Stress induced phase transition in a monomolecular perfluroalkylsilane film self assembled on aluminium surface

We control the stiffnesses of two dual double cantelevers placed in series to control penetration into a perflurooctyltrichlorosilane monolayer self assembled on aluminium and silicon substrates. The top cantilever which carries the probe is displaced with respect to the bottom cantilever which carries the substrate, the difference in displacement recorded using capacitors gives penetration. We further modulate the input displacement sinusoidally to deconvolute the viscoelastic properties of the monolayer. When the intervention is limited to the terminal end of the molecule there is a strong viscous response in consonance with the ability of the molecule to dissipate energy by the generation of gauche defects freely. When the intervention reaches the backbone, at a contact mean pressure of 0.2GPa the damping disappears abruptly and the molecule registers a steep rise in elastic modulus and relaxation time constant, with increasing contact pressure. We offer a physical explanation of the process and describe this change as due to a phase transition from a liquid like to a solid like state.

On the solution of the problem of scattering of surface water waves by a sharp discontinuity in the surface boundary conditions

Closed-form analytical expressions are derived for the reflection and transmission coefficients for the problem of scattering of surface water waves by a sharp discontinuity in the surface-boundary-conditions, for the case of deep water. The method involves the use of the Havelock-type expansion of the velocity potential along with an analysis to solve a Carleman-type singular integral equation over a semi-infinite range. This method of solution is an alternative to the Wiener-Hopf technique used previously.

Investigation of Surface Grooves from Migrating Grain Boundaries

Visible-light microscopy (VLM) and atomic-force microscopy (AFM) were used to study the progression of grain-boundary grooving and migration in high-purity alumina (Lucalox™). Groove profiles from the same grain boundaries were revisited using AFM following successive heat-treatments. The grooves measured from migrating grain boundaries were found to have asymmetric partial-angles compared to those measured from boundaries that did not migrate during the experiment. For a moving boundary, the grain with the larger partial-angle was consistently found to grow into the grain with the smaller partial-angle. Migrating boundaries were observed to leave behind remnant thermal grooves. The observations indicate that the boundary may be bowing out during the migration process.

Dewetting on the Surface of Rutile

After annealing a continuous SiO2 film on the (001) surface of TiO2, the film dewets and then spreads to form a complex pattern. The final droplet morphology displays a densely branching morphology similar to those seen in computer-simulated models. It is proposed that Bénard-Marangoni convection cells form within the film before dewetting occurs. The formation of Bénard-Marangoni convection cells prior to dewetting results in the uniform size and spacing of the droplets on the surface. These convection cells form at temperature when the TiO2 substrate dissolves into the SiO2 thin film. The change in composition results in regions of differing surface tensions and therefore leads to the formation of the convection cells.

Reduction of oxygen impurity at GaN/beta-Si(3)N(4)/Si interface via SiO(2) to Ga(2)O conversion by exposing of Si surface under Ga flux

The removal of native oxide from Si (1 1 1) surfaces was investigated by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectra (SIMS) depth profiles. Two different oxide removal methods, performed under ultrahigh-vacuum (UHV) conditions, were carried out and compared. The first cleaning method is thermal desorption of oxide at 900 degrees C. The second method is the deposition of metallic gallium followed by redesorption. A significant decrease in oxygen was achieved by thermal desorption at 900 degrees C under UHV conditions. By applying a subsequent Ga deposition/redesorption, a further reduction in oxygen could be achieved. We examine the merits of an alternative oxide desorption method via conversion of the stable SiO(2) surface oxide into a volatile Ca(2)O oxide by a supply of Ga metals. Furthermore, ultra thin films of pure silicon nitride buffer layer were grown on a Si (1 1 1) surface by exposing the surface to radio-frequency (RF) nitrogen plasma followed by GaN growth. The SIMS depth profile shows that the oxygen impurity can be reduced at GaN/beta-Si(3)N(4)/Si interfaces by applying a subsequent Ga deposition/redesorption. (C) 2011 Elsevier B.V. All rights reserved.

Influence of growth parameters on the surface morphology and crystallinity of InSb epilayers grown by liquid phase epitaxy

Unintentionally doped homoepitaxial InSb films have been grown by liquid phase epitaxy employing ramp cooling and step cooling growth modes. The effect of growth temperature, degree of supercooling and growth duration on the surface morphology and crystallinity were investigated. The major surface features of the grown film like terracing, inclusions, meniscus lines, etc are presented step-by-step and a variety of methods devised to overcome such undesirable features are described in sufficient detail. The optimization of growth parameters have led to the growth of smooth and continuous films. From the detailed morphological, X-ray diffraction, scanning electron microscopic and Raman studies, a correlation between the surface morphology and crystallinity has been established.