Effect of building integrated photovoltaics on microclimate of urban canopy layer

Building integrated photovoltaics (BIPV) has potential of becoming the mainstream of renewable energy in the urban environment. BIPV has significant influence on the thermal performance of building envelope and changes radiation energy balance by adding or replacing conventional building elements in urban areas. PTEBU model was developed to evaluate the effect of photovoltaic (PV) system on the microclimate of urban canopy layer. PTEBU model consists of four sub-models: PV thermal model, PV electrical performance model, building energy consumption model, and urban canyon energy budget model. PTEBU model is forced with temperature, wind speed, and solar radiation above the roof level and incorporates detailed data of PV system and urban canyon in Tianjin, China. The simulation results show that PV roof and PV façade with ventilated air gap significantly change the building surface temperature and sensible heat flux density, but the air temperature of urban canyon with PV module varies little compared with the urban canyon of no PV. The PV module also changes the magnitude and pattern of diurnal variation of the storage heat flux and the net radiation for the urban canyon with PV increase slightly. The increase in the PV conversion efficiency not only improves the PV power output, but also reduces the urban canyon air temperature. © 2006.

The Modeling of Ion Implantation in a Three-Layer Structure Using the Method of Dose Matching

The method of modeling ion implantation in a multilayer target using moments of a statistical distribution and numerical integration for dose calculation in each target layer is applied to the modelling of As⁺ in poly-Si/SiO2/Si. Good agreement with experiment is obtained. Copyright © 1985 by The Institute of Electrical and Electronics Engineers, Inc.

Robust airfoil design with respect to boundary layer transition

In order to disign an airfoil of which maximum lift coefficient (CL max) is not sensitive to location of forced top boundary layer transition. Taking maximizing mean value of CL max and minimizing standard deviation as biobjective, leading edge radius, manximum thickness and its location, maximum camber and its location as deterministic design variables, location of forced top boundary layer transition as stochastic variable, XFOIL as deterministic CFD solver, non-intrusive polynomial chaos as substitute of Monte Carlo method, we completed a robust airfoil design problem. Results demonstrate performance of initial airfoil is enhanced through reducing standard deviation of CL max. Besides, we also know maximum thickness has the most dominating effect on mean value of CL max, location of maximum thickness has the most dominating effect on standard deviation of CL max, maximum camber has a little effect on both mean value and standard deviation, and maximum camber is the only element of which increase can lead increase of mean value and standard deviation at the same time. Copyright © 2009 by the American Institute of Aeronautics and Astronautics, Inc.

Low on-resistance SOI dual-trench-gate MOSFET

A low specific on-resistance (R-{{\rm on}, {\rm sp}}) integrable silicon-on-insulator (SOI) MOSFET is proposed, and its mechanism is investigated by simulation. The SOI MOSFET features double trenches and dual gates (DTDG SOI): an oxide trench in the drift region, a buried gate inset in the oxide trench, and another trench gate (TG) extended to a buried oxide layer. First, the dual gates form dual conduction channels, and the extended gate widens the vertical conduction area; both of which sharply reduce R-{{\rm on}, {\rm sp}}. Second, the oxide trench folds the drift region in the vertical direction, resulting in a reduced device pitch and R-{{\rm on}, {\rm sp}}. Third, the oxide trench causes multidirectional depletion. This not only enhances the reduced surface field effect and thus reshapes the electric field distribution but also increases the drift doping concentration, leading to a reduced R-{{\rm on}, {\rm sp}} and an improved breakdown voltage (BV). Compared with a conventional SOI lateral Double-diffused metal oxide semiconductor (LDMOS), the DTDG MOSFET increases BV from 39 to 92 V at the same cell pitch or decreases R-{{\rm on}, { \rm sp}} by 77% at the same BV by simulation. Finally, the TG extended synchronously acts as an isolation trench between the high/low-voltage regions in a high-voltage integrated circuit, saving the chip area and simplifying the isolation process. © 2006 IEEE.

Assessment of computational fluid dynamics and experimental data for shock boundary-layer interactions

A workshop on the computational fluid dynamics (CFD) prediction of shock boundary-layer interactions (SBLIs) was held at the 48th AIAA Aerospace Sciences Meeting. As part of the workshop, numerous CFD analysts submitted solutions to four experimentally measured SBLIs. This paper describes the assessment of the CFD predictions. The assessment includes an uncertainty analysis of the experimental data, the definition of an error metric, and the application of that metric to the CFD solutions. The CFD solutions provided very similar levels of error and, in general, it was difficult to discern clear trends in the data. For the Reynolds-averaged Navier-Stokes (RANS) methods, the choice of turbulence model appeared to be the largest factor in solution accuracy. Scale-resolving methods, such as large-eddy simulation (LES), hybrid RANS/LES, and direct numerical simulation, produced error levels similar to RANS methods but provided superior predictions of normal stresses. Copyright © 2012 by Daniella E. Raveh and Michael Iovnovich.