HYDROGENATED AMORPHOUS SILICON THIN-FILM DEPOSITION BY DIRECT PHOTO-ENHANCED DECOMPOSITION OF SILANE USING AN INTERNAL HYDROGEN DISCHARGE LAMP.

Hydrogenated amorphous silicon (a-Si:H) thin films have been deposited from silane using a novel photo-enhanced decomposition technique. The system comprises a hydrogen discharge lamp contained within the reaction vessel; this unified approach allows high energy photon excitation of the silane molecules without absorption by window materials or the need for mercury sensitisation. The film growth rates (exceeding 4 Angstrom/s) and material properties obtained are comparable to those of films produced by plasma-enhanced CVD techniques. The reduction of energetic charged particles in the film growth region should enable the fabrication of cleaner semiconductor/insulator interfaces in thin-film transistors.

A unified circuit model for the polysilicon thin film transistor

This paper describes a unified approach to modelling the polysilicon thin film transistor (TFT) for the purposes of circuit design. The approach uses accurate methods of predicting the channel conductance and then fitting the resulting data with a polynomial. Two methods are proposed to find the channel conductance: a device model and measurement. The approach is suitable because the TFT does not have a well defined threshold voltage. The polynomial conductance is then integrated generally to find the drain current and channel charge, necessary for a complete circuit model. © 1991 The Japan Society of Applied Physics.

Correlation between density of states distributions and the fermi level position in interfacial regions of amorphous silicon thin film transistors

This paper investigates the variation of the integrated density of states with conduction activation energy in hydrogenated amorphous silicon thin film transistors. Results are given for two different gate insulator layers, PECVD silicon oxide and thermally grown silicon dioxide. The different gate insulators produce transistors with very different initial transfer characteristics, but the variation of integrated density of states with conduction activation energy is shown to be similar.