Growth of AlGaN epitaxial film with high Al content by metalorganic chemical vapour deposition

A high-Al-content AlGaN epilayer is grown on a low-temperature-deposited AlN buffer on (0001) sapphire by low pressure metalorganic chemical vapour deposition. The dependence of surface roughness, tilted mosaicity, and twisted mosaicity on the conditions of the AlGaN epilayer deposition is evaluated. An AlGaN epilayer with favourable surface morphology and crystal quality is deposited on a 20 nm low-temperature-deposited AlN buffer at a low V/III flow ratio of 783 and at a low reactor pressure of 100 Torr, and the adduct reaction between trimethylaluminium and NH3 is considered.

The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures

Al0.38Ga0.62N/AIN/GaN HEMT structures have been grown by metal-organic chemical vapor deposition (MOCVD) on 2-inch sapphire substrates. Samples with AIN growth time of 0s (without AIN interlayer), 12, 15, 18 and 24s are characterized and compared. The electrical properties of two-dimensional electron gas (2DEG) are improved by introducing AIN interlayers. The AIN growth time in the range of 12-18s, corresponding to the AIN thickness of 1-1.5 nm, is appropriate for the design of Al0.38Ga0.62N/AIN/GaN HEMT structures. The lowest sheet resistance of 277 Omega sq(-1) and highest room temperature 2DEG mobility of 1460 cm(2)V(-1) s(-1) are obtained on structure with AIN growth time of 12s. The structure with AIN growth time of 15s exhibits the highest 2DEG concentration of 1.59 x 10(13) cm(-2) and the smallest RMS surface roughness of 0.2 nm. (c) 2006 Elsevier B.V. All rights reserved.

Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers

We have developed a low-temperature (LT) growth technique. Even with Ge fraction x upto 90%, the total thickness of fully relaxed GexSi1-x buffers can he reduced to 1.7 mu m with dislocation density lower than 5 x 10(6) cm(-2). The surface roughness is no more than 6 nm. The strain relaxation is quite inhomogeneous From the beginning. Stacking faults generate and form the mismatch dislocations in the interface of GeSi/LT-Si. (C) 1999 Elsevier Science B.V. All rights reserved.

Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer

A Ge layer with a pitting surface can be obtained when the growth temperature is lowered to 290 degrees C. On the low temperature Ge buffer layer with pits, high quality Ge layer was grown at 600 degrees C with a threading dislocation density of similar to 1x10(5)cm(-2). According to channeling and random Rutherford backscattering spectrometry spectra, a chi(min) value of 10% and 3.9% was found, respectively, at the Ge/Si interface and immediately under the surface peak. The root-mean-square surface roughness of Ge film was 0.33nm.

Multistage etching process for microscopically smooth tellurite glass surfaces in optical fibers

Bulk samples of tellurite glass with composition 75TeO(2)-20ZnO-5Na(2)O (TZN) were fabricated by melting and quenching techniques. In order to improve the surface quality of optical fiber preform made with this tellurite glass, the authors developed a multistage etching process. The relationship between successive etching treatments and roughness of the TZN glass surface was probed by using an atomic force microscope. The results demonstrate that this multistage etching method effectively improves this tellurite glass surface smoothness to a level comparable with that of a reference silica glass slide, and the corresponding chemical micromechanisms and fundamentals are discussed and confirmed by atomic force microscopy, potentially contributing to the development of multicomponent soft glass fibers and devices. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3437017]

Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers

We have developed a low-temperature (LT) growth technique. Even with Ge fraction x upto 90%, the total thickness of fully relaxed GexSi1-x buffers can he reduced to 1.7 mu m with dislocation density lower than 5 x 10(6) cm(-2). The surface roughness is no more than 6 nm. The strain relaxation is quite inhomogeneous From the beginning. Stacking faults generate and form the mismatch dislocations in the interface of GeSi/LT-Si. (C) 1999 Elsevier Science B.V. All rights reserved.

Influence of Contact Geometry on Hardness Behavior in Nano-indentation

In this paper the influence of contact geometry, including the round tip of the indenter and the roughness of the specimen, on hardness behavior for elastic plastic materials is studied by means of finite element simulation. We idealize the actual indenter by an equivalent rigid conic indenter fitted smoothly with a spherical tip and examine the interaction of this indenter with both a flat surface and a rough surface. In the latter case the rough surface is represented by either a single spherical asperity or a dent (cavity). Indented solids include elastic perfectly plastic materials and strain hardening elastic-plastic materials, and the effects of the yield stress and strain hardening index are explored. Our results show that due to the finite curvature of the indenter tip the hardness versus indentation depth curve rises or drops (depending on the material properties of the indented solids) as the indentation depth decreases, in qualitative agreement with experimental results. Surface asperities and dents of curvature comparable to that of the indenter tip can appreciably modify the hardness value at small indentation depth. Their effects would appear as random variation in hardness.

Annealing effects in silicon implanted with helium

Silicon samples were implanted with helium and analyzed by atomic force microscopy (AFM) and Raman spectroscopy before and after annealing in the range of 523-1273 K. After annealing at 523 K, the amorphous area induced by He-ion implantation at room temperature was partially recovered and grain sizes became larger. The surface morphology was analyzed through AFM measurements and it was observed that root mean square of the surface roughness alters upwards and then downwards with annealing temperature. (C) 2008 Elsevier B.V. All rights reserved.

Stimuli-responsive polyelectrolyte block copolymer brushes synthesized from the si wafer via atom-transfer radical polymerization

Surface-tethered oppositely charged weak polyelectrolyte block copolymer brushes composed of poly(2-vinyl pyridine) (P2VP) and poly(acrylic acid) (PAA) were grown from the Si wafer by atom-transfer radical polymerization. The P2VP-b-PAA brushes were prepared through hydrolysis of the second PtBA block to the corresponding acrylic acid. The P2VP-b-PAA brushes with different PAA block length were obtained. The P2VP-b-PAA brushes revealed a unique reversible wetting behavior with pH. The difference between the solubility parameters for P2VP and PAA, the changes of surface chemical composition and surface roughness, and the reversible wetting behavior illustrated that the surface rearrangement occurred during treatment of the P2VP-b-PAA brushes by aqueous solution with different pH value. The reversible properties of the P2VP-b-PAA brushes can be used to regulate the adsorption of the sulfonated PS nanoparticles.

Effects of molecular weight, solvent and substrate on the dewetting morphology of polystyrene films

Surface morphology of polystyrene (PS) films on different substrates by spin-coating before and after annealing was observed using atomic force microscopy (AFM). The effects of polymer molecular weight, substrates, solvents, and annealing conditions on the morphology of the films were investigated. Before annealing, the grain height decreases, and simultaneously the grain diameter increases with molecular weight (M-w) within the measured molecular weight. After annealing. the situation is opposite, i.e., the grain height increases while the grain diameter decreases with M-w. Furthermore, after annealing the smaller surface roughness (Ra) was obtained. It was also found that film surface roughness (Ra) depends on the vapor pressure and dipole moment of different used solvents as well as the substrates. The experimental results show that when the used solvents have similar dipole moment but different vapor pressure, the Ra of PS film decreased with the decreasing vapor pressure of solvents whether on silicon or on mica. And when the used solvents have close vapor pressure but different dipole moment, the Ra decreased with the increasing of solvent dipole moments on both substrates.

Oriented polyoxometalate-polycation multilayers on a carbon substrate

In this paper, a new method of fabricating multilayers on a carbon substrate is presented. First, a uniformly charged carbon surface was prepared through molecular design. Then an ultrathin film consisting of layer-pairs of oppositely charged polymeric cationic poly(diallyldimethylammonium chloride) (PDDA) and silicotungstate, SiW12O404- (SiW12), was grown layer-by-layer onto the grafted carbon substrate using a molecular self-assembly technique and an electrochemical method. The technique allows one to prepare highly adherent, dense and smooth films of polyoxometalates with special properties. By combining cyclic voltammetry (CV) and X-ray (XR) reflectometry, it was determined that the average surface density of SiW12 was 2.10 x 10(-10) mol cm(-2), and the thickness increase per adsorption of PDDA-SiW12 was 1.7 +/- 0.2 nm, indicating that the amount of SiW12 anion per one layer adsorption corresponded to a monolayer coverage. Atomic force microscopy (AFM) was also used to examine the surface morphology and determine the grain size distribution and roughness for multilayer films. An increase in root-mean-square (RMS) surface roughness from 7 to 9 Angstrom was observed as the number of layer-pairs in the film increased from 2 to 6. FTIR results showed that the good stability of the multilayer films was due to Coulomb interactions between the SiW12 anion and the polymeric cations PDDA. Moreover, the multilayer films, in acidic aqueous solution, showed good electrocatalytic activity toward the reduction of NO2-, and the catalytic currents increased with increasing the layer numbers of SiW12 adsorption. These characteristics of the multilayer films might find potential applications in the field of sensors and microelectronics devices.

Ultrathin multilayer films incorporating Keggin-type heteropolyanion clusters

Two new ultrathin multiplayer films have been successfully prepared fi-om Keggin-type heteropoly acids H-4[SiW12O40] and H-3[PMo12O40] with polyelectrolytes PEI, PSS, and PAH, using the electrostatic layer-by-layer self-assembly, technique. The XR results reveal their film thickness at nanoscale (similar to 20 nm). According to the AFM images, it is believed that the surface roughness (rough degree of film surface) of the polyelectrolyte-polyoxometalate film greatly depends on the kind of polyoxometalates.

Atomic force microscopy imaging of molybdenum oxide film electrodeposited on a carbon electrode

Non-stoichiometric mixed-valent molybdenum(VI, V) oxide film was grown on carbon substrates by the electrodeposition method. Responses of the prepared molybdenum oxide thin films to potential and to different solution acidities were studied by cyclic voltammetry, and the corresponding morphological changes of the film were monitored by atomic force microscopy (AFM). AFM images of the molybdenum oxide film show that the characteristic domed structure on the film surface increased during the transition from the oxidized state to the reduced state without signification change in the KMS surface roughness value. Furthermore, AFM studies show that the solution acidity has great effect on the morphology of the films, and the films undergo a homogenizing process with increasing pH of the solutions. (C) 1999 Elsevier Science S.A. All rights reserved.

Aging in EPDM used for outdoor insulation

The effect of accelerated weather aging an ethylene-propylene-diene monomer(EPDM) rubber used for outdoor insulation was studied by surface roughness measurement and X-ray photoelectron spectroscopy(xps). The surface roughness of EPDM rubber changed with aging time. The surface oxygen and aluminum content were found to increase and that of carbon, silicon and nitrogen to decrease with time. The detailed XPS analysis indicated that the concentration of carbon in C-C decreased and that of highly oxidized carbons in C-O, C=O and O=C-O increased with time, which was due to the oxidation of EPDM rubber polymer. The appearance of O=C-O on the surface of EPDM rubber was a signal that EPDM rubber became aged. The aging speed decreased with time. The aging mechanism is discussed also.

岩体力学参数及稳定性能量判据研究

There are two major problems that have been concerned all the times, which are the mechanics characters of joint rock mass and the criterion for stability of engineering rock. Aim at the two problems, several works were conducted as follow: (1) Firstly, the mechanics characters of rock mass was studied by means of the Distinct Element Code. Subsequently, it was studied that the sensibility of joint surface roughness, strength of joint wall, joint stiffness ( i.e. tangential and normal stiffness) on the rock mass strength. (2) Based on the experimental rock mass classification methods of RMR and GSI, the program of “Parameters Calculation of the Rock Mass ” was developed. It has realized the rapid choice of rock mass parameters. (3) The concept of Representive Element Volume was induced based on the study of dimensional effect of rock mass. The Representive Element Volume of the horizontal and vertical pillar (ab. Two Pillars ) in the 2nd zone of Jinchuan mine were gained by the Geology Statistic Method and the Distinct Element Code. And then, the strength and deformatiom parameters of rock mass of the Two Pillars were obtained through numerical experiment. (4) From the confining depressure after thriaxial compression test of rock sample, it was concluded that the failure of rock is caused mainly by the lateral deformation and energy release happened during the confining depressure processure. The criterion of plastic energy catastrophe of rock engineering failure was proposed and validated. Subsquently, the stability of the horizontal pillar and Qianjiangping landslide in Three Gorges was judged by means of above-mentioned method. (5) Based on the fact there is a phenomenon of increasing energy concentration while the rock mass was compressed, rock information entropy (i.e. energy distribution entropy) was proposed. And it was revealed that there was change of energy distribution entropy while the rock mass was compressed to failure.