Analysis of amorphous carbon thin films by spectroscopic ellipsometry

Using spectroscopic ellipsometry (SE), we have measured the optical properties of amorphous carbon (a-C) films ∼ 10-30 nm thick prepared using a filtered beam of C+ ions from a cathodic arc. Such films exhibit a wide range of sp3-bonded carbon contents from 20 to 76 at.% as measured by electron energy loss spectroscopy (EELS), and a range of optical gaps from 0.65 eV (20 at.% sp3 C) to 2.25 eV (76 at.% sp3 C) as measured by SE. SE data from 1.5 to 5 eV have been analyzed by applying the most widely used effective medium theory (EMT) namely that of Bruggeman with isotropic screening, assuming a model of the material as a composite with sp2 C and sp3 C components. Although the atomic fractions of sp3 C deduced by SE with the Bruggeman EMT correlate monotonically with those obtained by EELS, the SE results range from 10 to 25 at.% higher. The possible origins of this discrepancy are discussed within the framework of an optical composite. Improved agreement between SE and EELS is obtained by employing a simple form for the EMT, in which the effective dielectric function is determined as a volume-fraction-weighted average of the dielectric functions of the two components. © 1998 Elsevier Science B.V. All rights reserved.

Surface Stability of Epitaxial Elastic Films by Casimir Force

We investigate the morphological stability of epitaxial thin elastic films on a substrate by the Casimir force between the film surface and a flat plate. Critical undulation wavelengths are derived for two different limit conditions. Consideration of the Casimir force in both limit cases decreases the critical wavelength of the surface perturbation.

Fabrication and electrical characteristics of carbon nanotube-based microcathodes for use in a parallel electron-beam lithography system

The development of the Nanolith parallel electron-beam writing head was discussed. The fabrication and electrical characteristics of carbon nanotube-based microcathodes for use in the lithographic system were described. The microcathode exhibited a peak current of 10.5 μA at 48 V when operated with a duty cycle of 0.5 percent.

Characteristics of multiwalled carbon nanotube nanobridges fabricated by poly(methylmethacrylate) suspended dispersion

Transport measurements were performed on individual PECVD grown MWCNT nanobridge structures. Temperature dependent conductance measurements show that as the temperature is decreased, the conductance also decreases. The nanotubes were able to carry high current densities with the observed maximum at ∼108 A/cm2. High volatile measurements reveal that the PECVD grown MWCNTs break down in segments of nanotube shells.

Self-aligned electrodes for suspended carbon nanotube structures

We report on a study into electrode fabrication for the gate control of carbon nanotubes partially suspended above an oxidised silicon substrate. A fabrication technique has been developed that allows self-aligned side-gate electrodes to be placed with respect to an individual nanotube with a spacing of less than 10 nm. The suspended multi-walled carbon nanotube (MWCNT) is used as an evaporation mask during metal deposition. The metal forms an island on the nanotube, with increasing width as the metal is deposited, forming a wedge shape, so that even thick deposited layers yield islands that remain separated from the metal deposited on the substrate due to shadowing of the evaporation. The island can be removed during lift-off to leave a set of self-aligned electrodes on the substrate. Results show that Cr yields self-aligned side gates with around 90% effectiveness. © 2003 Elsevier Science B.V. All rights reserved.

Fabrication of multiwalled carbon nanotube bridges by poly-methylmethacrylate suspended dispersion

Poly-methylmethacrylate suspended dispersion was used to fabricate multiwalled carbon nanotube (MWCNT) bridges. Using this technique, nanotubes could be suspended between metal electrodes without any chemical etching of the substrate. The electrical measurement on suspended MWCNT bridges shows that the room temperature resistance ranges from under a kω to a few Mω.

Fabrication of carbon nanotube lateral field emitters

We report on the fabrication and field emission of carbon nanotube lateral field emitters. Due to its high aspect ratio and mechanical strength, we use vertically aligned multi-wall carbon nanotubes prepared by plasma-enhanced chemical vapour deposition as cathodes, which makes the fabrication of cantilever type lateral field emitters possible. The emission characteristics show that the field emission initiates at 11-17 V. The device has high geometrical enhancement factors (9.3 × 106 cm-1) compared to standard Spindt tips, which may be due to increased field concentration at the nanotube tip and the close proximity of the anode (<1 μm). The relative ease of fabrication compared to vertical field emitters and enhanced field emission characteristics observed makes the carbon nanotube lateral field emitter a good candidate for future integrated nano-electronic devices.

Study of multi-walled carbon nanotube structures fabricated by PMMA suspended dispersion

We report on the electrical characteristics of plasma enhanced chemical vapour deposition (PECVD)-grown, multi-walled carbon nanotube (MWCNT) devices made by a new fabrication method, PMMA suspended dispersion. This method makes it possible to suspend nanotubes between metal electrodes and to remove unwanted nanotubes from the substrate. The measurements show that the MWCNTs are metallic and able to maintain a current density ∼2×106 A/cm2 for more than 15 days with a maximum current density of ∼1.8×107 A/cm2. This high current density and reliability will make PECVD-grown MWCNTs applicable to field emission cathodes. © 2002 Elsevier Science B.V. All rights reserved.

Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors

The subthreshold slope, transconductance, threshold voltage, and hysteresis of a carbon nanotube field-effect transistor (CNT FET) were examined as its configuration was changed from bottom-gate exposed channel, bottom-gate covered channel to top-gate FET. An individual single wall CNT was grown by chemical vapor deposition and its gate configuration was changed while determining its transistor characteristics to ensure that the measurements were not a function of different chirality or diameter CNTs. The bottom-gate exposed CNT FET utilized 900 nm SiO2 as the gate insulator. This CNT FET was then covered with TiO2 to form the bottom-gate covered channel CNT FET. Finally, the top-gate CNT FET was fabricated and the device utilized TiO 2 (K ∼ 80, equivalent oxide thickness=0.25 nm) as the gate insulator. Of the three configurations investigated, the top-gate device exhibited best subthreshold slope (67-70 mV/dec), highest transconductance (1.3 μS), and negligible hysteresis in terms of threshold voltage shift. © 2006 American Institute of Physics.