995 resultados para Organic photovoltaics


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The effect of the concentration of 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl- 9-enyl)-4H-pyran(DCJTB) as dopant in tris(8-hydroxyquinoline) aluminium (Alq(3)) on the charge carrier recombination was studied by transient electroluminescence (EL). The electron-hole recombination coefficient (gamma) was determined from the long-time component of the temporal decay of the EL intensity after a rectangular voltage pulse was turned off. It was found that the coefficient monotonically decreased with an increase in the DCJTB-doping concentration. The monotonic decrease is attributed to concentration quenching on the excitons and coincided well with the reduction of the EL efficiency.

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The device performances of copper phthalocyanine (CuPc)-based organic thin-film transistors (OTFTs) in main components of air were studied. We found that the device stored in O-2 humidified by water exhibited the changes of electric characteristics including positive-shifted threshold voltage and lower I-on/I-off but unchanged mobility, which was similar to the device exposed to room air. These changes are attributed to O-2 doping to copper phthalocyanine thin film assisted by water. Furthermore, a cross-linked polyvinyl alcohol film was used as encapsulation layer to prevent the permeation of O-2 and water, which resulted in excellent stability even when devices were placed in air for over a year. Therefore, current studies will push the development of OTFTs for practical applications.

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An organic light-emitting diode fabricated by doping a europium, complex tris(dibiphenoylmethane)-mono (phenanthroline)-europium (Eu(DBPM)(3) (Phen)) into polymer poly(2-methoxy-5-(2-ethyl-hexyloxy)-1,4-phenylene) and poly(N-carbazole) was realized by spin coating. Comparison with other europium complexes, due to the existence of a larger spectral overlap between Eu(DBPM)(3)(Phen) and poly(2-methoxy-5-(2-ethyl-hexyloxy)-1,4phenylene), a high efficiency red emission was achieved. The device showed a turn-on voltage of 5.2 V The maximum efficiency reached 0.47 cd/A at luminance of 50 cd/m(2). The maximum luminance can reach 150 cd/m(2) at 95 mA/cm(2). To the best of our knowledge, this is one of the best results based on europium complexes by spin-casting method.

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Microcavity organic light-emitting diodes having a top metal mirror and a bottom dielectric mirror, which was distributed Bragg reflectors (DBR) fabricated by using TiO2-SiO2 alternative dielectric multilayer with a central stop-band and two sub-stop-bands, were fabricated. In the devices, the active layers consisted of a hole-transporting layer N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine (NPB) and an electron- transporting/emitting layer tris(8-hydroxy-quinoline) aluminum (Alq(3)). The relationship of the electroluminescent (EL) spectrum and efficiency with the thickness of the active layer and metal layer was studied. It was found that the EL emissive color did not strongly depend on the thickness of the organic layer and metal layer, which was attributed to the excellent photon confinement role of the narrow stop-band of the used dielectric mirror. Thus, high efficiency microcavity organic light-emitting diodes were achieved, and the peak wavelength and color purity were not obviously changed, via optimizing the thickness of organic layer and metal electrode.

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Organic mesoporous silicas (OMSs) were synthesized in the presence of urea via one-pot synthesis method, in which tetraethyl orthosilicate (TEOS) and 3-aminopropyltriethoxysilica (APTES) were used as the silica resources, non-ionic surfactant was used as the template. XRD results showed that the average periodic mesopore sizes of OMSs in the presence of urea were larger than those in the absence of urea. It was also found that the pore sizes of the products in the presence of urea distributed more narrowly than those in the absence of urea, and the contents of organosiloxane incorporated into OMSs, the pore wall thicknesses, the pore volumes and the surface areas of the products all increased with the use of urea. This shows a novel way to synthesize high regular and periodic organic mesoporous silicas.

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Stacked organic light-emitting devices (OLEDs) based on a europium complex Eu(TTA)(3) (Tmphen) (TTA = thenoyltrifluoroacetone,Tmphen = 3,4,7,8-tetramethyl-1,10-phenanthroline) were fabricated. In this stacked OLEDs, Li:BCP/V2O5 was used the intermediate charge generation layer sandwiched between two identical emissive units consisting of TPD/CBP:DCJTB:Eu(TTA)(3)(Tmphen)/BCP. As expected, the brightness and electroluminescent (EL) current efficiency were approximately enhanced by double times that of conventional single-unit devices. The stacked OLEDs showed the maximum luminance up to 3000 cd/m(2) at a current density of 190 mA/cm(2) and a current efficiency of 14.5 cd/A at a current density of 0.08 mA/cm(2). At the brightness of 100 cd/m(2), the current efficiency reached 10 cd/A at a current density of 1.6 mA/cm2.

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We demonstrate high efficiency red organic light-emitting diodes (OLEDs) based on a planar microcavity comprised of a dielectric mirror and a metal Mirror. The microcavity devices emitted red light at a peak wavelength of 610 nm with a full width at half maximum (FWHM) of 25 nm in the forward direction, and an enhancement of about 1.3 factor in electroluminescent (EL) efficiency has been experimentally achieved with respect to the conventional noncavity devices. For microcavity devices with the structure of distributed Bragg reflectors (DBR)/indium-tin-oxide(ITO)/V2O5/N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine(NPB)/4-(dicy-anome-thylene)-2-t-butyl-6(1,1,7,7-tetrame-thyljulolidyl-9-enyl)-4H-pyran(DCJTB):tris(8-hydroxyquinoline) aluminium (Alq(3))/Alq(3)/LiF/Al, the maximum brightness arrived at 37000 cd/m(2) at a current density of 460.0 mA/cm(2), and the current efficiency and power efficiency reach 13.7 cd/A at a current density of 0.23 mA/cm(2) and 13.3 lm/W respectively.

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Al/Ni bilayer cathode was used to improve the electroluminescent (EL) efficiency and stability in N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1' biphenyl 4,4'-dimaine (NPB)/tris-(8-hydroxyquinoline) aluminum (Alq(3))-based organic light-emitting diodes. The device with LiF/Al/Ni cathode achieved a maximum power efficiency of 2.8 lm/W at current density of 1.2 mA/cm(2), which is 1.4 times the efficiency of device with the state-of-the-art LiF/Al cathode. Importantly, the device stability was significantly enhanced due to the utilization of LiF/Al/Ni cathode. The lifetime at 30% decay in luminance for LiF/Al/Ni cathode was extrapolated to 400 It at an initial luminance of 100 cd/m(2), which is 10 times better than the LiF/Al cathode.

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An efficient cathode NaCl/Ca/Al used to improve the performance of organic light-emitting devices (OLEDs) was reported. Standard NM-bis(1-naphthyl)-NAP-diphenyl-1,1' biphenyl 4,4'-dimaine (NPB)/tris-(8-hydroxyquinoline) aluminum (Alq(3)) devices with NaCl/Ca/Al cathode showed dramatically enhanced electroluminescent (EL) efficiency. A power efficiency of 4.6 lm/W was obtained for OLEDs with 2 nm of NaCl and 10 nm of Ca, which is much higher than 2.0 lm/W, 3.1 lm/W, 2.1 lm/ W and 3.6 lm/W in devices using, respectively, the LiF (1 nm)/Al, LiF (1 nm)/Ca (10 nm)/Al, Ca (10 nm)/Al and NaCl (2 nm)/ Al cathodes. The investigation of the electron injection in electron-only devices indicates that the utilization of the NaCl/Ca/Al cathode substantially enhances the electron injection current, which in case of OLEDs leads to the improvement of the brightness and efficiency.

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Negative differential resistance ( NDR) and multilevel memory effects were obtained in organic devices consisting of an anthracene derivative, 9,10-bis-{ 9,9-di-[ 4-(phenyl-p-tolyl-amino)-phenyl]-9H-fluoren-2-yl}-anthracene ( DAFA), sandwiched between Ag and ITO electrodes. The application of a negative bias voltage leads to negative differential resistance in current-voltage characteristics and different negative voltages produce different conductance currents, resulting in the multilevel memory capability of the devices. The NDR property has been attributed to charge trapping at the DAFA/Ag interface. This opens up a wide range of application possibilities of such organic-based NDR devices in memory and logic circuits.

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We report the fabrication of organic thin-film transistors (OTFTs) with copper phthalocyanine (CuPc) as the semiconductor and calcium fluoride (CaF2) as the gate dielectric on the glass substrate. The fabricated transistors show a gate voltage dependent carrier field effect mobility that ranges from 0.001 to 0.5 cm(2) V-1 s(-1). In the devices, the CaF2 dielectric is formed by thermal evaporation; thus OTFTs with a top-gate structure can be fabricated. This provides a convenient way to produce high-performance OTFTs on a large scale and should be useful for the integration of organic displays.

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Organic white-light-emitting devices ( OLEDs) based on a multimode resonant microcavity defined by a pair of dielectric mirrors and metal mirrors were presented. By selective effects of the quarter-wave dielectric stack mirror on mode, white light emission containing three individual narrow peaks of red, green and blue was achieved, and showed weak dependence on the viewing angle. The Commission Internationale De L'Eclairage ( CIE) chromaticity coordinates changed from ( 0.29, 0.37) at 0 degrees to ( 0.31, 0.33) at 40 degrees. Furthermore, the brightness and electroluminescence efficiency of the microcavity OLEDs were enhanced compared with noncavity OLEDs. The maximum brightness reached 1940 cd m(-2) at a current density of 200 mA cm(-2), and the maximum current efficiency and power efficiency are 1.6 cd A(-1) at a current density of 12 mA cm(-2) and 0.41 1m W-1 at a current density of 1.6 mA cm(-2), which are over 1.6 times higher than that of a noncavity OLED.

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An organic integrated pixel consisting of an organic light-emitting diode driven by an organic thin-film field-effect transistor (OTFT) was fabricated by a full evaporation method oil a transparent glass substrate. The OTFT was designed as a top-gate Structure, and the insulator is composed of a double-layer polymer of Nylon 6 and Teflon to lower the operation voltage and the gate-leakage current, and improve the device stability. The field-effect mobility of the OTFT is more than 0.5 cm(2) V-1 s(-1), and the on/off ratio is larger than 10(3). The brightness of the pixel reached as large as 300 cd m(-2) at a driving current of 50 mu A.

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Ambient reflection of organic light-emitting diodes (OLEDs) is reduced by utilizing a multilayer low-reflection cathode. The low-reflection cathode structure consists of a semitransparent cathode layer, a transparent spacing layer and a high reflective layer. Metals with different optical properties, including silver (Ag) and samarium (Sm), are used as the semitransparent cathode layer, tris(8-quinolinolato) aluminium (Alq(3)) and aluminium (Al) are used as the spacing layer and high reflective layer, respectively. The incident ambient light could be reduced by the cathode structure via destructive optical interference. It is found that the Ag/Alq(3)/Al cathode shows a strong wavelength-dependent reflection. However, the Sm/Alq(3)/Al cathode demonstrates a low reflection in the whole visible range, and the resulting OLED shows a reduced luminous reflectance of 2.7% as compared to 81% for a control device with LiF/Al cathode. A further reduction to 0.9% is realized by replacing a multilayer of Alq(3)/Sm/Alq(3) for the single layer of Alq(3).

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A multilayer white organic light-emitting diode (OLED) with high efficiency was present. The luminescent layer was composed of a red dye 4-(dicyanomethylene)-2-t-butyle-6-(1,1,7,7-tetra-methyljulolidyl-9-enyl)-4H-pyran (DCJTB) doped into NN-bis-(1-naphthyl)-N,N-diphenyl-1,1-biphenyl-4-4-diamine (NPB) layer and a blue-emitting 9,10-bis-(beta-naphthyl)-anthrene (DNA) layer. Red and blue emission, respectively, from DCJTB:NPB and DNA can be obtained by effectively controlling the thicknesses of DCJTB:NPB and DNA layers, thus a stable white light emission was achieved. The device turned on at 3.5 V, and the maximum luminance reached 16000 cd/m(2) at 21 V. The maximum current efficiency and power efficiency were 13.6 cd/A and 5.5 lm/W, respectively.