Vapor pressure and thermodynamic properties of MgIn2O4

The vapor pressure of pure indium, and the sum of the pressures of (In) and (In2O) species over the condensed phase mixture {In} + 〈MgIn2O4〉 + 〈MgO〉, have been measured by the Knudsen effusion technique in the temperature range 1095–1350 K. The materials under study were contained in a zirconia crucible, which had a Knudsen orifice along the vertical wall. The major vapor species over the condensed phase mixture were identified as (In) and (In2O) using a mass-spectrometer. The vapor pressure of (In2O) corresponding to the reaction,View the MathML source was deduced from the experimental results;View the MathML source The standard free energy of formation of the inverse spinel 〈MgIn2O4〉 from its component oxides, is given by,View the MathML source View the MathML source The entropy of transformation of 〈In2O3〉 from the C rare-earth structure to the corundum structure is evaluated from the measured entropy of formation of (MgIn2O4) and a semi-empirical correlation for the entropy of formation of spinel phases from component oxides with rock-salt and corundum structures.

Effect of rolling temperature and reduction in thickness on microstructure and mechanical properties of ZM21 magnesium alloy and its subsequent annealing treatment

In this present paper, the effects of non-isothermal rolling temperature and reduction in thickness followed by annealing on microstructure and mechanical properties of ZM21 magnesium alloy were investigated. The alloy rolled at four different temperatures 250 degrees C, 300 degrees C, 350 degrees C and 400 degrees C with reductions of 25%, 50% and 75%. Non-isothermal rolling resulted in grain refinement, introduction of shear bands and twins in the matrix alloy. Partial to full recrystallization was observed when the rolling temperature was above recrystallization temperature. Rolling and subsequent annealing resulted in strain-free equiaxed grains and complete disappearance of shear bands and twins. Maximum ultimate strength (345 MPa) with good ductility (14%) observed in the sample rolled at 250 degrees C with 75% reduction in thickness followed by short annealing. Recrystallization during warm/hot rolling was sluggish, but post-roll treatment gives distinct views about dynamic and static recrystallization. (C) 2011 Elsevier B.V. All rights reserved.

Anomalous temperature dependence of phonons and photoluminescence bands in pyrochlore Er(2)Ti(2)O(7): signatures of structural deformation at 130 K

We report a Raman study of single crystal pyrochlore Er(2)Ti(2)O(7) as a function of temperature from 12 to 300 K. In addition to the phonons, various photoluminescence (PL) lines of Er(3+) in the visible range are also observed. Our Raman data show an anomalous red-shift of two phonons (one at similar to 200 cm(-1) and another at similar to 520 cm(-1)) upon cooling from room temperature which is attributed to phonon-phonon anharmonic interactions. However, the phonons at similar to 310, 330, and 690 cm(-1) initially show a blue-shift upon cooling from room temperature down to about 130 K, followed by a red-shift, indicating a structural deformation at similar to 130 K. The intensities of the PL bands associated with the transitions between the various levels of the ground state manifold ((4)I(15/2)) and the (2)H(11/2) as well as (4)S(3/2) excited state manifolds of Er(3+) show a change at similar to 130 K. Moreover, the temperature dependence of the peak position of the two PL bands shows a change in their slope (d(omega)/d(T)) at similar to 130 K, thus further strengthening the proposal of a structural deformation. The temperature dependence of the peak positions of the PL bands has been analyzed using the theory of optical dephasing in crystals.

Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm(-1) in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be >1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy. (C) 2011 American Institute of Physics. [doi:10.1063/1.3654151]

Corrosion of 310 stainless steel in H2 H2O-H2S gas mixtures; studies at constant temperature and fixed oxygen potential

Corrosion of SAE 310 stainless steel in H2-H2O-H2S gas mixtures was studied at a constant temperature of 1150 K. Reactive gas mixtures were chosen to yield a constant oxygen potential of approximately 6 × 10-13 Nm-2 and sulfur potentials ranging from 0.19 × 10-2 Nm-2 to 33 × 10-2 Nm-2. The kinetics of corrosion were determined using a thermobalance, and the scales were analyzed using metallography, scanning electron microscopy, and energy dispersive X-ray analysis. Two corrosion regimes, which were dependent on sulfur potential, were identified. At high sulfur potentials (P S 2 ± 2.7 × 10-2 Nm-2) the corrosion rates were high, the kinetics obeyed a linear rate equation, and the scales consisted mainly of sulfide phases similar to those observed from pure sulfidation. At low sulfur potentials (P S 2 ± 0.19 × 10-2 Nm-2) the corrosion rates were low, the kinetics obeyed a parabolic rate equation, and scales consisted mainly of oxide phases. Thermochemical diagrams for the Fe-Cr-S-O, Fe-Ni-S-O, Cr-Ni-S-O, and Si-Cr-S-O systems were constructed, and the experimental results are discussed in relation to these diagrams. Based on this comparison, reasonable corrosion mechanisms were developed. At high sulfur potentials, oxide and sulfide phases initially nucleate as separate islands. Overgrowth of the oxide by the sulfide occurs and an exchange reaction governs the corrosion process. Preoxidation at low oxygen potentials and 1150 K is beneficial in suppressing sulfidation at high sulfur potentials.

Preparation of ultrafine CsCl crystallites by combined cryogenic and room temperature ball milling

The present investigation reports the preparation and microstructural characterization of ultrafine CsCl crystallites using combined cryogenic and room temperature (RT) mechanical milling. The milling has been performed in evacuated WC vials under high purity argon atmosphere. The low temperature milling has been utilized as an effective means of rapid fracturing of the CsCl crystallites. This was followed by RT milling for different time durations. The final crystallite size obtained is 10 +/- 6 nm for sample cryo-milled for 11 h and subsequently RT milled for 35 h. The experimental findings indicate the strong effect of duration of cryo-milling on the final size of the crystallites. The prolonged room temperature milling leads to increase of the crystallite size due to deformation-induced sintering. The results have been discussed in the light of currently available literature. (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

High temperature seebeck measurements on YBa2Cu3O7-δ

The Seebeck coefficient (S) of YBa2Cu3O7-δ was measured in the temperature range 450 – 1200 K in air and in pure oxygen in order to derive information on charge carrier concentration. The orthorhombic to tetragonal phase transition manifests as maxima in the variation of (dS/dT) with temperature. Seebeck coefficient in air decreases beyond ∼ 1130K corresponding to a value of δ = 0.73.

Subdiffusion as a model of transport through the nuclear pore complex

Cargo transport through the nuclear pore complex continues to be a subject of considerable interest to experimentalists and theorists alike. Several recent studies have revealed details of the process that have still to be fully understood, among them the apparent nonlinearity between cargo size and the pore crossing time, the skewed, asymmetric nature of the distribution of such crossing times, and the non-exponentiality in the decay profile of the dynamic autocorrelation function of cargo positions. In this paper, we show that a model of pore transport based on subdiffusive particle motion is in qualitative agreement with many of these observations. The model corresponds to a process of stochastic binding and release of the particle as it moves through the channel. It suggests that the phenylalanine-glycine repeat units that form an entangled polymer mesh across the channel may be involved in translocation, since these units have the potential to intermittently bind to hydrophobic receptor sites on the transporter protein. (C) 2011 American Institute of Physics. [doi:10.1063/1.3651100]

Temperature dependence of the energy gap and free carrier absorption in bulk InAs0.05Sb0.95 single crystals

Temperature dependence of the energy gap and free carrier absorption in a high-quality InAs0.05Sb0.95 single crystal was studied between 90 K and 430 K through the absorption spectra. At this alloy concentration, the room-temperature energy gap was measured to be 0.15 eV. Varshni- and the Bose–Einstein-type fit parameters were obtained from the measured temperature dependence of the energy gap, and the latter gave the zero-temperature gap to be 0.214 eV. It was found that although Weider’s empirical formula for the dependence of the energy gap on temperature and the alloy concentration agrees with the value of the gap at room temperature, it is inaccurate in describing its temperature dependence. From the free carrier absorption measurements, the phonon limited cross section of 7.35×10−16 cm2 at 15 μm was deduced at room temperature.

High room-temperature hole mobility in Ge0.7Si0.3/Ge/Ge0.7Si0.3 modulation-doped heterostructures

Modulation-doped two-dimensional hole gas structures consisting of a strained germanium channel on relaxed Ge0.7Si0.3 buffer layers were grown by molecular-beam epitaxy. Sample processing was optimized to substantially reduce the contribution from the parasitic conducting layers. Very high hall mobilities of 1700 cm2/V s for holes were observed at 295 K which are the highest reported to date for any kind of p-type silicon-based heterostructures. Hall measurements were carried out from 13 to 300 K to determine the temperature dependence of the mobility and carrier concentration. The carrier concentration at room temperature was 7.9×1011 cm−2 and decreased by only 26% at 13 K, indicating very little parallel conduction. The high-temperature mobility obeys a T−α behavior with α∼2, which can be attributed to intraband optical phonon scattering.

Stress Evolution With Temperature in Titanium-Rich NiTi Shape Memory Alloy Films

The effect of deposition temperature on residual stress evolution with temperature in Ti-rich NiTi films deposited on silicon substrates was studied. Ti-rich NiTi films were deposited on 3? Si (100) substrates by DC magnetron sputtering at three deposition temperatures (300, 350 and 400 degrees C) with subsequent annealing in vacuum at their respective deposition temperatures for 4 h. The initial value of residual stress was found to be the highest for the film deposited and annealed at 400 degrees C and the lowest for the film deposited and annealed at 300 degrees C. All the three films were found to be amorphous in the as-deposited and annealed conditions. The nature of the stress response with temperature on heating in the first cycle (room temperature to 450 degrees C) was similar for all three films although the spike in tensile stress, which occurs at similar to 330 degrees C, was significantly higher in the film deposited and annealed at 300 degrees C. All the films were also found to undergo partial crystallisation on heating up to 450 degrees C and this resulted in decrease in the stress values around 5560 degrees C in the cooling cycle. The stress response with temperature in the second thermal cycle (room temperature to 450 degrees C and back), which is reflective of the intrinsic film behaviour, was found to be similar in all cases and the elastic modulus determined from the stress response was also more or less identical. The three deposition temperatures were also not found to have a significant effect on the transformation characteristics of these films such as transformation start and finish temperatures, recovery stress and hysteresis.

Usefulness of in Situ Single Crystal to Single Crystal Transformation (SCSC) Studies in Understanding the Temperature-Dependent Dimensionality Cross-over and Structural Reorganization in Copper-Containing Metal-Organic Frameworks (MOFs)

Two copper-containing compounds [Cu(3)(mu(3)-OH)(2)-(H(2)O)(2){(SO(3))-C(6)H(3)-(COO)(2)}(CH(3)COO)] , I, and [Cu(5)(mu(3)-OH)(2)(H(2)O)(6){(NO(2))-C(6)H(3)-(COO)(2)}(4)]center dot 5H(2)O, II, were prepared using sulphoisophthalic and nitroisophthalic acids. The removal of the coordinated water molecules in the compounds was investigated using in situ single crystal to single crystal (SCSC) transformation studies, temperature-dependent powder X-ray diffraction (PXRD), and thermogravimetric analysis (TGA). The efficacy of SCSC transformation studies were established by the observation of dimensionality cross-over from a two-dimensional (I) to a three-dimensional structure, Cu(6)(mu(3)-OH)(4){(SO(3))-C(6)H(3)-(COO)(2)}(2)(CH(3)COO)(2), Ia, during the removal of the coordinated water molecules. Compound H exhibited a structural reorganization forming Cu(5)(mu(2)-OH)(2){(NO(2))C(6)H(3)-(COO)(2))(4)], Ha, possessing trimeric (Cu(3)O(12)) and dimeric (Cu(2)O(8)) copper clusters. The PXRD studies indicate that the three-dimensional structure (Ia) is transient and unstable, reverting back to the more stable two-dimensional structure (I) on cooling to room temperature. Compound Ha appears to be more stable at room temperature. The rehydration/dehydration studies using a modified TGA setup suggest complete rehydration of the water molecules, indicating that the water molecules in both compounds are labile. A possible model for the observed changes in the structures has been proposed. Magnetic studies indicate changes in the exchanges between the copper centers in Ha, whereas no such behavior was observed in Ia.

Influence of substrate temperature on the properties of oxygen‐ion‐assisted deposited CeO2 films

Substrate temperature and ion bombardment during deposition have been observed to modify significantly the optical and structural properties of dielectric thin films. Single‐layer films of CeO2 have been deposited by electron beam evaporation with simultaneous oxygen‐ion bombardment using a Kaufman broad beam ion source and maintaining the substrates at elevated temperature. A systematic study has been made on the influence of (a) substrate temperature in the range ambient to 300 °C, (b) ion energy in the range 300–700 eV, and (c) ion current density 100–220 μA/cm2 on optical properties such as refractive index, extinction coefficient, inhomogeneity, packing density, and structural properties. The refractive index increased with in increase in substrate temperature: ion energy up to 600 eV and ion current density. Homogeneous, absorption free and high index (2.48) films have been obtained at 600 eV, 220 μA/cm2 and at substrate temperature of 300 °C. The packing density of the films was observed to be unity for the same deposition conditions. Substrate temperature with simultaneous ion bombardment modified the structure of the films from highly ordered to fine grain structure.

Structure and temperature dependence of conductivity of Ag2.5Se‐Se composite

Rapid solidification of Ag‐53 at. % Se alloy resulted in the formation of a composite mixture of Ag2.5Se and Se. The microstructure consists of spherical Se grains of 2–20 μm size, randomly distributed in a matrix of Ag2.5 Se. The Se grains were found to be layered hexagonal while the Ag2.5 Se had an orthorhombic crystal structure. The unit cell size of this phase, however, was twice that reported for the equilibrium orthorhombic Ag2 Se compound. The conductivity σ variation with temperature in the range 80–320 K was found to be similar to that observed in degenerate semiconductors. The σ decreased from 295 Ω−1 cm−1 at room temperature to a saturation value of 70 Ω−1 cm−1 for temperatures <80 K. The results are discussed in terms of percolation conduction in the Ag2.5 Se phase.