电吸收调制器和DFB激光器集成器件的测量

提出了一种测量电吸收调制器和激光器集成器件芯片散射参数的新方法。根据电吸收调制器和封装寄生参数的等效电路模型，对测量的反射系数进行拟合，得到封装寄生参数和电吸收调制器的等效电路元件的参数值。通过分析发现测试封装寄生参数对电吸收调制器的测试结果有很大影响。去除了封装寄生参数的影响后，得到了调制器的反射和传输参数的真实频响特性。

1.55μm Fabry-Perot Thermo-Optical Tunable Filter with amorphous-Si as Cavity

A 1.55μm Fabry-Perot (F-P) thermo-optical tunable filter is fabricated. The cavity is made of amorphous silicon (a-Si) layer grown by electron-beam evaporation technique. Due to the excellent thermo-optical property of a-Si, the refractive index of the F-P cavity will be changed by heating; the transmittance resonant peak will therefore shift substantially. The measured tuning range is 12nm, FWHM (full-width-at-half-maximum) of the transmission peak is 9nm, and heating efficiency is 0.1K/mW. The large FWHM is mainly due to the non-ideal coating deposition and mirror undulation. Possible improvements to increase the efficiency of heating are suggested.

在解复用模块设计中有效折射率变化的研究

研究了基于SOI（silicon-on-insulator）材料的阵列波导光栅（AWG）分波器件，给出了此器件材料色散的数值拟合公式，进而利用BPM方法研究了材料色散脊型波导结构变化和器件制做中刻蚀深度误差对波导有效折射率和波分复用模块性能的影响。结果表明，刻蚀深度误差对模块性能优劣起关键作用。

Measurement of Cavity Loss and Quasi-Fermi-Level Separation for Fabry-Perot Semiconductor Lasers

A fitting process is used to measure the cavity loss and the quasi-Fermi-level separation for Fabry- Perot semiconductor lasers. From the amplified spontaneous emission (ASE) spectrum, the gain spectrum and single-pass ASE obtained by the Cassidy method are applied in the fitting process. For a 1550nm quantum well InGaAsP ridge waveguide laser, the cavity loss of about ～24cm~(-1) is obtained.

Si基高速为OEIC光接收机芯片的研究

Si基光电子集成（OEIC）光接收机在光通信系统接入网、光互连、光存储等方面有着广泛的应用前景。本文综述Si基OEIC光接收芯片的研究现状，分析了其发展趋势，探讨了进一步提高性能的途径。

10*10nGaAsP/InP阵列波导光栅器件的研制

研制了脊形波导结构的10*10InGaAsP/InP阵列波导光栅器件（AWG），并采用掺饵光纤放大器（EDFA）作宽带光源测量了AWG的近场图以及分光特性。