Microbial alterations of the soil influenced by induced compaction

Compaction is one of the most destructive factors of soil quality, however the effects on the microbial community and enzyme activity have not been investigated in detail so far. The objective of this study was to evaluate the effects of soil compaction caused by the traffic of agricultural machines on the soil microbial community and its enzyme activity. Six compaction levels were induced by tractors with different weights driving over a Eutrustox soil and the final density was measured. Soil samples were collected after corn from the layers 0-0.10 and 0.10-0.20 m. The compaction effect on all studied properties was evident. Total bacteria counts were reduced significantly (by 22-30 %) and by 38-41 % of nitrifying bacteria in the soil with highest bulk density compared to the control. On the other hand, fungi populations increased 55-86 % and denitrifying bacteria 49-53 %. Dehydrogenase activity decreased 20-34 %, urease 44-46 % and phosphatase 26-28 %. The organic matter content and soil pH decreased more in the 0-0.10 than in the 0.10-0.20 m layer and possibly influenced the reduction of the microbial counts, except denitrifying bacteria, and all enzyme activities, except urease. Results indicated that soil compaction influences the community of aerobic microorganisms and their activity. This effect can alter nutrient cycling and reduce crop yields.

Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers

The origin of the microscopic inhomogeneities in InxGa12xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8 mm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05,x,0.8). On the other hand, in thin enough layers strain inhomogeneities are dominant. This evolution in line with layer thickness is due to the atomic diffusion at the surface during growth, induced by the strain inhomogeneities that arise from stress relaxation. In consequence, the strain variations present in the layer are converted into composition variations during growth. This process is energetically favorable as it diminishes elastic energy. An additional support to this hypothesis is given by a clear proportionality between the magnitude of the composition variations and the mean strain.

Effects of prior hydrogenation on the structure and properties of thermally nanocrystallized silicon layers

Nanocrystalline silicon layers have been obtained by thermal annealing of films sputtered in various hydrogen partial pressures. The as-deposited and crystallized films were investigated by infrared, Raman, x-ray diffraction, electron microscopy, and optical absorption techniques. The obtained data show evidence of a close correlation between the microstructure and properties of the processed material, and the hydrogen content in the as-grown deposit. The minimum stress deduced from Raman was found to correspond to the widest band gap and to a maximum hydrogen content in the basic unannealed sample. Such a structure relaxation seems to originate from the so-called "chemical annealing" thought to be due to Si-H2 species, as identified by infrared spectroscopy. The variation of the band gap has been interpreted in terms of the changes in the band tails associated with the disorder which would be induced by stress. Finally, the layers originally deposited with the highest hydrogen pressure show a lowest stress-which does not correlate with the hydrogen content and the optical band gap¿and some texturing. These features are likely related to the presence in these layers of a significant crystalline fraction already before annealing.