High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

The photoluminescence efficiency of GaAsSb-capped InAs/GaAs type II quantum dots (QDs) can be greatly enhanced by rapid thermal annealing while preserving long radiative lifetimes which are ∼20 times larger than in standard GaAs-capped InAs/GaAs QDs. Despite the reduced electron-hole wavefunction overlap, the type-II samples are more efficient than the type-I counterparts in terms of luminescence, showing a great potential for device applications. Strain-driven In-Ga intermixing during annealing is found to modify the QD shape and composition, while As-Sb exchange is inhibited, allowing to keep the type-II structure. Sb is only redistributed within the capping layer giving rise to a more homogeneous composition.

Analysis of the modified optical properties and band structure of GaAs12xSbx-capped InAs/GaAs quantum dots

The origin of the modified optical properties of InAs/GaAs quantum dots (QD) capped with a thin GaAs1−xSbx layer is analyzed in terms of the band structure. To do so, the size, shape, and composition of the QDs and capping layer are determined through cross-sectional scanning tunnelling microscopy and used as input parameters in an 8 × 8 k·p model. As the Sb content is increased, there are two competing effects determining carrier confinement and the oscillator strength: the increased QD height and reduced strain on one side and the reduced QD-capping layer valence band offset on the other. Nevertheless, the observed evolution of the photoluminescence (PL) intensity with Sb cannot be explained in terms of the oscillator strength between ground states, which decreases dramatically for Sb > 16%, where the band alignment becomes type II with the hole wavefunction localized outside the QD in the capping layer. Contrary to this behaviour, the PL intensity in the type II QDs is similar (at 15 K) or even larger (at room temperature) than in the type I Sb-free reference QDs. This indicates that the PL efficiency is dominated by carrier dynamics, which is altered by the presence of the GaAsSb capping layer. In particular, the presence of Sb leads to an enhanced PL thermal stability. From the comparison between the activation energies for thermal quenching of the PL and the modelled band structure, the main carrier escape mechanisms are suggested. In standard GaAs-capped QDs, escape of both electrons and holes to the GaAs barrier is the main PL quenching mechanism. For small-moderate Sb (<16%) for which the type I band alignment is kept, electrons escape to the GaAs barrier and holes escape to the GaAsSb capping layer, where redistribution and retraping processes can take place. For Sb contents above 16% (type-II region), holes remain in the GaAsSb layer and the escape of electrons from the QD to the GaAs barrier is most likely the dominant PL quenching mechanism. This means that electrons and holes behave dynamically as uncorrelated pairs in both the type-I and type-II structures.

Gas discharges for continental Spain: geochemical and isotopic features

In this work the results of a geochemical and isotopic survey of 37 gas discharges was carried out in continental Spain are presented and discussed. On the basis of the gas chemical composition, four different areas can be distinguished, as follows: 1) Selva-Emborda (SE) region; 2) Guadalentin Valley (GV); 3) Campo de Calatrava (CC) and 3) the inner part of Spain (IS). The SE, GV and CC areas are characterized by CO2-rich gases, while IS has N2 as main gas compound. The CO2-rich gases can be distinguished at their turn on the basis on the helium and carbon isotopic composition. The SE and CC areas have a strong mantle signature (up to 3 Ra). Nevertheless, the carbon isotopic composition of CC is within the mantle range and that of SE is slightly more negative (down to -8‰ PDB). The GV gases have a lower mantle signature (61 Ra) with respect to SE and CC and more negative carbon isotopes (6-10‰ PDB). It is worth to mention that the SE, GV and CC areas are related to the youngest volcanic activity in continental Spain, for example the Garrotxa Volcanic Field in Catalonia records the latest event dated at 10,000 years, and the isotopic features, particularly those of helium, are suggesting the presence of magmatic bodies still cooling at depth. The N2-rich gases, i.e. those from the IS area, has an atmospheric origin, as highlighted by the N2/Ar ratio that ranges between those of air and ASW (Air Saturated Water). The isotopic composition of carbon is distinctly negative (down to -21‰ PDB) and that of helium is typically crustal (0.02-0.08 Ra), confirming that these gas discharges are related to a relatively shallow source.

Ion acceleration in underdense plasmas by ultra-short laser pulses

We report on the ion acceleration mechanisms that occur during the interaction of an intense and ultrashort laser pulse ( λ > μ I 2 1018 W cm−2 m2) with an underdense helium plasma produced from an ionized gas jet target. In this unexplored regime, where the laser pulse duration is comparable to the inverse of the electron plasma frequency ωpe, reproducible non-thermal ion bunches have been measured in the radial direction. The two He ion charge states present energy distributions with cutoff energies between 150 and 200 keV, and a striking energy gap around 50 keV appearing consistently for all the shots in a given density range. Fully electromagnetic particle-in-cell simulations explain the experimental behaviors. The acceleration results from a combination of target normal sheath acceleration and Coulomb explosion of a filament formed around the laser pulse propagation axis