Luminescence properties of electron-hole-droplets in pure and doped germanium

This work contains 4 topics dealing with the properties of the luminescence from Ge.

The temperature, pump-power and time dependences of the photoluminescence spectra of Li-, As-, Ga-, and Sb-doped Ge crystals were studied. For impurity concentrations less than about 10¹⁵cm^-3, emissions due to electron-hole droplets can clearly be identified. For impurity concentrations on the order of 10¹⁶cm^-3, the broad lines in the spectra, which have previously been attributed to the emission from the electron-hole-droplet, were found to possess pump-power and time dependent line shape. These properties show that these broad lines cannot be due to emission of electron-hole-droplets alone. We interpret these lines to be due to a combination of emissions from (1) electron-hole- droplets, (2) broadened multiexciton complexes, (3) broadened bound-exciton, and (4) plasma of electrons and holes. The properties of the electron-hole-droplet in As-doped Ge were shown to agree with theoretical predictions.

The time dependences of the luminescence intensities of the electron-hole-droplet in pure and doped Ge were investigated at 2 and 4.2°K. The decay of the electron-hole-droplet in pure Ge at 4.2°K was found to be pump-power dependent and too slow to be explained by the widely accepted model due to Pokrovskii and Hensel et al. Detailed study of the decay of the electron-hole-droplets in doped Ge were carried out for the first time, and we find no evidence of evaporation of excitons by electron-hole-droplets at 4.2°K. This doped Ge result is unexplained by the model of Pokrovskii and Hensel et al. It is shown that a model based on a cloud of electron-hole-droplets generated in the crystal and incorporating (1) exciton flow among electron-hole-droplets in the cloud and (2) exciton diffusion away from the cloud is capable of explaining the observed results.

It is shown that impurities, introduced during device fabrication, can lead to the previously reported differences of the spectra of laser-excited high-purity Ge and electrically excited Ge double injection devices. By properly choosing the device geometry so as to minimize this Li contamination, it is shown that the Li concentration in double injection devices may be reduced to less than about 10¹⁵cm^-3 and electrically excited luminescence spectra similar to the photoluminescence spectra of pure Ge may be produced. This proves conclusively that electron-hole-droplets may be created in double injection devices by electrical excitation.

The ratio of the LA- to TO-phonon-assisted luminescence intensities of the electron-hole-droplet is demonstrated to be equal to the high temperature limit of the same ratio of the exciton for Ge. This result gives one confidence to determine similar ratios for the electron-hole-droplet from the corresponding exciton ratio in semiconductors in which the ratio for the electron-hole-droplet cannot be determined (e.g., Si and GaP). Knowing the value of this ratio for the electron-hole-droplet, one can obtain accurate values of many parameters of the electron-hole-droplet in these semiconductors spectroscopically.

Resonance cones and mode conversion in a warm magnetized bounded plasma

The warm plasma resonance cone structure of the quasistatic field produced by a gap source in a bounded magnetized slab plasma is determined theoretically. This is initially determined for a homogeneous or mildly inhomogeneous plasma with source frequency lying between the lower hybrid frequency and the plasma frequency. It is then extended to the complicated case of an inhomogeneous plasma with two internal lower hybrid layers present, which is of interest to radio frequency heating of plasmas.

In the first case, the potential is obtained as a sum of multiply reflected warm plasma resonance cones, each of which has a similar structure, but a different size, amplitude, and position. An important interference between nearby multiply-reflected resonance cones is found. The cones are seen to spread out as they move away from the source, so that this interference increases and the individual resonance cones become obscured far away from the source.

In the second case, the potential is found to be expressible as a sum of multiply-reflected, multiply-tunnelled, and mode converted resonance cones, each of which has a unique but similar structure. The effects of both collisional and collisionless damping are included and their effects on the decay of the cone structure studied. Various properties of the cones such as how they move into and out of the hybrid layers, through the evanescent region, and transform at the hybrid layers are determined. It is found that cones can tunnel through the evanescent layer if the layer is thin, and the effect of the thin evanescent layer is to subdue the secondary maxima of cone relative to the main peak, while slightly broadening the main peak and shifting it closer to the cold plasma cone line.

Energy theorems for quasistatic fields are developed and applied to determine the power flow and absorption along the individual cones. This reveals the points of concentration of the flow and the various absorption mechanisms.

New optoelectronic devices using GaAs-GaAlAs epitaxy

Three subjects related to epitaxial GaAs-GaAlAs optoelectronic devices are discussed in this thesis. They are:

1. Embedded Epitaxy

This is a technique of selective multilayer growth of GaAs- Ga_1-xAl_xAs single crystal structures through stripe openings in masking layers on GaAs substrates. This technique results in prismatic layers of GaAs and Ga_1-xAl_xAs "embedded" in each other and leads to controllable uniform structures terminated by crystal faces. The dependence of the growth habit on the orientation of the stripe openings has been studied. Room temperature embedded double heterostructure lasers have been fabricated using this technique. Threshold current densities as low as 1.5 KA/cm² have been achieved.

2. Barrier Controlled PNPN Laser Diode

It is found that the I-V characteristics of a PNPN device can be controlled by using potential barriers in the base regions. Based on this principle, GaAs-GaAlAs heterostructure PNPN laser diodes have been fabricated. GaAlAs potential barriers in the bases control not only the electrical but also the optical properties of the device. PNPN lasers with low threshold currents and high breakover voltage have been achieved. Numerical calculations of this barrier controlled structure are presented in the ranges where the total current is below the holding point and near the lasing threshold.

3. Injection Lasers on Semi-Insulating Substrates

GaAs-GaAlAs heterostructure lasers fabricated on semi-insulating substrates have been studied. Two different laser structures achieved are: (1) Crowding effect lasers, (2) Lateral injection lasers. Experimental results and the working principles underlying the operation of these lasers are presented. The gain induced guiding mechanism is used to explain the lasers' far field radiation patterns. It is found that Zn diffusion in Ga_1-xAl_xAs depends on the Al content x, and that GaAs can be used as the diffusion mask for Zn diffusion in Ga_1-xAl_xAs. Lasers having very low threshold currents and operating in a stable single mode have been achieved. Because these lasers are fabricated on semi-insulating substrates, it is possible to integrate them with other electronic devices on the same substrate. An integrated device, which consists of a crowding effect laser and a Gunn oscillator on a common semi-insulating GaAs substrate, has been achieved.

Propagation of the fast magnetosonic wave in a tokamak plasma

The propagation of the fast magnetosonic wave in a tokamak plasma has been investigated at low power, between 10 and 300 watts, as a prelude to future heating experiments.

The attention of the experiments has been focused on the understanding of the coupling between a loop antenna and a plasma-filled cavity. Special emphasis has been given to the measurement of the complex loading impedance of the plasma. The importance of this measurement is that once the complex loading impedance of the plasma is known, a matching network can be designed so that the r.f. generator impedance can be matched to one of the cavity modes, thus delivering maximum power to the plasma. For future heating experiments it will be essential to be able to match the generator impedance to a cavity mode in order to couple the r.f. energy efficiently to the plasma.

As a consequence of the complex impedance measurements, it was discovered that the designs of the transmitting antenna and the impedance matching network are both crucial. The losses in the antenna and the matching network must be kept below the plasma loading in order to be able to detect the complex plasma loading impedance. This is even more important in future heating experiments, because the fundamental basis for efficient heating before any other consideration is to deliver more energy into the plasma than is dissipated in the antenna system.

The characteristics of the magnetosonic cavity modes are confirmed by three different methods. First, the cavity modes are observed as voltage maxima at the output of a six-turn receiving probe. Second, they also appear as maxima in the input resistance of the transmitting antenna. Finally, when the real and imaginary parts of the measured complex input impedance of the antenna are plotted in the complex impedance plane, the resulting curves are approximately circles, indicating a resonance phenomenon.

The observed plasma loading resistances at the various cavity modes are as high as 3 to 4 times the basic antenna resistance (~ .4 Ω). The estimated cavity Q’s were between 400 and 700. This means that efficient energy coupling into the tokamak and low losses in the antenna system are possible.

Damping and saturation of a second order electron plasma wave echo

A description is given of experimental work on the damping of a second order electron plasma wave echo due to velocity space diffusion in a low temperature magnetoplasma. Sufficient precision was obtained to verify the theoretically predicted cubic rather than quadratic or quartic dependence of the damping on exciter separation. Compared to the damping predicted for Coulomb collisions in a thermal plasma in an infinite magnetic field, the magnitude of the damping was approximately as predicted, while the velocity dependence of the damping was weaker than predicted. The discrepancy is consistent with the actual non-Maxwellian electron distribution of the plasma.

In conjunction with the damping work, echo amplitude saturation was measured as a function of the velocity of the electrons contributing to the echo. Good agreement was obtained with the predicted J₁ Bessel function amplitude dependence, as well as a demonstration that saturation did not influence the damping results.

Radiation from a short electric dipole antenna in a hot uniaxial plasma

The effects of electron temperature on the radiation fields and the resistance of a short dipole antenna embedded in a uniaxial plasma have been studied. It is found that for ω < ω_p the antenna excites two waves, a slow wave and a fast wave. These waves propagate only within a cone whose axis is parallel to the biasing magnetostatic field B_o and whose semicone angle is slightly less than sin ^(-1) (ω/ω_p). In the case of ω > ω_p the antenna excites two separate modes of radiation. One of the modes is the electromagnetic mode, while the other mode is of hot plasma origin. A characteristic interference structure is noted in the angular distribution of the field. The far fields are evaluated by asymptotic methods, while the near fields are calculated numerically. The effects of antenna length ℓ, electron thermal speed, collisional and Landau damping on the near field patterns have been studied.

The input and the radiation resistances are calculated and are shown to remain finite for nonzero electron thermal velocities. The effect of Landau damping and the antenna length on the input and radiation resistances has been considered.

The radiation condition for solving Maxwell's equations is discussed and the phase and group velocities for propagation given. It is found that for ω < ω_p in the radial direction (cylindrical coordinates) the power flow is in the opposite direction to that of the phase propagation. For ω > ω_p the hot plasma mode has similar characteristics.