Deposition and characterisation of ultralow-stress ZnO thin films for application in FBAR-based gravimetric biosensors

Zinc oxide (ZnO) thin films were deposited at high rates ( > 50 nm min-1) using a unique technique known as high target utilisation sputtering (HiTUS). The films obtained possess good crystallographic orientation, low surface roughness, very low stress and excellent piezoelectric properties. We have utilised the films to develop highly sensitive biosensors based on thickness longitudinal mode (TLM) thin film bulk acoustic resonators (FBARs). The FBARs have the fundamental TLM at a frequency near 1.5 GHz and quality factor Q higher than 1,000, which is one of the largest values ever reported for ZnO-based FBARs. Bovine Serum Albumin (BSA) solutions with different concentrations were placed on the top of different sets of identical FBARs and their responses to mass-loading from physically adsorbed protein coatings were investigated. These resonators demonstrated a high sensitivity and thus have a great potential as gravimetric sensors for biomedical applications. © 2011 Inderscience Enterprises Ltd.

Flux line lattice structure and behavior in antiphase boundary free vicinal YBa2Cu3O7-delta thin films

Field angle dependent critical current, magneto-optical microscopy and high resolution electron microscopy studies have been performed on YBa2Cu3O7-delta thin films grown on miscut substrates. High resolution electron microscopy images show that the films studied exhibited clean epitaxial growth with a low density of antiphase boundaries and stacking faults. Any antiphase boundaries (APBs) formed near the film substrate interface rapidly healed rather than extending through the thickness of the film. Unlike vicinal films grown on annealed substrates, which contain a high density of antiphase boundaries, magneto-optical imaging showed no filamentary flux penetration in the films studied. The flux penetration is, however, asymmetric. This is associated with intrinsic pinning of flux strings by the tilted a-b planes and the dependence of the pinning force on the angle between the local field and the a-b planes. Field angle dependent critical current measurements exhibited the striking vortex channeling effect previously reported in vicinal films. By combining the results of three complementary characterization techniques it is shown that extended APB free films exhibit markedly different critical current behavior compared to APB rich films. This is attributed to the role of APB sites as strong pinning centers for Josephson string vortices between the a-b planes. (C) 2003 American Institute of Physics.

Ultrafast sputtered ZnO thin films with high kT for acousticwave device applications

The fabrication of high frequency acoustic wave devices requires thedevelopment of thin films of piezoelectric materials with improved morphologicaland electro-acoustical properties. In particular, the crystalline orientationof the films, surface morphology, film stress and electrical resistivity are keyissues for the piezoelectric response. In the work reported here, ZnO thinfilms were deposited at high rates (>50 nm/min) using a novel process knownas the High Target Utilisation Sputtering (HiTUS). The films deposited possessexcellent crystallographic orientation, high resistivity (>109ωm), and exhibit surface roughness and film stress one order of magnitudelower than films grown with standard magnetron sputtering. The electromechanicalcoupling coefficient of the films, kT, was precisely calculated byimplementing the resonant spectrum method, and was found to be at least 6%higher than any previously reported kT of magnetron sputtered filmsto the Authors' knowledge. The low film stress of the film is deemed as one ofthe most important factors responsible for the high k T valueobtained. © 2010 IEEE.