Athermal colourless C-band optical transmitter for passive optical networks

A new control algorithm with reduced mode-hopping is demonstrated for uncooled WDM C-band channel generation from a DS-DBR laser with 100GHz spacing and low thermal drift up to 70°C. 10Gb/s external modulation with transmission over a 25km link is achieved. ©2010 IEEE.

Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors

The subthreshold slope, transconductance, threshold voltage, and hysteresis of a carbon nanotube field-effect transistor (CNT FET) were examined as its configuration was changed from bottom-gate exposed channel, bottom-gate covered channel to top-gate FET. An individual single wall CNT was grown by chemical vapor deposition and its gate configuration was changed while determining its transistor characteristics to ensure that the measurements were not a function of different chirality or diameter CNTs. The bottom-gate exposed CNT FET utilized 900 nm SiO2 as the gate insulator. This CNT FET was then covered with TiO2 to form the bottom-gate covered channel CNT FET. Finally, the top-gate CNT FET was fabricated and the device utilized TiO 2 (K ∼ 80, equivalent oxide thickness=0.25 nm) as the gate insulator. Of the three configurations investigated, the top-gate device exhibited best subthreshold slope (67-70 mV/dec), highest transconductance (1.3 μS), and negligible hysteresis in terms of threshold voltage shift. © 2006 American Institute of Physics.

An Approximate Method for Evaluating the Shear Band Thickness in Saturated Soils

formula for the thickness of a shear band formed in saturated soils under a simple shear or a combined stress state has been proposed. It is shown that the shear band thickness is dependent on the pore pressure properties of the material and the dilatancy rate, but is independent of the details of the combined stress state. This is in accordance with some separate experimental observations.

Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)

Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved.

Formation of adiabatic shear band in metal matrix composites

A modified single-pulse loading split Hopkinson torsion bar (SSHTB) is introduced to investigate adiabatic shear banding behavior in SiCp particle reinforced 2024 Al composites in this work. The experimental results showed that formation of adiabatic shear band in the composite with smaller particles is more readily observed than that in the composite with larger particles. To characterize this size-dependent deformation localization behavior of particle reinforced metal matrix composites (MMCp), a strain gradient dependent shear instability analysis was performed. The result demonstrated that high strain gradient provides a deriving force for the formation of adiabatic shear banding in MMCp. (C) 2004 Elsevier Ltd. All rights reserved.