Effect of Hypoeutectic Boron Addition on the beta Transus of Ti-6Al-4V Alloy

In the present study, the beta transus of boron-modified Ti-6Al-4V alloy was found to be almost equivalent to that of the normal alloy, although there is a difference in interstitial element content large enough to produce significant change. Compositional analysis confirms the scavenging ability of the boride particles that are present in the microstructure toward the interstitial elements. This factor can successfully retard the alpha -> beta phase transformation locally and increase the overall beta transus of boron-added material.

An ultra-stable Cu nanowire under thermo-mechanical loading: A molecular dynamic study

We report on the formation of a stable Body-Centered Heptahedral (BCH) crystalline nanobridge structure of diameter ~ 1nm under high strain rate tensile loading to a <100> Cu nanowire. Extensive Molecular Dynamics (MD) simulations are performed. Six different cross-sectional dimensions of Cu nanowires are analyzed, i.e. 0.3615 x 0.3615 nm2, 0.723 x 0.723 nm2, 1.0845 x 1.0845 nm2, 1.446 x 1.446 nm2, 1.8075 x 1.8075 nm2, and 2.169 x 2.169 nm2. The strain rates used in the present simulations are 1 x 109 s-1, 1 x 108 s-1, and 1 x 107 s-1. We have shown that the length of the nanobridge can be characterized by larger plastic strain. A large plastic deformation is an indication that the structure is highly stable. The BCH nanobridge structure also shows enhanced mechanical properties such as higher fracture toughness and higher failure strain. The effect of temperature, strain rate and size of the nanowire on the formation of BCH structure is also explained in details. We also show that the initial orientation of the nanowires play an important role on the formation of BCH crystalline structure. Results indicate that proper tailoring of temperature and strain rate during processing or in the device can lead to very long BCH nanobridge structure of Cu with enhanced mechanical properties, which may find potential application for nano-scale electronic circuits.

Field emission properties of carbon nanotube arrays with defects and impurities

Field emission from carbon nanotubes (CNTs) in the form of arrays or thin films give rise to several strongly correlated process of electromechanical interaction and degradation. Such processes are mainly due to (1) electron-phonon interaction (2) electromechanical force field leading to stretching of CNTs (3) ballistic transport induced thermal spikes, coupled with high dynamic stress, leading to degradation of emission performance at the device scale. Fairly detailed physics based models of CNTs considering the aspects (1) and (2) above have already been developed by these authors, and numerical results indicate good agreement with experimental results. What is missing in such a system level modeling approach is the incorporation of structural defects and vacancies or charge impurities. This is a practical and important problem due to the fact that degradation of field emission performance is indeed observed in experimental I-V curves. What is not clear from these experiments is whether such degradation in the I-V response is due to dynamic reorientation of the CNTs or due to the defects or due to both of these effects combined. Non-equilibrium Green’s function based simulations using a tight-binding Hamiltonian for single CNT segment show up the localization of carrier density at various locations of the CNTs. About 11% decrease in the drive current with steady difference in the drain current in the range of 0.2-0.4V of the gate voltage was reported in literature when negative charge impurity was introduced at various locations of the CNT over a length of ~20nm. In the context of field emission from CNT tips, a simplistic estimate of defects have been introduced by a correction factor in the Fowler-Nordheim formulae. However, a more detailed physics based treatment is required, while at the same time the device-scale simulation is necessary. The novelty of our present approach is the following. We employ a concept of effective stiffness degradation for segments of CNTs, which is due to structural defects, and subsequently, we incorporate the vacancy defects and charge impurity effects in the Green’s function based approach. Field emission induced current-voltage characteristics of a vertically aligned CNT array on a Cu-Cr substrate is then simulated using a detailed nonlinear mechanistic model of CNTs coupled with quantum hydrodynamics. An array of 10 vertically aligned and each 12 m long CNTs is considered for the device scale analysis. Defect regions are introduced randomly over the CNT length. The result shows the decrease in the longitudinal strain due to defects. Contrary to the expected influence of purely mechanical degradation, this result indicates that the charge impurity and hence weaker transport can lead to a different electromechanical force field, which ultimately can reduce the strain. However, there could be significant fluctuation in such strain field due to electron-phonon coupling. The effect of such fluctuations (with defects) is clearly evident in the field emission current history. The average current also decreases significantly due to such defects.

Ultrasonic Lamb wave based monitoring of corrosion type of damage in plate using a circular array of piezoelectric transducers

In this paper we propose a concept and report experimental results based on a circular array of Piezoelectric Wafer Active Sensors (PWASs) for rapid localization and parametric identification of corrosion type damage in metallic plates. Implementation of this circular array of PWASs combines the use of ultrasonic Lamb wave propagation technique and an algorithm based on symmetry breaking in the signal pattern to locate and monitor the growth of a corrosion pit on a metallic plate. Wavelet time-frequency maps of the sensor signals are employed to obtain an insight regarding the effect of corrosion growth on the Lamb wave transmission in time-frequency scale. We present here a method to eliminate the time scale, which helps in identifying easily the signature of damage in the measured signals. The proposed method becomes useful in determining the approximate location of the damage with respect to the location of three neighboring sensors in the circular array. A cumulative damage index is computed from the wavelet coefficients for varying damage sizes and the results appear promising. Damage index is plotted against the damage parameters for frequency sweep of the excitation signal (a windowed sine signal). Results of corrosion damage are compared with circular holes of various sizes to demonstrate the applicability of present method to different types of damage. (C) 2011 Elsevier Ltd. All rights reserved.

Partial Flow Sensitivity

Compiler optimizations need precise and scalable analyses to discover program properties. We propose a partially flow-sensitive framework that tries to draw on the scalability of flow-insensitive algorithms while providing more precision at some specific program points. Provided with a set of critical nodes — basic blocks at which more precise information is desired — our partially flow-sensitive algorithm computes a reduced control-flow graph by collapsing some sets of non-critical nodes. The algorithm is more scalable than a fully flow-sensitive one as, assuming that the number of critical nodes is small, the reduced flow-graph is much smaller than the original flow-graph. At the same time, a much more precise information is obtained at certain program points than would had been obtained from a flow-insensitive algorithm.

Simulation of RNA silencing pathway for time-dependent transgene transcription rate

The synthesis of dsRNA is analyzed using a pathway model with amplifications caused by the aberrant RNAs. The transgene influx rate is assumed time-decaying considering the fact that the number of transgenes can not be infinite. The dynamics of the transgene induced RNA silencing is investigated using a system of coupled nonautonomous ordinary nonlinear differential equations which describe the model phenomenologically. The silencing phenomena are detected after a period of transcription. Important contributions of certain parameters are discussed with several numerical examples.

Modeling the Field Emission Current Fluctuation in Carbon Nanotube Thin Films

Owing to their distinct properties, carbon nanotubes (CNTs) have emerged as promising candidate for field emission devices. It has been found experimentally that the results related to the field emission performance show variability. The design of an efficient field emitting device requires the analysis of the variabilities with a systematic and multiphysics based modeling approach. In this paper, we develop a model of randomly oriented CNTs in a thin film by coupling the field emission phenomena, the electron-phonon transport and the mechanics of single isolated CNT. A computational scheme is developed by which the states of CNTs are updated in time incremental manner. The device current is calculated by using Fowler-Nordheim equation for field emission to study the performance at the device scale.

Adaptive control of vibration transmission in a strut system

In this article, theoretical and the experimental studies are reported on the adaptive control of vibration transmission in a strut system subjected to a longitudinal pulse train excitation. In the control scheme, a magneto-strictive actuator is employed at the downstream transmission point in the secondary path. The actuator dynamics is taken into account. The system boundary parameters are first estimated off-line, and later employed to simulate the system dynamics. A Delayed-X Filtered-E spectral algorithm is proposed and implemented in real time. The underlying mechanics based filter construction allows for the time varying system dynamics to be taken into account. This work should be of interest for active control of vibration and noise transmission in helicopter gearbox support struts and other systems.