995 resultados para P CODES


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To search for compounds with superior anti-human immunodeficiency virus type 1 (HIV-1) activity, ten 5,5'-(p-phenylenebisazo)-8-hydroxyquinoline sulfonates (4a-j) were synthesized and preliminarily evaluated as HIV-1 inhibitors in vitro for the first time. Some compounds demonstrated anti-HIV-1 activity, especially 5,5'-(p-phenylenebisazo)-8-hydroxyquinoline p-ethylbenzenesulfonate (4g) and 5,5'-(p-phenylenebisazo)-8-hydroxyquinoline p-chlorobenzenesulfonate (41) showed the more potent anti-HIV-1 activity with 50% effective concentration (EC50) values of 2.59 and 4.01 mu g/ml, and therapeutic index (TI) values of 31.77 and 24.51, respectively.

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在猫基底前脑内侧隔核-斜角带核-基底核,P物质能神经元主要分布在内侧隔核-斜角带核,多数P物质能和胆碱能神经元各自归属不同的神经元亚群。

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A large database of 115 triaxial, direct simple shear, and cyclic tests on 19 clays and silts is presented and analysed to develop an empirical framework for the prediction of the mobilization of the undrained shear strength, cu, of natural clays tested from an initially isotropic state of stress. The strain at half the peak undrained strength (γM=2) is used to normalize the shear strain data between mobilized strengths of 0.2cu and 0.8cu. A power law with an exponent of 0.6 is found to describe all the normalized data within a strain factor of 1.75 when a representative sample provides a value for γM=2. Multi-linear regression analysis shows that γM=2 is a function of cu, plasticity index Ip, and initial mean effective stress p′0. Of the 97 stress-strain curves for which cu, Ip, and p′0 were available, the observed values of γM=2 fell within a factor of three of the regression; this additional uncertainty should be acknowledged if a designer wished to limit immediate foundation settlements on the basis of an undrained strength profile and the plasticity index of the clay. The influence of stress history is also discussed. The application of these stress-strain relations to serviceability design calculations is portrayed through a worked example. The implications for geotechnical decision-making and codes of practice are considered.

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Modeling and numerical analysis of diamond m-i-p+ diode have been performed for static and transient analysis using TCAD Sentaurus platform. The simulation results are compared with experimental measurements. Prediction of transient turn-off characteristics of diamond m-i-p+ diode at high temperature is performed for the first time. It was found that unlike conventional Si diode, peak reverse current in diamond m-i-p+ diode reduces with increasing temperature while on-state voltage drop increases. © 2011 IEEE.

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With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu2O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu2O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu2O films are reported. It is known from previously published work that the formation of pure Cu2O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu2O thin films (as opposed to CuO or mixed phase CuO/Cu2O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu2O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu2O films with electrical resistivity ranging from 102 to 104 Ω-cm, hole mobility of 1-10 cm2/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu 2O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu2O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells. © 2011 Elsevier B.V. All rights reserved.

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首次报道了对黑叶猴和菲氏叶猴的动脉的系统解剖观察, 记述了这二种叶猴 动脉分支的主要特征。并与其他灵长类比较结果表明, 叶猴的动脉除具有猴超 科共同特征外, 有些特征与类人猿相似, 比其他猴类更为进化, 部分特征似为 叶猴所特有。图5参18

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黑叶猴和菲氏叶猴的上肢肌和下腩肌系统解剖结果表明, 大部分与猴超科的 共同特征相一致, 也有一些差异。通过与其他灵长类的比较对存在差异的20条 上肢肌和17条下肢肌作了描述和讨论。参14