Development of an Active Superconducting Magnetic Bearing

The potential use of YBa2Cu3C7as an active component in a magnetic bearing is being investigated. Measurements are being made of the load bearing capacity and related stiffnesses in comparison to predictions from the critical state model. Although the load bearing capacity is high and increases with the square of the magnetic field trapped the stiffness is low. We report on a novel design concept to overcome this problem. © 1995 IEEE

Bearings and energy storage

Passive magnetic bearings are ideal components for energy storage flywheels which require small dynamic loads and low-maintenance bearings with minimal power requirements. High temperature superconductors such as YBCO can be used to fabricate these bearings and achieve the desired magnetic properties. Stiffness and gap decay due to high speed can be addressed by dynamically altering bearing geometry to provide active control with bulk materials.

Dynamic properties of superconducting magnetic bearings

The potential use of YBa2j as an active component in a magnetic bearing is being investigated. Although the load bearing capacity is high and increases with the square of the magnetic field trapped, the stiffness is low. Both the stiffness and the lévitation height are a function of the loading history of the bearing. At Cambridge we have been investigating the effects of dynamic loading such as single large excursions from steady state loads and cyclically applied loads such as vibrations. Since a superconducting bearing has little inherent damping cyclic loads applied at or near its natural frequency can have catastrophic effects. The information being gathered at Cambridge will be used to enable these effects to be mitigated in the bearing design process. © 1997 IEEE.

芍药花色形成的化学机制及其化学分类研究

本文以9 个芍药野生种（15 份种质）、104 个品种及2 个牡丹芍药组间杂种的花瓣为材料，利用液质联用技术鉴定了花瓣中的色素成分并探讨了芍药花色形成的化学机制和化学分类法。 结果表明，芍药花中主要含有5 种花青素，即芍药花素-3，5-二葡糖苷（ peonidin-3,5-di-O-glucoside ， Pn3G5G ）; 矢车菊素-3 ， 5- 二葡糖苷（ cyanidin-3,5-di-O-glucoside ， Cy3G5G ）; 天竺葵素-3 ， 5- 二葡糖苷（ pelargonidin-3,5-di-O-glucoside ， Pg3G5G ）; 芍药花素-3- 葡糖苷（peonidin-3-O-glucoside，Pn3G）和矢车菊素-3-葡糖苷（cyanidin-3-O-glucoside，Cy3G）。此外，3 种微量的花青素首次在芍药中发现：它们分别为芍药花素-3-葡萄糖-5-阿拉伯糖苷（peonidin-3-O-glucoside-5-O-arabinoside，Pn3G5Ara）、矢车菊素-3- 葡萄糖-5- 半乳糖苷（ cyanidin-3-O-glucoside-5-O-galactoside ，Cy3G5Gal）和天竺葵素-3-葡萄糖-5-半乳糖苷（pelargonidin-3-O-glucoside-5-Ogalactoside，Pg3G5Gal）。特征花青素Cy3G5Gal 和Pg3G5Gal 仅在新疆芍药（Paeonia anomala L.）及其亚种川赤芍（P. anomala subsp. veitchii(Lynch) D. Y.Hong & K. Y. Pan）中被检测出来，表明它们属于同一个种。Pn3G5Ara 仅存在于欧洲的野生芍药花瓣中，表明中国野生芍药和欧洲芍药的花青素代谢途径不同。 芍药花瓣中主要含有11 种花黄素，均为黄酮醇类物质。包括栎精-3，7 二葡糖苷（ quercetin-3,7-di-O-glucoside ）、山奈酚-3 ， 7 二葡糖苷（kaempferol-3,7-di-O-glucoside）、异鼠李素-3，7 二葡糖苷（isorhamnetin-3,7-di-Oglucoside）、栎精-3-O-(6”-没食子酰基)-葡糖苷 [quercetin-3-O-（6”-O-galloyl）-glucoside] 、栎精-3- 葡糖苷（ quercetin-3-O-glucoside ）、山奈酚-7- 葡糖苷（ kaempferol-7-O-glucoside ）、山奈酚-3-O- （ 6”- 没食子酰基） - 葡糖苷[kaempferol-3-O-（6”-O-galloyl)-glucoside]、异鼠李素-3-O-（6”-没食子酰基）-葡糖苷 [isorhamnetin-3-O- （ 6”-O-galloyl ） -glucoside] 、山奈酚-3- 葡糖苷（kaempferol-3-O-glucoside）、异鼠李素-3-葡糖苷（isorhamnetin-3-O-glucoside）和山奈酚-丙二酰葡糖苷（kaempferol-malonyl-glucoside）。此外，查耳酮在黄色的栽培品种‘黄金轮’和牡丹芍药组间杂交种‘伊藤杂种’中首次被检测到。其化学结构为查耳酮-2’-葡糖苷（chalcononaringenin 2’-O-glucoside），它是花瓣表现出黄色的主要色素，它与黄色牡丹野生种‘滇牡丹’（P. delavayi Franchet）花瓣中主要黄色色素成分一致。 通过对所有芍药野生种和栽培品种的色素分析，研究发现花青素是芍药花瓣中主要的色素，其中Pn3G5G 是花瓣中含量最高的花青素苷，其次为Cy3G5G。3G 型糖苷仅在少数品种中检测出来。此外，黄酮醇是芍药花瓣中重要的辅助色素。山奈酚苷是花瓣中含量最高的黄酮醇类，其次是栎精。 多元线性回归分析的结果表明，芍药花色的形成主要与花瓣中Pn3G5G、Cy3G5G 和Pg3G5G 的含量及总花青素量（TA）有关。根据8 种花青素结构与花色组成，将国内的野生种和大部分品种进行了化学分类：所有样本聚成3 大类，聚类后的树状图与其花色、花色素组成数据相一致，直观反映了野生种和栽培品种花色形成的化学背景和表型相似性程度。 芍药成色机理和化学分类的初步研究，对芍药新花色育种具有重要意义：芍药鲜红色花的育种中，育种亲本应具有高的Cy3G 含量、低的辅助色素效应指数。选育深紫色花或紫黑色花的品种，亲本应具有高的Pn3G5G 含量和低的Pg3G5G 含量。

Field emission from tetrahedrally bonded amorphous carbon

The field emission behaviour of a series of Tetrahedrally Bonded Amorphous Carbon (ta-C) films has been measured. The films were produced using a Filtered Cathodic Vacuum Arc System. The threshold field for emission and current densities achievable have been investigated as a function of sp3/sp2 bonding ratio and nitrogen content. Typical as-grown undoped ta-C films have a threshold field of order 10-15 V/μm and optimally nitrogen-doped films exhibit fields as low as 5 V/μm. The emission as a function of back contact and front surface condition has also been considered and shows that the back contact has only a minor effect on emission efficiency. However, after etching in either an oxygen or hydrogen plasma, the films show a marked reduction in threshold field, down to as low as 2-3 V/μm, and a marked improvement in emission site density.

Amorphous carbon for use in thin film transistors

Tetrahedrally bonded amorphous carbon (ta-C) is a new type of semiconducting thin film material. It can be produced at room temperature using the Filtered Cathodic Vacuum Arc technique. The as-grown undoped ta-C is p-type in nature but it can be n-doped by the addition of nitrogen during deposition. This paper will describe thin film transistor design and fabrication using ta-C as the active channel layer.

Tetrahedrally bonded amorphous carbon for field-emission displays

Field emission from a series of tetrahedrally bonded amorphous-carbon (ta-C) films, deposited in a filtered cathodic vacuum arc, has been measured. The threshold field for emission and current densities achievable have been investigated as a function of sp3/sp2 bonding ratio and nitrogen content. Typical as-grown undoped ta-C films have threshold fields of the order 10-15 V/μm and optimally nitrogen doped films exhibited fields as low as 5 V/μm. In order to gain further understanding of the mechanism of field emission, the films were also subjected to H2, Ar, and O2 plasma treatments and were also deposited onto substrates of different work function. The threshold field, emission current, emission site densities were all significantly improved by the plasma treatment, but little dependence of these properties on work function of the substrate was observed. This suggests that the main barrier to emission in these films is at the front surface.

Defect and disorder reduction by annealing in hydrogenated tetrahedral amorphous carbon

Hydrogenated tetrahedral amorphous carbon (ta-C:H) is a form of diamond-like carbon with a high sp3 content (>60%), grown here using a plasma beam source. Information on the behaviour of hydrogen upon annealing is obtained from effusion measurements, which show that hydrogen does not effuse significantly at temperatures less than 500 °C in films grown using methane and 700 °C in films grown using acetylene. Raman measurements show no significant structural changes at temperatures up to 300 °C. At higher temperatures, corresponding to the onset of effusion, the Raman spectra show a clustering of the sp2 phase. The density of states of ta-C:H is directly measured using scanning tunnelling spectroscopy. The measured gradients of the conduction and valence band tails increase up to 300 °C, confirming the occurrence of band tail sharpening. Examination of the photoluminescence background in the Raman spectra shows an increase in photoluminescence intensity with decreasing defect density, providing evidence that paramagnetic defects are the dominant non-radiative recombination centres in ta-C:H.

Density, sp3 content and internal layering of DLC films by X-ray reflectivity and electron energy loss spectroscopy

A variety of hydrogenated and non-hydrogenated amorphous carbon thin films have been characterized by means of grazing-incidence X-ray reflectivity (XRR) to give information about their density, thickness, surface roughness and layering. We used XRR to validate the density of ta-C, ta-C:H and a-C:H films derived from the valence plasmon in electron energy loss spectroscopy measurements, up to 3.26 and 2.39 g/cm3 for ta-C and ta-C:H, respectively. By comparing XRR and electron energy loss spectroscopy (EELS) data, we have been able for the first time to fit a common electron effective mass of m*/me = 0.87 for all amorphous carbons and diamond, validating the `quasi-free' electron approach to density from valence plasmon energy. While hydrogenated films are found to be substantially uniform in density across the film, ta-C films grown by the filtered cathodic vacuum arc (FCVA) show a multilayer structure. However, ta-C films grown with an S-bend filter show a high uniformity and only a slight dependence on the substrate bias of both sp3 and layering.

Preparation of tetrahedral amorphous carbon films by filtered cathodic vacuum arc deposition

Tetrahedrally bonded amorphous carbon (ta-C) and nitrogen doped (ta-C:N) films were obtained at room temperature in a filtered cathodic vacuum arc (FCVA) system incorporating an off-plane double bend (S-bend) magnetic filter. The influence of the negative bias voltage applied to substrates (from -20 to -350 V) and the nitrogen background pressure (up to 10-3 Torr) on film properties was studied by scanning electron microscopy (SEM), electron energy loss spectroscopy (EELS), Raman spectroscopy, X-ray photoemission spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and X-ray reflectivity (XRR). The ta-C films showed sp3 fractions between 84% and 88%, and mass densities around 3.2 g/cm3 in the wide range of bias voltage studied. In contrast, the compressive stress showed a maximum value of 11 GPa for bias voltages around -90 V, whereas for lower and higher bias voltages the stress decreased to 6 GPa. As for the ta-C:N films grown at bias voltages below -200 V and with N contents up to 7%, it has been found that the N atoms were preferentially sp3 bonded to the carbon network with a reduction in stress below 8 GPa. Further increase in bias voltage or N content increased the sp2 fraction, leading to a reduction in film density to 2.7 g/cm3.