Scattering Behaviour of fractal based metallo-dielectric structures

The scattering behaviour of fractal based metallodielectric structures loaded over metallic targets of different shapes such as flat plate, cylinder and dihedral corner reflector are investigated for both TE and TM polarizations of the incident wave. Out of the various fractal structures studied,square Sierpinski carpet structure is found to give backscattering reduction for an appreciable range of frequencies. The frequency of minimum backscattering depends on the geometry of the structure as well as on the thickness of the substrate. This structure when loaded over a dihedral corner reflector is showing an enhancement in RCS for corner angles other than 90◦.

Dielectric studies of polyvinyl-acetate-based phantom for applications in microwave medical imaging

Phantoms that exhibit complex dielectric properties similar to low water content biological tissues over the electromagnetic spectrum of 2–3 GHz have been synthesized from carbon black powder, graphite powder and polyvinyl-acetate-based adhesive. The materials overcome various problems that are inherent in conventional phantoms such as decomposition and deterioration due to the invasion of bacteria or mold. The absorption coefficients of the materials for various compositions of carbon black and graphite powder are studied. A combination of 50% polyvinylacetate- based adhesive, 20% carbon black powder and 30% graphite powder exhibits high absorption coefficient, which suggests another application of the material as good microwave absorber for interior lining of tomographic chamber in microwave imaging. Cavity perturbation technique is adopted to study the dielectric properties of the material.

Radar cross-section enhancement of dihedral corner reflector using fractal-based metallo-dielectric structures

Effective use of fractal-based metallo-dielectric structures for enhancing the radar cross-section (RCS) of dihedral corner reflectors is reported. RCS enhancement of about 30 dBsm is obtained for corner reflectors with corner angles other than 90deg. This may find application in remote sensing and synthetic aperture radar.

Development and Analysis of a Novel Isosceles Trapezoidal Dielectric Resonator Antenna For Wireless Communication

This thesis describes the development and analysis of an Isosceles Trapezoidal Dielectric Resonator Antenna (ITDRA) by realizing different DR orientations with suitable feed configurations enabling it to be used as multiband, dual band dual polarized and wideband applications. The motivation for this work has been inspired by the need for compact, high efficient, low cost antenna suitable for multi band application, dual band dual polarized operation and broadband operation with the possibility of using with MICs, and to ensure less expensive, more efficient and quality wireless communication systems. To satisfy these challenging demands a novel shaped Dielectric Resonator (DR) is fabricated and investigated for the possibility of above required properties by trying out different orientations of the DR on a simple microstrip feed and with slotted ground plane as well. The thesis initially discusses and evaluates recent and past developments taken place within the microwave industry on this topic through a concise review of literature. Then the theoretical aspects of DRA and different feeding techniques are described. Following this, fabrication and characterization of DRA is explained. To achieve the desired requirements as above both simulations and experimental measurements were undertaken. A 3-D finite element method (FEM) electromagnetic simulation tool, HFSSTM by Agilent, is used to determine the optimum geometry of the dielectric resonator. It was found to be useful in producing approximate results although it had some limitations. A numerical analysis technique, finite difference time domain (FDTD) is used for validating the results of wide band design at the end. MATLAB is used for modeling the ITDR and implementing FDTD analysis. In conclusion this work offers a new, efficient and relatively simple alternative for antennas to be used for multiple requirements in the wireless communication system.

Effect of mechanical milling on the structural, magnetic and dielectric properties of coprecipitated ultrafine zinc ferrite

Nanosized ZnFe2O4 particles containing traces of a-Fe2O3 by intent were produced by low temperature chemical coprecipitation methods. These particles were subjected to high-energy ball milling. These were then characterised using X-ray diffraction, magnetisation and dielectric studies. The effect of milling on zinc ferrite particles have been studied with a view to ascertaining the anomalous behaviour of these materials in the nanoregime. X-ray diffraction and magnetisation studies carried out show that these particles are associated with strains and it is the surface effects that contribute to the magnetisation. Hematite percentage, probably due to decomposition of zinc ferrite, increases with milling. Dielectric behaviour of these particles is due to interfacial polarisation as proposed by Koops. Also the defects caused by the milling produce traps in the surface layer contributes to dielectric permittivity via spin polarised electron tunnelling between grains. The ionic mechanism is enhanced in dielectrics with the rise in temperature which results in the increase of dielectric permittivity with temperature.

Thermal transport properties of selected ferroelectrics, mixed valance perovskites and dielectric ceramics using photopyroelectric technique

Photothermal spectroscopy is a group of high sensitivity methods used to measure optical absorption and thermal characteristics of a sample.The basis of photothermal spectroscopy is a photo-induced change in the thermal state of the sample.Light energy absorbed and not lost by subsequent emission results in sample heating.This heating results in a temperature change as well as changes in thermodynamic parameters of the sample which are related to temperature.Measurements of the temperature,pressure,or density changes that occur due to optical absorption are ultimately the basis for the photothermal spectroscopic methods.This is a more direct measure of optical absorption than optical transmission based spectroscopies.Sample heating is a direct consequence of optical absorption and so photothermal spectroscopy signals are directly dependent on light absorption.Scattering and reflection losses do not produce photothermal signals.Subsequently,photothermal spectroscopy more accurately measures optical absorption in scattering solutions,in solids,and at interfaces.This aspect makes it particularly attractive for application to surface and solid absorption studies,and studies in scattering media.

Development of a Novel Wideband Cylindrical Dielectric Resonator Antenna

The author presents the development of a new dielectric resonator antenna(DRA) suitable for wideband wireless communication applications.The design comprises of a simple cylindrical dielectric resonator (DR) and a microstrip feed, in a low radiation-Q structure,enabling wide impedance bandwidth.The radiation pattern is conical shaped,resulted from thew low-Q structure.Dielectric constant of the DR,its dimensions and topological parameters of the feed line are the major design parameters of the antenna.By proper selection of these parameters,the DRA can be operated over a wideband width covering multiple wireless applications.The antenna is simulated using Ansoft HFSS TM and measured using HP 8510C vector network analyser.Some of the measured results are confirmed by using the Finite Difference Time Domain(FDTD) technique implemented in MATLAB.

Strip-loaded hollow dielectric H-plane sectoral horn antennas for square radiation pattern

The radiation characteristics of a new type of hollow dielectric H-plane sectoral horn antenna are presented. Metallic strips of optimum length are loaded on the H-walls of the sectoral horns. The effects of strip loading for producing square patterns in the H plane are discussed.

Dielectric properties of certain biological materials at microwave frequencies.

In the medical field, microwaves play a larger role for treatment than diagnosis. For the detection of diseases by microwave methods, it is essential to know the dielectric properties of biological materials. For the present study, a cavity perturbation technique was employed to determine the dielectric properties of these materials. Rectangular cavity resonators were used to measure the complex permittivity of human bile, bile stones, gastric juice and saliva. The measurements were carried out in the S and J bands. It is observed that normal and infected bile have different dielectric constant and loss tangent. Dielectric constant of infected bile and gastric juice varies from patient to patient. Detection and extraction of bile stone with possible method of treatment is also discussed.

Dielectric properties of ionomers at microwave frequencies

Ionic polymers (ionomers) with interesting characteristics are emerging as important commercial polymers. Ionomers have the unique ability to behave as cross-linked materials at ambient temperatures and to melt and flow at elevated temperatures like thermoplastics. The complex permittivity and conductivity of a class of ionomers at microwave frequencies are determined using the cavity perturbation technique and the results are presented.

Preparation and Characterization ofHigh-k Aluminum Oxide Thin Films by Atomic Layer Deposition for Gate Dielectric Applications

Present work deals with the Preparation and characterization of high-k aluminum oxide thin films by atomic layer deposition for gate dielectric applications.The ever-increasing demand for functionality and speed for semiconductor applications requires enhanced performance, which is achieved by the continuous miniaturization of CMOS dimensions. Because of this miniaturization, several parameters, such as the dielectric thickness, come within reach of their physical limit. As the required oxide thickness approaches the sub- l nm range, SiO 2 become unsuitable as a gate dielectric because its limited physical thickness results in excessive leakage current through the gate stack, affecting the long-term reliability of the device. This leakage issue is solved in the 45 mn technology node by the integration of high-k based gate dielectrics, as their higher k-value allows a physically thicker layer while targeting the same capacitance and Equivalent Oxide Thickness (EOT). Moreover, Intel announced that Atomic Layer Deposition (ALD) would be applied to grow these materials on the Si substrate. ALD is based on the sequential use of self-limiting surface reactions of a metallic and oxidizing precursor. This self-limiting feature allows control of material growth and properties at the atomic level, which makes ALD well-suited for the deposition of highly uniform and conformal layers in CMOS devices, even if these have challenging 3D topologies with high aspect-ratios. ALD has currently acquired the status of state-of-the-art and most preferred deposition technique, for producing nano layers of various materials of technological importance. This technique can be adapted to different situations where precision in thickness and perfection in structures are required, especially in the microelectronic scenario.

Elecrical conduction and dielectric behaviour of thin films of vacuum evaporated amorphous silicon, hydrogenated amorphous silicon and chemically deposited cadmium sulphide

A brief account of the several methods used for the production of thin films is presented in this Chapter. The discussions stress on the important methods used for the fabrication of a-si:H thin films. This review' also reveals ‘that almost all the general methods, like vacuum evaporation, sputtering, glow discharge and even chemical methods are currently employed for the production of a-Si:H thin films. Each method has its own advantages and disadvantages. However, certain methods are generally preferred. Subsequently a detailed account of the method used here for the preparation of amorphous silicon thin films and their hydrogenation is presented. The metal chamber used for the electrical and dielectric measurements is also described. A brief mention is made-on the electrode structure, film area and film geometry.