OXYGEN IN INXGA1-XASYP1-Y GROWN ON GAAS

The measurement of DLTS on the alloy InxGa1-xAsyP1-y (0 less-than-or-equal-to y less-than-or-equal-to 0.3; 0.5 greater-than-or-equal-to x greater-than-or-equal-to 0.35) shows a new signal, labeled as E2, with an activation energy of E(c) - 0.61 eV and the SIMS signals show a large number of oxygen. To clarify is further, the energy of the deep level E2 is quantitatively calculated by using Vogl's tight-binding theory and Hjalmarson's deep level theory. As a result, the deep A1-symmetric level associated with an oxygen on the anion site of InxGa1-xAsyP1-y locates deeply in the band gap. Thus, the level E2 is considered to be induced by the oxygen impurity.

INTERFACIAL REACTIONS IN THE CO/SI/GAAS AND SI/CO/GAAS SYSTEMS

The interfacial reactions between thin films of cobalt and silicon and (100)-oriented GaAs substrates in two configurations, Co/Si/GaAs and Si/Co/GaAs, were studied using a variety of techniques including Auger electron spectroscopy, x-ray diffraction, and transmission electron microscopy. The annealing conditions were 200, 300, 400, 600-degrees-C for 30 min, and rapid thermal annealing for 15 s. It was found that Si layer in the Co/Si/GaAs system acts as a barrier at the interface between Co and GaAs when annealed up to 600-degrees-C. The interfacial reaction between Co and Si is faster than that between Co and GaAs in the system of Si/Co/GaAs. The sequence of compound formation for the two metallizations studied (Co/Si/GaAs and Si/Co/GaAs) depends strongly on the sample configuration as well as the layer thickness of Si and Co (Co/Si atomic ratio). From our results, it is promising to utilize Co/Si/GaAs multilayer film structure to make a CoSi2/GaAs contact, and this CoSi2 may offer an alternative to the commonly used W silicides as improved gate metallurgies in self-aligned metal-semiconductor field effect transistor (MESFET) technologies.

CBE GROWTH OF GAAS/GAAS, GAAS/SI AND ALGAAS/GAAS USING TEG, ASH3 AND AMINE-ALANE PRECURSORS

The growth of high quality AlGaAs by CBE bas been limited by the high levels of carbon and oxygen contamination. The use of alane based precursors offers a significant reduction in such contamination. We report for the first time the CBE growth of AlxGa1-xAs from triethylgallium, dimethylethylamine-alane and arsine, and compare with. growth from triethylgallium, trimethylamine-alane and arsine. Some preliminary results of work on the CBE growth of GaAs on silicon will also be reported.

REDUCTION OF CRYSTALLINE DISORDER IN MOLECULAR-BEAM EPITAXY GAAS ON SI BY MEV ION-IMPLANTATION AND SUBSEQUENT ANNEALING

Molecular beam epitaxy GaAs films on Si, with thicknesses ranging from 0.9-2.0-mu-m, were implanted with Si ions at 1.2-2.6 MeV to doses in the range 10(15)-10(16) cm-2. Subsequent rapid infrared thermal annealing was carried out at 850-degrees-C for 15 s in a flowing N2 atmosphere. Crystalline quality was analyzed by using Rutherfold backscattering/channeling technique and Raman scattering spectrometry. The experimental results show that the recrystallization process greatly depends on the dose and energy of implanted ions. Complete recrystallization with better crystalline quality can be obtained under proper implantation and subsequent annealing. In the improved layer the defect density was much lower than in the as-grown layer, especially near the interface.

PRELIMINARY-RESULTS OF GAAS SINGLE-CRYSTAL GROWTH UNDER HIGH GRAVITY CONDITIONS

GaAs single crystals have been grown under high gravity conditions, up to 9g0, by a recrystallization method with decreasing temperature. The impurity striations in GaAs grown under high gravity become weak and indistinct with smaller striation spacings. The dislocation density of surcharge-grown GaAs increases with increase of centrifugal force. The cathodoluminescence results also show worse perfection in the GaAs grown at high gravity than at normal earth gravity.

SOME ASPECTS ON INTERFACE MODES AND LO EIGENMODES IN GAAS/ALAS QUANTUM-WELLS

The interface modes and LO phonon modes in GaAs/AlAs quantum wells is investigated within the isotropic dispersionless dielectric continuum with nodes in displacement u at the interfaces as boundary condition. The interface modes are found to be purely interface polarization charge effect while LO eigenmodes induce only bulk polarization charges. Analytical expression is determined for LO eigenmodes and is found in good agreement with realistic model calculation, and its labeling index is interpreted as the helicity of electric field as it travels from one side to the other side of the slab.

PHOTOLUMINESCENCE STUDIES OF INXGA1-XAS/GAAS STRAINED QUANTUM-WELLS UNDER HYDROSTATIC-PRESSURE

The photoluminescence from InxG1-xAs/GaAs strained quantum wells with thickness from 30 to 160 angstrom have been studied at 77 K under hydrostatic pressure up to 60 kbar. It was found that the pressure coefficients of the exciton peaks corresponding to transitions from the first conduction subband to the heavy-hole subband increased with reduced well width, in contrast to the case of GaAs/AlxGa1-xAs quantum wells. Calculations revealed that the increased barrier height with pressure was the major cause of the change in the pressure coefficients. Two peaks related to indirect transitions were observed at pressures higher than 50 kbar. They are attributed to type-I transitions from the lowest conduction-band edge, which are the strain splitted X(xy) valleys, to the heavy-hole subband in the InxGa1-xAs well.

EXTREMELY LOW THRESHOLD CURRENT, BURIED-HETEROSTRUCTURE STRAINED INGAAS GAAS MULTIQUANTUM WELL LASERS

A very low CW threshold current of 1.65 mA at room temperature was obtained for an uncoated buried-heterostructure strained layer multiquantum well InGaAs-GaAs laser fabricated using hybrid molecular beam epitaxy and liquid phase epitaxy crystal growth technique. External differential quantum efficiency as high as 44.6% (0.53 mW/mA) and output power of more than 30 mW per facet were achieved in the same laser.

NEAR-RESONANCE RAMAN-SCATTERING OF LONGITUDINAL OPTICAL PHONON MODES AND INTERFACE MODES IN GAAS/ALAS SUPERLATTICES

The near-resonance Raman scattering of GaAs/AlAs superlattices is investigated at room temperature. Owing to the resonance enhancement of Frohlich interaction, the scattering intensity of even LO confined modes with A1 symmetry becomes much stronger than that of odd modes with B2 symmetry. The even modes were observed in the polarized spectra, while the odd modes appear in the depolarized spectra as in the off-resonance case. The second-order Raman spectra show that the polarized spectra are composed of the overtone and combinations of even modes, while the depolarized spectra are composed of the combinations of one odd mode and one even mode. The results agree well with the selection rules predicted by the microscopic theory of Raman scattering in superlattices, developed recently by Huang and co-workers. In addition, the interface modes and the combinations of interface modes and confined modes are also observed in the two configurations.

OPTICAL BISTABILITY IN A GAAS/GAALAS MULTI-QUANTUM-WELL (MQW) SELF-ELECTROOPTIC EFFECT DEVICE (SEED)

Based on a GaAs/GaAlAs MQW pin structure grown by a home-made MBE system, we have successfully fabricated a SEED. The optical bistability and related properties of the device under symmetric operation (S-SEED) and asymmetric operation are reported.

PRESSURE BEHAVIOR OF INXGA1-XAS/GAAS STRAINED QUANTUM-WELLS WITH DIFFERENT WIDTHS

The photoluminescence of InxGa1-xAs/GaAs strained quantum wells with widths of 30 angstrom to 160 angstrom have been studied at 77 K under hydrostatic pressure up to 60 kbar. It is found that the pressure coefficients of exciton peaks from 1st conduction subband to heavy hole subband increase from 9.74 meV/kbar for a 160 angstrom well to 10.12 meV/kbar for a 30 angstrom well. The calculation based on the Kronig-Penney model indicated that the extension of the electronic wave function to the barrier layer in the narrow wells is one of the reasons for the increase of the pressure coefficients with the decrease of well width. Two peaks related to indirect transitions were observed at pressures higher than 50 kbar.

INVESTIGATION OF GAAS/SI MATERIAL BY X-RAY DOUBLE-CRYSTAL DIFFRACTION

GaAs epilayer films on Si substrates grown by molecular-beam epitaxy were investigated by the x-ray double-crystal diffraction method. The rocking curves were recorded for different diffraction vectors of samples. The results show that the unit-cell volumes of GaAs epilayers are smaller than that of the GaAs bulk material. The strained-layer superlattice buffer layer can improve the quality of the film, especially in the surface lamella. The parameter W' = W(expt)/(square-root \gamma-h\/gamma-0/sin 2-theta-B) is introduced to describe the quality of different depths of epilayers. As the x-ray incident angle is increased, W' also increases, that is, the quality of the film deteriorates with increasing penetration distance of the x-ray beam. Therefore, W' can be considered as a parameter that describes the degree of perfection of the epilayer along the depth below the surface. The cross-section transmission electron microscopy observations agree with the results of x-ray double-crystal diffraction.

GAAS/GAALAS GRADED INDEX SEPARATE CONFINEMENT SINGLE QUANTUM-WELL SINGLE-MODE WAVE-GUIDE ELECTROABSORPTION LIGHT-MODULATOR

A GaAs/GaAlAs graded-index separate confinement single quantum well heterostructure single-mode ridge waveguide electroabsorption modulator was fabricated and investigated. For the modulator with a quantum well width of 100 angstrom and device length of 700-mu-m, an on/off ratio of 29.7 dB and estimated absorption insertion loss of 3 dB were obtained for TE polarised light with wavelength 8650 angstrom, and for TM polarisation the on/off ratio was 28.5 dB. With a switching voltage of 1 V, an on/off ratio of 15 dB was achieved. Photocurrent spectra exhibited a red shift of 600 angstrom of the absorption edge when the voltage applied to the PIN diode was varied from 0.5 to -7 V. The corresponding shift of the room temperature exciton peak energy was 96 meV.

1ST PRINCIPLE CALCULATIONS OF QUASI-PARTICLE ENERGIES FOR BAND STRUCTURES OF SI AND GAAS

We have applied the Green function theory in GW approximation to calculate the quasiparticle energies for semiconductors Si and GaAs. Good agreements of the calculated excitation energies and fundamental energy gaps with the experimental band structures were achieved. We obtained the calculated fundamental gaps of Si and GaAs to be 1.22 and 1.42 eV in comparison to the experimental values of 1.17 and 1.52 eV, respectively. Ab initio pseudopotential method has been used to generate basis wavefunctions and charge densities for calculating dielectric matrix elements and electron self-energies.

IMPLANTATION ENERGY SELECTION IN MOLECULAR-BEAM EPITAXY GAAS FILMS ON SI SUBSTRATES

GaAs films made by molecular beam epitaxy with thicknesses ranging from 0.9 to 1.25-mu-m on Si have been implanted with Si ions at 1.2 MeV to dose of 1 x 10(15)/cm2. A rapid infrared thermal annealing and white light annealing were then used for recrystallization. Crystalline quality was analysed by using backscattering channeling technique with Li ion beam of 4.2 MeV. The experimental results show that energy selection is important for obtaining better and uniform recrystallized GaAs epilayers.