~(40)Ar~(q+)离子入射金属表面形成的靶原子的特征光谱线

用动能一定而电荷态不同的 40Arq+(6≤q≤14)离子和动能不同的40Ar6+离子分别轰击金属Al, Ti, Ni,Ta和Au表面, 以及分别用动能相同(150 keV)的129Xe6+, 129Xe10+和129Xe15+轰击Ta表面, 靶原子受激辐射发出的200~1000 nm波段的特征光谱线的实验结果. 结果表明, 合适的弹靶组合(40Ar12+轰击Al, 129Xe6+轰击Ta表面)可使靶原子受激辐射的特征光谱的强度显著增强, 而靶原子受激辐射的强度与入射离子的动能没有强的关联.

~(126)Xe~(q+)轰击Al表面产生的原子和离子光谱线

报道了高电荷态离子12 6Xeq + (6≤q≤ 30 )入射到固体Al表面产生的 2 0 0～ 10 0 0nm波段的发射光谱的实验结果。实验表明 ,在弱束流 (nA量级 )高电荷态的情况下 ,通过入射离子与固体靶的相互作用可有效地产生原子和离子的复杂组态间跃迁所形成的可见光波段的特征谱线 ,而且当入射离子的电荷剥离数超过一临界值后 (对Al,q=2 6 ) ,谱线相对强度突然显著增强。根据经典过垒模型COB(Theclassicover barriermodel) ,在入射离子的动能较小 (～ 1keV/u)的条件下 ,高电荷态离子与表面相互作用过程中电子的俘获或转移起着非常重要的作用 ,通过提高入射离子的电荷态可增强入射离子俘获电子的能力 ,显著增强激发粒子的光谱线的强度。

高电荷态离子~(126)Xe~(q+)与Ti固体表面作用的激发光谱

报道用 15 0keV的高电荷态离子1 2 6 Xeq + (6≤q≤ 30 )轰击Ti固体表面产生 2 0 0— 10 0 0nm波段发射光谱的实验结果 .结果显示 ,用电荷态足够高的离子作光谱激发源 ,无需很强的束流强度 (nA量级 ) ,便可激发起样品表面的原子和离子在可见光波段的特征谱线 .当入射离子剥离度q >qc≈ 2 0时 ,Ti原子及其离子的特征谱线强度突然显著增强 ;不同金属靶 ,特征谱线突然增强的qc值不同 .理论分析表明 ,这与q大于此临界值后 ,单电子转移释放能量激发靶材料传导电子气体的表面等离激元密切相关 .

高电荷态Ar~(q+)与Ne碰撞中入射离子电荷交换截面的研究

报道Arq + +Ne(q =8,9,11,12 )碰撞体系中多电子转移过程 ,得到了多组实验测量电荷交换截面数据 ,讨论入射离子电荷交换截面、反冲离子产生截面与入射离子电荷态、能量以及散射离子电荷态的关系 ,并且将实验结果与Arq + +Ar碰撞体系进行对比研究。在修正分子库仑过垒模型的基础上 ,对实验现象做了合理的解释

Size modification of Au nanoparticles induced by slow highly charged ions Ar-40(q+) irradiation

Size modification of Au nanoparticles (NPs), deposited on the Au-thick film surface and irradiated by slow highly charged ions (SHCI) 40Arq+ (3 6 q 6 12) with fixed low dose of 4.3 1011 ions/cm2 and various energy ranging from 74.64 to 290.64 keV at room temperature (293.15 K), was investigated by atomic force microscopy (AFM) and transmission electron microscopy (TEM). The effect of projectile kinetic energy on the modified size of NPs was explored by an appropriate choice of the fixed process parameters such as ion flux, irradiation temperature, incident angle, irradiation time, etc. The morphological changes of NPs were interpreted by models involving collisional mixing, Ostwald ripening (OR) and inverse Ostwald ripening (IOR) of spherical NPs on a substrate. A critical kinetic energy as well as a critical potential energy of the projectile in the Au NPs size modification process were observed.

Sputtering induced by highly charged Pb-208(q+) bombardment on Al surface

Highly charged ions (HCls) carrying high Coulomb potential energy (E-p) could cause great changes in the physical and chemical properties of material surface when they bombard on the solid surface. In our work, the secondary ion yield dependence on highly charged Pbq+ (q = 4-36) bombardment on Al surface has been investigated. Aluminum films (99.99%) covered with a natural oxide film was chosen as our target and the kinetic energy (E-k) was varied between 80 keV and 400 keV. The yield with different incident angles could be described well by the equation developed by us. The equation consists of two parts due to the kinetic sputtering and potential sputtering. The physical interpretations of the coefficients in the said equation are discussed. Also the results on the kinetic sputtering produced by the nuclear energy loss on target Surface are presented.