The influence of nitrogen and phosphorus on the growth of a diatom Skeletonema costatum (Greville) Cleve

Nitrogen and phosphorus requirements of a chain-forming diatom, Skeletonema costatum (Greville) Cleve, collected from Yatsushiro Sea, Japan, were investigated in a laboratory culture experiment. Sodium nitrate and sodium glycerophosphate were used as nitrogen and phosphorus sources, respectively. Cultures were grown in modified Provasoli's ASP2NTA medium (Provasoli et al. 1957) at 25±1°C, light intensity 60 µE mˉ² secˉ¹ and photoperiod 12:12-h, L:D cycle. Optimum growth was observed at nitrate concentrations of 3-10 mglˉ¹ and phosphate concentrations of 1.5-15 mglˉ¹. Adequate growth was also found at the nitrate concentration of up to as high as 300 mglˉ¹. Significantly poorer growth was found at lower nitrate (<3.0 mglˉ¹) and higher phosphate (>15 mglˉ¹) concentrations. From the present study, it is concluded that S. costatum can grow well at wide ranges of nitrate concentrations but is sensitive to higher phosphate concentrations.

Observations on changes in the major protein nitrogen fraction of prawns and sardines during ice storage

Changes in the major protein nitrogen fractions (sarcoplasmic, myofibrillar, stroma) have been studied in two species of prawns and in oil sardine held in ice storage. Myofibrillar proteins were observed to get denatured at a rapid rate as determined by salt extractability method. The sarcoplasmic proteins were not denatured to any considerable extent. With sardine however, the extraction of myofibrillar proteins was inhibited rather in the uniced condition itself presumably owing to the presence of free fatty acids.

Effect of deposition conditions on the chemical bonding in sputtered carbon nitride films

A balanced planar r.f. powered magnetron sputter source has been used to deposit carbon nitride films from a graphite target under various conditions. Sample temperature, bias voltage and nitrogen content in the gas mixture were varied. The effects of oxygen, methane and ammonia on the film growth were also studied. Special attention was paid to the effects of the deposition parameters on the structure of the films, in particular the hybridisation of the carbon and nitrogen bonding. The chemical bonding of the carbon and nitrogen atoms was studied by electron energy loss spectroscopy (EELS). The chemical composition was evaluated by Rutherford back-scattering. The intensity of transitions to π antibonding orbitals, as revealed by EELS, was found to increase with the nitrogen content in the films. Ion bombardment of the films during growth and the addition of oxygen or hydrogen-rich gases further increased the proportion of π bonds of both the carbon and nitrogen atoms. It is suggested that the increase in the transitions to μ antibond orbitals is to be explained by increased sp2 or possibly sp hybridisation of the carbon and nitrogen. Also, the effect of annealing on the bonding of nitrogen rich films after deposition was tested. The changes caused by nitrogen and deposition conditions are consistent with previous reports on the formation of paracyanogen structures.

TIME RESOLVED REFLECTIVITY MEASUREMENTS APPLIED TO RAPID ISOTHERMAL ANNEALING OF ION IMPLANTED SILICON.

The annealing of ion implantation damage in silicon by rapid isothermal heating has been monitored by the time resolved reflectivity (TRR) method. This technique was applied simultaneously at a wavelength of 632. 8nm and also at 1152nm, where the optical absorption coefficient of silicon is less. The two wavelength method simplifies the interpretation of TRR results, extends the measurement depth and allows good resolution of the position of the interface between amorphous and crystalline silicon. The regrowth of amorphous layers in silicon, created by self implantation and implanted with electrically active impurities, was observed. Regrowth in rapid isothermal annealing occurs during the heating up stage of typical thermal cycles. Impurities such as B, P, and As increase the regrowth rate in a manner consistent with a vacancy model for regrowth. The maximum regrowth rate in boron implanted silicon is limited by the solid solubility.

Mode control in vertical-cavity surface-emitting lasers by post-processing using focused ion-beaih etching

Single-mode emission is achieved in previously multimode gain-guided vertical-cavity surface-emitting lasers (VCSEL's) by localized modification of the mirror reflectivity using focused ion-beam etching. Reflectivity engineering is also demonstrated to suppress transverse mode emission in an oxide-confined device, reducing the spectral width from 1.2 nm to less than 0.5 nm.

Mechanism of polarization pinning in vertical cavity surface emitting lasers using focused ion beam etching

Photoluminescence experiments have identified strain as the origin for polarization pinning in vertical cavity surface emitting lasers post-processed by focused ion beam etching. Theoretical models were applied to deduce the strain in devices. Post-annealing was used to optimize polarization pinning.

High power laser with integrated lens using focused ion beam etching

In this study, a collimating lens is introduced at the output facet of a tapered waveguide laser to compensate for the divergence of the optical mode. The collimating lens is shown to enhance the laser efficiency while simultaneously reducing the far field divergence.

Preparation of tetrahedral amorphous carbon films by filtered cathodic vacuum arc deposition

Tetrahedrally bonded amorphous carbon (ta-C) and nitrogen doped (ta-C:N) films were obtained at room temperature in a filtered cathodic vacuum arc (FCVA) system incorporating an off-plane double bend (S-bend) magnetic filter. The influence of the negative bias voltage applied to substrates (from -20 to -350 V) and the nitrogen background pressure (up to 10-3 Torr) on film properties was studied by scanning electron microscopy (SEM), electron energy loss spectroscopy (EELS), Raman spectroscopy, X-ray photoemission spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and X-ray reflectivity (XRR). The ta-C films showed sp3 fractions between 84% and 88%, and mass densities around 3.2 g/cm3 in the wide range of bias voltage studied. In contrast, the compressive stress showed a maximum value of 11 GPa for bias voltages around -90 V, whereas for lower and higher bias voltages the stress decreased to 6 GPa. As for the ta-C:N films grown at bias voltages below -200 V and with N contents up to 7%, it has been found that the N atoms were preferentially sp3 bonded to the carbon network with a reduction in stress below 8 GPa. Further increase in bias voltage or N content increased the sp2 fraction, leading to a reduction in film density to 2.7 g/cm3.

Focused ion beam etching of GaN

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching - a well-established technique for optical mask repair and for IC failure analysis and repair - without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5×10 -4μm3/pC. At a current of 3nA, for example, this corresponds to an etch rate of 1.05μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1μm. Changes in the roughness of the etched surface plane stay below 8nm.

Vertically aligned carbon nanotubes growth using self-assembled Ni nanoparticles produced by ion implantation

An alternative method for seeding catalyst nanoparticles for carbon nanotubes and nanowires growth is presented. Ni nanoparticles are formed inside a 450 nm SiO2 film on (100) Si wafers through the implantation of Ni ions at fluences of 7.5×1015 and 1.7×1016 ions.cm-2 and post-annealing treatments at 700, 900 and 1100°C. After exposed to the surface by HF dip etching, the Ni nanoparticles are used as catalyst for the growth of vertically aligned carbon nanotubes by direct current plasma enhanced chemical vapor deposition. © 2007 Materials Research Society.

Influence of nitrogen salts on growth and physiological responses of Rhizophora apiculata Blume in non-aerated water culture

Influence of two different forms of nitrogen on growth and physiological aspects of water-cultured seedlings of Rhizophora apiculata was studied. Of the two forms of nitrogen supplied to the growth medium, ammonium nitrogen was better than nitrate nitrogen by exhibiting increased dry matter production, shoot length, leaf area and also enhanced the contents of carotenoids, chlorophylls and their presence in photosystems and light harvesting protein complex.

Nitrogen-fixing aerobic bacteria and their nitrogenase activity in north Mumbai coastal waters

The effect of the physicochemical parameters of water and soil on the distribution of nitrogen-fixing bacteria and their nitrogen-fixing capacity was studied. Four species of nitrogen-fixing bacteria, e. g. Azotobacter chroococcum, A. vinelandii, A. beijerinckii and A. armeniacus, were recorded from water and soil samples of Mumbai coast. A higher number of bacterial populations were observed in sediment than in water samples. A positive correlation was observed between the dissolved organic matter and nitrogen fixing bacterial populations of water as well as between available phosphorus and the nitrogen-fixing bacteria of sediment. The nitrogen-fixing capacity of A. chroococcum was found to be 1.076 nmol C sub(2) H sub(4)/l/d and that of A. vinelandii was 0.965 nmol C sub(2) H sub(4)/l/d. Station 1 showed higher level of nitrogenase activity in comparison to other four stations.