The spin-orbit resonant problem including core-mantle gravitational coupling

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

A new family of zero-current-switching PWM converters and a novel HPF-ZCS-PWM boost rectifier

A new family of direct current (DC) to DC converters based on a zero current switching pulse width modulated (ZCS-PWM) soft commutation cell is presented. This ZCS-PWM cell is consists of two transistors, two diodes, two inductors and one capacitor; and provides zero voltage turn-on to the diodes, a zero-current turn-on and a zero-current zero-voltage turn-off to the transistors. In addition, a new commutation cell in a new ZCS-PWM boost rectifier is developed, obtaining a structure with power factor near the unity, high efficiency at wide load range and low total harmonic distortion in the input current.

Influence of polyaniline and phthalocyanine hole-transport layers on the electrical performance of light-emitting diodes using MEH-PPV as emissive material

The influence of layer-by-layer films of polyaniline and Ni-tetrasulfonated phthalocyanine (PANI/Ni-TS-Pc) on the electrical performance of polymeric light-emitting diodes (PLED) made from (poly[2-methoxy-5-(2`-ethyl-hexyloxy)-1,4-phenylene vinylene]) (MEH-PPV) is investigated by using current versus voltage measurements and impedance spectroscopy. The PLED is composed by a thin layer of MEH-PPV sandwiched between indium tin oxide (ITO) and aluminum electrodes, resulting in the device structure ITO/(PANI/Ni-TS-Pc)(n)/MEH-PPV/Al, where n stands for the number of PANI/Ni-TS-Pc bilayers. The deposition of PANI/Ni-TS-Pc leads to a decrease in the driving voltage of the PLEDs, which reaches a minimum when n = 5 bilayers. In addition, impedance spectroscopy data reveal that the PLED impedance decreases as more PANI/Ni-TS-Pc bilayers are deposited. The PLED structure is further described by an equivalent circuit composed by two R-C combinations, one for the bulk and other for the interface components, in series with a resistance originated in the ITO contact. From the impedance curves, the values for each circuit element is determined and it is found that both, bulk and interface resistances are decreased upon PANI/Ni-TS-Pc deposition. The results indicate that PANI/NiTS-Pc films reduce the contact resistance at ITO/MEH-PPV interface, and for that reason improve the hole-injection within the PLED structure. (c) 2007 Elsevier B.V. All rights reserved.

Organic light emitting diodes with europium (III) emissive layers based on beta-diketonate complexes: The influence of the central ligand

This work shows a comparative study of organic light emitting diodes based on four different europium complexes with the general formula, Eu(CLs)(3)bipyridine, where the central ligands are DBM [tris(dibenzoylmethane)], TTA [tris(1-(2-thieneyl)-4,4,4-trifluoro-1,3-butanedione)], NTA [tris(1-(2-naphthoyl)-3,3,3-trifluoroacetone)] and BTA [tris(1-(2-benzoyl)-3,3,3-trifluoroacetone)]. All devices have a driving voltage of 14-16 V, a very low electrical current at normal operation (less than 1 mA) and a good Wall Plug Efficiency (up to near 10(-3)%). The most suitable central ligand was found to be DBM, with an optical power up to 200 nW (at 612 nm). The BTA exhibits the lowest stability under high applied voltages. The other central ligands have similar results among them. The electroluminescence spectra clearly show the europium ion transitions (with a strong (5)D(0) -> (7)F(2) line) with a CIE color coordinate around (0.56, 0.34). (C) 2008 Elsevier B.V. All rights reserved.

Photo and electroluminescence behavior of Tb(ACAC)(3)phen complex used as emissive layer on organic light emitting diodes

This work shows the luminescence properties of a rare-earth organic complex, the Tb(ACAC)(3)phen. The results show the (5)D(4)->(7)F(3,4,5,6) transitions with no influence of the ligand. The photoluminescence excitation spectrum is tentatively interpreted by the ligands absorption. An organic light emitting diode (CLED) was made by thermal evaporation using TPD (N,N`-bis(3-methylphenyl)N,N`-diphenylbenzidine) and Alq3 (aluminum-tris(8-hydroxyquinoline)) as hole and electron transport layers, respectively. The emission reproduces the photoluminescence spectrum of the terbium complex at room temperature, with Commission Internationale de l`Eclairage - CIE (x,y) color coordinates of (0.28,0.55). No presence of any bands from the ligands was observed. The potential use of this compound in efficient devices is discussed. (C) 2008 Elsevier B.V. All rights reserved.

Development and characterization of light-emitting diodes (LEDs) based on ruthenium complex single layer for transparent displays

In this work, two ruthenium complexes, [Ru(bpy)(3)](PF6)(2) and [Ru(ph2phcn)(3)](PF6)(2) in poly(inethylinethacrylate) matrix were employed to build single-layer light-emitting electrochemical cells by spin coating on indium tin oxide substrate. In both cases the electroluminescence spectra exhibit a relatively broad band with maxima near to 625 rim and CIE (x, y) color coordinates of (0.64, 0.36), which are comparable with the photoluminescence data in the same medium. The best result was obtained with the [Ru(bpy)(3)](PF6)(2) device where the optical output power approaches 10 mu W at the band maximum with a wall-plug efficiency higher than 0.03%. The lowest driving voltage is about 4 V for an electrical current of 20 mA. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ab initio studies of pristine and oxidized Cu3Au(100) and (111) surfaces

We review the previous literature and our recent work on first-principles studies of Cu3Au(100) and (111) surfaces, with focus on the segregation of atomic species to the surface at pristine conditions and in the presence of oxygen. In particular, the combined use of experimental and theoretical tools to achieve chemical identification at an atomic level of the surface species is emphasized and discussed.

Spin accumulation encoded in electronic noise for mesoscopic billiards with finite tunneling rates

We study the effects of spin accumulation (inside reservoirs) on electronic transport with tunneling and reflections at the gates of a quantum dot. Within the stub model, the calculations focus on the current-current correlation function for the flux of electrons injected into the quantum dot. The linear response theory used allows us to obtain the noise power in the regime of thermal crossover as a function of parameters that reveal the spin polarization at the reservoirs. The calculation is performed employing diagrammatic integration within the universal groups (ensembles of Dyson) for a nonideal, nonequilibrium chaotic quantum dot. We show that changes in the spin distribution determine significant alterations in noise behavior at values of the tunneling rates close to zero, in the regime of strong reflection at the gates.

Photoconduction action spectra of regio-regular poly(3-hexylthiopene):TiO2 diodes

The development of polymer-based photovoltaic devices brings the promise of low-cost and lightweight solar energy conversion systems. This technology requires new materials and device architectures with enhanced efficiency and lifetime, which depends on the understanding of charge-transport mechanisms. Organic films combined with electronegative nanoparticles may form systems with efficient dissociation of the photogenerated excitons, thus increasing the number of carriers to be collected by the electrodes. In this paper we investigate the steady-state photoconductive action spectra of devices formed by a bilayer of regio-regular poly(3-hexylthiophene) (RRP3HT) and TiO2 sandwiched between ITO and aluminum electrodes (ITO/TiO2:RRP3HT/Al). Photocurrents were measured for distinct bias voltages with illumination from either side of the device. Heterojunction structures were prepared by spin coating a RRP3HT film on an already deposited TiO2 layer on ITO. Symbatic and antibatic curves were obtained and a model for photocurrent action spectra was able to fit the symbatic responses. The quantum yield increased with the electric field, indicating that exciton dissociation is a field-assisted process as in an Onsager mechanism. Furthermore, the quantum yield was significantly higher when illumination was carried out through the ITO electrode onto which the TiO2 layer was deposited, as the highly electronegative TiO2 nanoparticles were efficient in exciton dissociation.

Dynamics of the 3:1 resonant planetary systems

Many of the discovered exoplanetary systems are involved inside mean-motion resonances. In this work we focus on the dynamics of the 3:1 mean-motion resonant planetary systems. Our main purpose is to understand the dynamics in the vicinity of the apsidal corotation resonance (ACR) which are stationary solutions of the resonant problem. We apply the semi-analytical method (Michtchenko et al., 2006) to construct the averaged three-body Hamiltonian of a planetary system near a 3:1 resonance. Then we obtain the families of ACR, composed of symmetric and asymmetric solutions. Using the symmetric stable solutions we observe the law of structures (Ferraz-Mello,1988), for different mass ratio of the planets. We also study the evolution of the frequencies of σ1, resonant angle, and Δω, the secular angle. The resonant domains outside the immediate vicinity of ACR are studied using dynamical maps techniques. We compared the results obtained to planetary systems near a 3:1 MMR, namely 55 Cnc b-c, HD 60532 b-c and Kepler 20 b-c.

Quasi-bound alpha resonant states populated by the 12C(6Li,d) reaction.

Several narrow alpha resonant 16O states were detected through the 12C(6Li,d) reaction, in the range of 12 to 17 MeV of excitation energy. The reaction was measured at a bombarding energy of 25.5 MeV employing the São Paulo Pelletron-Enge-Spectrograph facility and the nuclear emulsion technique. Experimental angular distributions associated with four natural parity quasi-bound states ncar the 4α threshold are presented and compared to DWBA predictions.

Order induced charge carrier mobility enhancement in columnar liquid crystal diodes

Discotic molecules comprising a rigid aromatic core and flexible side chains have been promisingly applied in OLEDs as self-organizing organic semiconductors. Due to their potentially high charge carrier mobility along the columns, device performance can be readily improved by proper alignment of columns throughout the bulk. In the present work, the charge mobility was increased by 5 orders of magnitude due to homeotropic columnar ordering induced by the boundary interfaces during thermal annealing in the mesophase. State-of-the-art diodes were fabricated using spin-coated films whose homeotropic alignment with formation of hexagonal germs was observed by polarizing optical microscopy. The photophysical properties showed drastic changes at the mesophase-isotropic transition, which is supported by the gain of order observed by X-ray diffraction. The electrical properties were investigated by modeling the current−voltage characteristics by a space-charge-limited current transport with a field dependent mobility.

Resonant States in Negative Ions

Resonant states are multiply excited states in atoms and ions that have enough energy to decay by emitting an electron. The ability to emit an electron and the strong electron correlation (which is extra strong in negative ions) makes these states both interesting and challenging from a theoretical point of view. The main contribution in this thesis is a method, which combines the use of B splines and complex rotation, to solve the three-electron Schrödinger equation treating all three electrons equally. It is used to calculate doubly excited and triply excited states of 4S symmetry with even parity in He-. For the doubly excited states there are experimental and theoretical data to compare with. For the triply excited states there is only theoretical data available and only for one of the resonances. The agreement is in general good. For the triply excited state there is a significant and interesting difference in the width between our calculation and another method. A cause for this deviation is suggested. The method is also used to find a resonant state of 4S symmetry with odd parity in H2-. This state, in this extremely negative system, has been predicted by two earlier calculations but is highly controversial. Several other studies presented here focus on two-electron systems. In one, the effect of the splitting of the degenerate H(n=2) thresholds in H-, on the resonant states converging to this threshold, is studied. If a completely degenerate threshold is assumed an infinite series of states is expected to converge to the threshold. Here states of 1P symmetry and odd parity are examined, and it is found that the relativistic and radiative splitting of the threshold causes the series to end after only three resonant states. Since the independent particle model completely fails for doubly excited states, several schemes of alternative quantum numbers have been suggested. We investigate the so called DESB (Doubly Excited Symmetry Basis) quantum numbers in several calculations. For the doubly excited states of He- mentioned above we investigate one resonance and find that it cannot be assigned DESB quantum numbers unambiguously. We also investigate these quantum numbers for states of 1S even parity in He. We find two types of mixing of DESB states in the doubly excited states calculated. We also show that the amount of mixing of DESB quantum numbers can be inferred from the value of the cosine of the inter-electronic angle. In a study on Li- the calculated cosine values are used to identify doubly excited states measured in a photodetachment experiment. In particular a resonant state that violates a propensity rule is found.

Magnetic tunneling junctions with the Heusler compound Co 2 Cr 0.6 Fe 0.4 Al

Materialen mit sehr hoher Spinpolarisation werden für Anwendungen im Bereich der Spin-Elektronik benötigt. Deshalb werden große Forschungsanstrengungen zur Untersuchung der Eigenschaften von Verbindungen mit potentiell halbmetallischem Charakter, d. h.mit 100% Spinpolarisation, unternommen. In halbmetallischen Verbindungen, erwartet man eine Lücke in der Zustandsdichte an der Fermi Energie für Ladungsträger einer Spinrichtung, wahrend die Ladungsträger mit der anderen Spinrichtung sich metallisch verhalten. Eine Konsequenz davon ist, dass ein Strom, der durch solche Verbindung fließt, voll spinpolarisiert ist. Die hohe Curie-Temperatur Tc (800 K) und der theoretisch vorhergesagte halbmetallische Charakter machen Co2Cr0.6Fe0.4Al (CCFA) zu einem guten Kandidaten für Spintronik-Anwendungen wie magnetische Tunnelkontakte (MTJs = Magnetic Tunneling Junctions). In dieser Arbeit werden die Ergebnisse der Untersuchung der elektronischen und strukturellen Eigenschaften von dünnen CCFA Schichten dargestellt. Diese Schichten wurden in MTJs integriert und der Tunnel-Magnetowiderstands-Effekt untersucht. Hauptziele waren die Messung der Spinpolarisation und Untersuchungen der elektronischen Struktur von CCFA. Der Einfluss verschiedener Depositionsparameter auf die Eigenschaften der Schichten, speziell auf der Oberflächenordnung und damit letztlich auf den Tunnel-Magnetowiderstand (TMR), wurde bestimmt. Epitaktische d¨unne CCFA Schichten mit zwei verschiedenen Wachstumsrichtungen wurden auf verschiedene Substrate und Pufferschichten deponiert. Ein Temperverfahren wurde eingesetzt um die strukturelle Eigenschaften der dünnen Schichten zu verbessern. Für die MTJs wurde Al2O3 als Barrierenmaterial verwendet und Co als Gegenelektrode gewählt. Die Mehrschicht-Systeme wurden in Mesa-Geometrie mit lithographischen Methoden strukturiert. Eine maximal Jullière Spinpolarisation von 54% wurde an Tunnelkontakte mit epitaktischen CCFA Schichten gemessen. Ein starker Einfluss der Tempernbedingungen auf dem TMR wurde festgestellt. Eine Erhörung des TMR wurde mit einer Verbesserung der Oberflächenordung der CCFA Schichten korreliert. Spektroskopische Messungen wurden an den MTJs durchgeführt. Diesen Messungen liefern Hinweise auf inelastische Elektron-Magnon und Elektron-Phonon Stossprozesse an den Grenzflächen. Einige der beobachteten Strukturen konnten mit der berechneten elektronischen Struktur von CCFA korreliert worden.