for broadband amplifiers

Three Er3+-doped tellurite glasses with compositions of 70TeO(2)-30ZnO, 70TeO(2)-20ZnO-10Nb(2)O(5) and 70TeO(2)-20ZnO-5BaO-5Nb(2)O(5) have been investigated for developing fiber and planar broadband amplifiers and lasers. The optical spectroscopic properties and thermal stability of Er3+-doped tellurite glasses have been discussed. The results show that the incorporation of Nb2O5 increases the thermal stability of Er3+-doped tellurite glasses significantly, Er3+-doped niobium tellurite glasses 70TeO(2)-20ZnO-10Nb(2)O(5) and 70TeO(2)-20ZnO-5BaO-5Nb(2)O(5) exhibit the good thermal stability (DeltaT > 150degreesC), the large emission cross-section (>10 x 10(-21) cm(2)) and broad full width at half maximum (similar to65 nm), will be preferable for broadband Er3+-doped fiber amplifiers. (C) 2004 Elsevier B.V. All rights reserved.

Ultrabroadband infrared luminescence and optical amplification in bismuth-doped germanosilicate glass

This letter reports the ultrabroadband infrared luminescence from 1000- to 1700-nm wavelength range and demonstrate optical amplification at the second optical communication window in a novel bismuth-doped germanosilicate glass. The full-width at half-maximum of the luminescence is about 300 mn and the optical gain is larger than 1.37 within the wavelength region from 1272 to 1348 nm with pump power 0.97 W. This material could be useful to fabricate ultrabroadband optical fiber amplifiers.

Analysis on fluorescence intensity reverse photonic phenomenon between red and green fluorescence of oxyfluoride nanophase vitroceramics

An interesting fluorescence intensity reverse photonic phenomenon between red and green fluorescence is investigated. The dynamic range. of intensity reverse between red and green fluorescence of Er( 0.5) Yb( 3): FOV oxyfluoride nanophase vitroceramics, when excited by 378.5nm and 522.5nm light respectively, is about 4.32 x 10(2). It is calculated that the phonon- assistant energy transfer rate of the electric multi- dipole interaction of {(4)G(11/2)( Er3+) -> F-4(9/2)( Er3+), F-2(7/2)( Yb3+). F-2(5/2)( Yb3+)} energy transfer of Er( 0.5) Yb( 3): FOV is around 1.380 x 10(8) s(-1), which is much larger than the relative multiphonon nonradiative relaxation rates 3.20 x 10(5) s(-1). That energy transfer rate for general material with same rare earth ion's concentration is about 1.194 x 10(5) s(-1). These are the reason to emerge the unusual intensity reverse phenomenon in Er( 0.5) Yb( 3): FOV. (C) 2007 Optical Society of America.

Gain characteristics of Er3+-doped phosphate glass fibres

An erbium-doped phosphate glass fibre has been drawn by the rod-in-tube technique in our laboratory. The gain for the Er3+-doped phosphate glass fibre with different pump powers and with different input signal wavelengths is investigated. The 2.2-cm-long fibre, pumped by a single-mode 980-nm fibre-pigtailed laser diode, can provide a net gain per unit length greater than 1.8dB/cm. The pump threshold is about 50 mW at the wavelength of 1534 nm, and below 70 mW at 1550 nm. The gain linewidth of the Er3+-doped phosphate glass fibre is greater than 34 nm and can cover the C band in optical communication networks.

Effects of PbF2 on the spectroscopic, lasing and structural properties of Yb3+-doped fluorophosphate glass

Effect of PbF2 on Yb3+ -doped fluorophosphate glasses is studied. Results indicate that proper amount of PbF2 has absolute advantages in improving the crystallization stability of fluorophosphate glasses. T, value performs a decreasing and increasing tendency with 25 mol% PbF2 as the turning-point. And the spectroscopic properties such as absorption and emission cross section, effective fluorescence linewidth are apparently enhanced with PbF2 over 25 mol%. Lasing parameters beta, I-sat and I-min increase slightly with the addition of PbF2. Raman analysis proves that over 20 mol% PbF2, destroys the phosphate vibration groups greatly. (c) 2005 Elsevier Ltd. All rights reserved.

Photonic nanowires directly drawn from bulk glasses

High-uniform nanowires with diameters down to 50 nm are directly taper-drawn from bulk glasses. Typical loss of these wires goes down to 0.1 dB/mm for single-mode operation. Favorable photonic properties such as high index for tight optical confinement in tellurite glass nanowires and photoluminescence for active devices in doped fluoride and phosphate glass nanowires are observed. Supporting high-index tellurite nanowires with solid substrates (such as silica glass and MgF2 crystal) and assembling low-loss microcoupler with these wires are also demonstrated. Photonic nanowires demonstrated in this work may open up vast opportunities for making versatile building blocks for future micro- and nanoscale photonic circuits and components. (c) 2006 Optical Society of America.