Kinetic Assessment of Measured Mass Flow Rates and Streamwise Pressure Distributions in Microchannel Gas Flows

Measured mass flow rates and streamwise pressure distributions of gas flowing through microchannels were reported by many researchers. Assessment of these data is crucial before they are used in the examination of slip models and numerical schemes, and in the design of microchannel elements in various MEMS devices. On the basis of kinetic solutions of the mass flow rates and pressure distributions in microchannel gas flows, the measured data available are properly normalized and then are compared with each other. The 69 normalized data of measured pressure distributions are in excellent agreement, and 67 of them are within 1 +/- 0.05. The normalized data of mass flow-rates ranging between 0.95 and 1 agree well with each other as the inlet Knudsen number Kn (i) < 0.02, but they scatter between 0.85 and 1.15 as Kn (i) > 0.02 with, to some extent, a very interesting bifurcation trend.

Properties of a-C:H films deposited from a methane electron cyclotron wave resonant plasma

An electron cyclotron wave resonant methane plasma discharge was used for the high rate deposition of hydrogenated amorphous carbon (a-C:H). Deposition rates of up to ∼400 Å/min were obtained over substrates up to 2.5 in. in diameter with a film thickness uniformity of ∼±10%. The deposited films were characterised in terms of their mass density, sp3 and hydrogen contents, C-H bonding, intrinsic stress, scratch resistance and friction properties. The deposited films possessed an average sp3 content, mass density and refractive index of ∼58%, 1.76 g/cm3 and 2.035 respectively.Mechanical characterisation indicated that the films possessed very low steady-state coefficients of friction (ca. 0.06) and a moderate shear strength of ∼141 MPa. Nano-indentation measurements also indicated a hardness and elastic modulus of ∼16.1 and 160 GPa respectively. The critical loads required to induce coating failure were also observed to increase with ion energy as a consequence of the increase in degree of ion mixing at the interface. Furthermore, coating failure under scratch test conditions was observed to take place via fracture within the silicon substrate itself, rather than either in the coating or at the film/substrate interface. © 2003 Elsevier B.V. All rights reserved.

Ultrasensitive mass balance based on a bulk acoustic mode single-crystal silicon resonator

A single-crystal silicon resonant bulk acoustic mass sensor with a measured resolution of 125 pg cm2 is presented. The mass sensor comprises a micromachined silicon plate that is excited in the square-extensional bulk acoustic resonant mode at a frequency of 2.182 MHz, with a quality factor exceeding 106. The mass sensor has a measured mass to frequency shift sensitivity of 132 Hz cm2 μg. The resonator element is embedded in a feedback loop of an electronic amplifier to implement an oscillator with a short term frequency stability of better than 7 ppb at an operating pressure of 3.8 mTorr. © 2007 American Institute of Physics.