Effect of annealing on phase transition in poly(vinylidene fluoride) films prepared using polar solvent

The gamma-phase poly (vinylidene fluoride) (PVDF) films are usually prepared using dimethyl sulfoxide (DMSO) solvent, regardless of preparation temperature. Here we report the crystallization of both alpha and gamma-phase PVDF films by varying preparation temperature using DMSO solvent. The gamma-phase PVDF films were annealed at 70, 90, 110, 130 and 160 degrees C for five hours. The changes in the phase contents in the PVDF at different annealing conditions have been described. When thin films were annealed at 90 degrees C for 5 h, maximum percentage of beta-phase appears in PVDF thin films. The gamma-phase PVDF films completely converted to alpha-phase when they were annealed at 160 degrees C for 5 h. From X-ray diffraction (XRD), Fourier transform infrared spectrum (FTIR), differential scanning calorimetry (DSC) and Raman studies, it is confirmed that the PVDF thin films, cast from solution and annealed at 90 degrees C for 5 h, have maximum percentage of beta-phase. The beta-phase PVDF shows a remnant polarization of 4.9 mu C/cm(2) at 1400 kV/cm at 1 Hz.

Gate Drive Card for High Power Three Phase PWM Converters

Gate driver is an integral part of every power converter, drives the power semiconductor devices and also provides protection for the switches against short-circuit events and over-voltages during shut down. Gate drive card for IGBTs and MOSFETs with basic features can be designed easily by making use of discrete electronic components. Gate driver ICs provides attractive features in a single package, which improves reliability and reduces effort of design engineers. Either case needs one or more isolated power supplies to drive each power semiconductor devices and provide isolation to the control circuitry from the power circuit. The primary emphasis is then to provide simplified and compact isolated power supplies to the gate drive card with the requisite isolation strength and which consumes less space, and for providing thermal protection to the power semiconductor modules for 3-� 3 wire or 4 wire inverters.

Some adsorption-nucleation-based models for electrochemical phase formation

A new class of models which are based on adsorption, nucleation growth and their coupling is discussed. In particular, the potentiostatic response of a model that involves nucleative phase growth via direct incorporation and adsorptive discharge of metal ions on the free area is analysed for both instantaneous and progressive nucleation. This model is able to predict certain experimental features in the potentiostatic transient, like the initial fall, shoulder or maximum (as well as minimum) which have not been predicted by models analysed hitherto.Limiting behaviour for short and long times as well as a description of the above-mentioned features in terms of model parameters are given.A special case of the above model, viz. a reversible adsorption–nucleation model, wherein the adsorption is very fast, is shown to give rise to transients which can be distinguished from the pure nucleation-growth transients only by its parametric dependence, but not by the form.

Growth and consumption rates of the phase layers during interdiffusion in a diffusion couple with finite end member

The relations for the growth and consumption rates of a layer with finite thickness as an end member and the product phases in the interdiffusion zone are developed. We have used two different methodologies, the diffusion based and the physico-chemical approach to develop the same relations. We have shown that the diffusion based approach is rather straightforward; however, the physico-chemical approach is much more versatile than the other method. It was found that the position of the marker plane becomes vague in the second stage of the interdiffusion process in pure A thin layer/B couple, where two phases grow simultaneously.

Control technique for non-linear and unbalance compensation of an integrated magnetics-based three-phase series-shunt-compensated uninterruptible power supply

Handling unbalanced and non-linear loads in a three-phase AC power supply has always been a difficult issue. This has been addressed in the literature by either using fast controllers in the fundamental rotating reference frame or using separate controllers in reference frames specific to the harmonics. In the former case, the controller needs to be fast and in the latter case, besides the need for many controllers, negative-sequence components need to be extracted from the measured signal. This study proposes a control scheme for harmonic and unbalance compensation of a three-phase uninterruptible power supply wherein the problems mentioned above are addressed. The control takes place in the fundamental positive-sequence reference frame using only a set of feedback and feed-forward compensators. The harmonic components are extracted by a process of frame transformations and used as feed-forward compensation terms in the positive-sequence fundamental reference frame. This study uses a method wherein the measured signal itself is used for fundamental negative-sequence compensation. As the feed-forward compensator handles the high-bandwidth components, the feedback compensator can be a simple low-bandwidth one. This control algorithm is explained and validated experimentally.