Kinetic control of catalytic CVD for high-quality graphene at low temperatures.

Low-temperature (∼600 °C), scalable chemical vapor deposition of high-quality, uniform monolayer graphene is demonstrated with a mapped Raman 2D/G ratio of >3.2, D/G ratio ≤0.08, and carrier mobilities of ≥3000 cm(2) V(-1) s(-1) on SiO(2) support. A kinetic growth model for graphene CVD based on flux balances is established, which is well supported by a systematic study of Ni-based polycrystalline catalysts. A finite carbon solubility of the catalyst is thereby a key advantage, as it allows the catalyst bulk to act as a mediating carbon sink while optimized graphene growth occurs by only locally saturating the catalyst surface with carbon. This also enables a route to the controlled formation of Bernal stacked bi- and few-layered graphene. The model is relevant to all catalyst materials and can readily serve as a general process rationale for optimized graphene CVD.

Synthesis of zinc oxide nanostructures by microheaters in the ambient environment

A catalyst-free synthesis of ZnO nanostructures using platinum microheaters under ambient environmental conditions has been developed. Different types of ZnO nanostructures are synthesized from the oxidization of Zn thin film by local heating. The characterization of two shapes of Pt microheaters is investigated and the relationship between the applied power for heat generation and ZnO nanostructure synthesis is investigated by local heating experiments under ambient conditions. Based on the developed heating approach, synthesis area, location, and morphologies of ZnO nanostructures can be controlled through the deposited thickness of Zn layer and applied heating voltages. Furthermore, a connected multiple-structure (Zn-ZnO-Zn) layer is synthesized using combinative multimicroheaters. © 2002-2012 IEEE.

Concentration dependence of the Er3+ visible and infrared luminescence in Y2-x Erx O3 thin films on Si

Y2-x Erx O3 thin films, with x varying between 0 and 0.72, have been successfully grown on crystalline silicon (c-Si) substrates by radio-frequency magnetron cosputtering of Y2 O 3 and Er2 O3 targets. As-deposited films are polycrystalline, showing the body-centered cubic structure of Y2 O3, and show only a slight lattice parameter contraction when x is increased, owing to the insertion of Er ions. All the films exhibit intense Er-related optical emission at room temperature both in the visible and infrared regions. By studying the optical properties for different excitation conditions and for different Er contents, all the mechanisms (i.e., cross relaxations, up-conversions, and energy transfers to impurities) responsible for the photoluminescence (PL) emission have been identified, and the existence of two different well-defined Er concentration regimes has been demonstrated. In the low concentration regime (x up to 0.05, Er-doped regime), the visible PL emission reaches its highest intensity, owing to the influence of up-conversions, thus giving the possibility of using Y2-x Er x O3 films as an up-converting layer in the rear of silicon solar cells. However, most of the excited Er ions populate the first two excited levels 4I11/2 and 4I13/2, and above a certain excitation flux a population inversion condition between the former and the latter is achieved, opening the route for the realization of amplifiers at 2.75 μm. Instead, in the high concentration regime (Er-compound regime), an increase in the nonradiative decay rates is observed, owing to the occurrence of cross relaxations or energy transfers to impurities. As a consequence, the PL emission at 1.54 μm becomes the most intense, thus determining possible applications for Y2-x Erx O 3 as an infrared emitting material. © 2009 American Institute of Physics.

Polymer gate dielectrics with self-assembled monolayers for high-mobility organic thin-film transistors based on copper phthalocyanine

Organic thin-film transistors based on polycrystalline copper phthalocyanine (CuPc) were fabricated by using poly(vinyl alcohol) as gate dielectric. After treatment of the gate dielectric using an octadecyltrichlorosilane self-assembled monolayer, a mobility of up to 0.11 cm2/V∈s was achieved, which is comparable to that of single-crystal CuPc devices (0.1-1 cm2/V∈s). The surface morphology was analyzed and the possible reasons for the enhanced mobility are discussed. © 2009 Springer-Verlag.

Magnetocaloric and transport study of poly- and nanocrystalline composite manganites La 0.7Ca 0.3MnO 3/La 0.8Sr 0.2MnO 3

Magnetocaloric and transport properties are reported for novel poly- and nanocrystalline double composite manganites, La 0.8Sr 0.2MnO 3/La 0.7Ca 0.3MnO 3, prepared by the sol-gel method. Magnetic field dependence of magnetic entropy change is found to be stronger for the nano- than the polycrystalline composite. The remarkable broadening of the temperature interval, where the magnetocaloric effect occurs in poly- and nanocrystalline composites, causes the relative cooling power (RCP(S)) of the nanocrystalline composite to be reduced by only 10 compared to the Sr based polycrystalline phase. The RCP(S) of the polycrystalline composite becomes remarkably enhanced. The low temperature magnetoresistance is enhanced by 5 for the nanostructured composite. © 2012 American Institute of Physics.

Magnetocaloric effect in La0.75Sr0.25MnO3 manganite

The polycrystalline manganite La0.75Sr0.25MnO 3 prepared by an alternative carbonate precipitation route reveals the rhombohedral perovskite structure. Magnetization isotherms measured up to 2 T are used to determine Curie temperature of 332 K by means of Arrott plot. Maximum of magnetic entropy change is found at Curie temperature. The relative cooling power equal to 64 J/kg for 1.5 T magnetic field, is superior as compared to the manganite with the same chemical composition from the solgel method. © 2010 Elsevier B.V. All rights reserved.

Magnetotransport of La0.5Ba0.5MnO3

Physical properties of polycrystalline La0.5Ba 0.5MnO3 are reported from low temperature (10 K) up to above room temperature. An aim has been to obtain microscopic parameters and to search for the characteristic lengths in terms of which one can discuss the interplay between magnetic, electric, and phonon excitations. The structural and magnetotransport measurements reveal a set of relatively high transition temperatures (near 300 K) between ferromagnetic/metallic and paramagnetic/semiconducting phases. It is found, in particular, that the so-called localization length increases from 0.085 to 0.24 nm when the magnetic field varies from 0 to 8 T. Moreover a "special field value" ∼0.03 T is observed in the description of the electrical resistance. It cannot be presently distinguished whether it is the signature of a spin reorientation transition in the canted phase or a mere saturation field for aligning magnetic domains. The relatively high magnetoresistance effect (≃55% at 8 T and 10 K) makes the La0.5Ba0.5MnO3 a very interesting material for among others sensor applications. © 2009 American Institute of Physics.

Unusual resistivity hysteresis in a bulk magnetoresistive ferromagnetic/ferrimagnetic composite (La0.7 Ca0.3 Mn O3 Mn3 O4): Role of demagnetization effects

The authors report an intriguing resistivity versus magnetic field dependence in polycrystalline composite samples containing a magnetoresistive manganite (ferromagnetic/conducting La0.7 Ca0.3 Mn O3) and a magnetic manganese oxide (ferrimagnetic/insulating Mn3 O4). At 10 K, when the magnetic field is scanned from positive to negative values, the resistance peak occurs at positive magnetic field, instead of zero or negative field as usually observed in polycrystalline manganite samples. The position of the resistance peak agrees well with the cancellation of the internal magnetic field, suggesting that the demagnetization effects are responsible for this behavior. © 2007 American Institute of Physics.

Magnetocaloric effect and magnetic properties of Tb0.9 Sn0.1 MnO3

The magnetocaloric effect in magnetic materials is of great interest nowadays. In this article we present an investigation about the magnetic properties near the magnetic transition in a polycrystalline sample of a manganite Tb0.9 Sn0.1 MnO3. Particularly, we are interested in describing the nature of the magnetic interactions and the magnetocaloric effect in this compound. The temperature dependence of the magnetization was measured to determine the characteristics of the magnetic transition and the magnetic entropy change was calculated from magnetization curves at different temperatures. The magnetic solid is paramagnetic at high temperatures. We observe a dominant antiferromagnetic interaction below Tn =38 K for low applied magnetic fields; the presence of Sn doping in this compound decreases the Ńel temperature of the pure TbMnO3 system. A drastic increase in the magnetization as a function of temperature near the magnetic transition suggests a strong magnetocaloric effect. We found a large magnetic entropy change Δ SM (T) of about -4 J/kg K at H=3 T. We believe that the magnetic entropy change is associated with the magnetic transition and we interpret it as due to the coupling between the magnetic field and the spin ordering. This relatively large value and broad temperature interval (about 35 K) of the magnetocaloric effect make the present compound a promising candidate for magnetic refrigerators at low temperatures. © 2007 American Institute of Physics.

Magnetotransport study of MgB2 superconductor

Precise magnetotransport studies of heat and charge carriers in polycrystalline MgB2 show that magnetic fields up to 8 T remarkably influence electrical resistivity, thermoelectric power and thermal conductivity. The superconducting transition temperature shifts from 39 K to 19 K at 8 T as observed on electric signals. The temperature transition width is weakly broadened. Electron and phonon contributions to the thermal conductivity are separated and discussed. The Debye temperature calculated from a phonon drag thermoelectric power component is inconsistent with values derived through other effects.

Magneto-transport study of Nb-doped Bi/Pb2223 superconductor

The magneto-transport properties of Bi1.5Pb0.4Nb0.1Sr2Ca2Cu 3O10-x polycrystalline, superconducting ceramic are reported. The material was found to be chemically homogeneous and partially textured. The mixed state properties were investigated by measuring the electrical resistivity, longitudinal and transverse (Nernst effect) thermoelectric power, and thermal conductivity. The magnetization and AC susceptibility measurements were also performed. The variation of these characteristics for magnetic fields up to 5 T are discussed and compared to those of the zero field case. The transport entropy and thermal Hall angle are extracted and quantitatively compared to previously reported data of closely related systems. © 2003 Elsevier Science B.V. All rights reserved.

YBa2Cu3O7 tapes prepared by sol-gel deposition techniques: Microstructure and structural characterizations

We report on the preparation conditions of YBa2Cu3O7 polycrystalline superconducting tapes by a sol-gel deposition technique. We present some discussion on the compatibility between the nature of the substrate, the use of a buffer layer, and the conditions used to prepare appropriate superconducting YBa2Cu3O7 materials. We report also on the microstructural characterizations performed in order to evaluate the crystallites size, degree of orientation and connectivity. © 2002 Elsevier Science B.V. All rights reserved.

Creep and oxygen diffusion in magnetite

The creep rate of polycrystalline Fe3O4 has been measured as a fonction of stress and oxygen partial pressure in the temperature range 480-1100°C. A regime of power law creep is found at high stress, with a stress exponent of ≈- 3.1 and an activation energy of 264 kJ/mol. A regime of diffusional flow is found at lower stresses and is interpreted as Nabarro-Herring creep. The data for the two regimes are combined to deduce an oxygen diffusion coefficient of ≈-10-5 exp(-264 kJ/mol/RT) m2s-1, with oxygen vacancies suggested as the mobile species. © 1990.

High-density remote plasma sputtering of high-dielectric-constant amorphous hafnium oxide films

Hafnium oxide (HfOx) is a high dielectric constant (k) oxide which has been identified as being suitable for use as the gate dielectric in thin film transistors (TFTs). Amorphous materials are preferred for a gate dielectric, but it has been an ongoing challenge to produce amorphous HfOx while maintaining a high dielectric constant. A technique called high target utilization sputtering (HiTUS) is demonstrated to be capable of depositing high-k amorphous HfOx thin films at room temperature. The plasma is generated in a remote chamber, allowing higher rate deposition of films with minimal ion damage. Compared to a conventional sputtering system, the HiTUS technique allows finer control of the thin film microstructure. Using a conventional reactive rf magnetron sputtering technique, monoclinic nanocrystalline HfOx thin films have been deposited at a rate of ∼1.6nmmin-1 at room temperature, with a resistivity of 1013Ωcm, a breakdown strength of 3.5MVcm-1 and a dielectric constant of ∼18.2. By comparison, using the HiTUS process, amorphous HfOx (x=2.1) thin films which appear to have a cubic-like short-range order have been deposited at a high deposition rate of ∼25nmmin-1 with a high resistivity of 1014Ωcm, a breakdown strength of 3MVcm-1 and a high dielectric constant of ∼30. Two key conditions must be satisfied in the HiTUS system for high-k HfOx to be produced. Firstly, the correct oxygen flow rate is required for a given sputtering rate from the metallic target. Secondly, there must be an absence of energetic oxygen ion bombardment to maintain an amorphous microstructure and a high flux of medium energy species emitted from the metallic sputtering target to induce a cubic-like short range order. This HfOx is very attractive as a dielectric material for large-area electronic applications on flexible substrates. A remote plasma sputtering process (high target utilization sputtering, HiTUS) has been used to deposit amorphous hafnium oxide with a very high dielectric constant (∼30). X-ray diffraction shows that this material has a microstructure in which the atoms have a cubic-like short-range order, whereas radio frequency (rf) magnetron sputtering produced a monoclinic polycrystalline microstructure. This is correlated to the difference in the energetics of remote plasma and rf magnetron sputtering processes. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

In situ observations of the atomistic mechanisms of Ni catalyzed low temperature graphene growth.

The key atomistic mechanisms of graphene formation on Ni for technologically relevant hydrocarbon exposures below 600 °C are directly revealed via complementary in situ scanning tunneling microscopy and X-ray photoelectron spectroscopy. For clean Ni(111) below 500 °C, two different surface carbide (Ni2C) conversion mechanisms are dominant which both yield epitaxial graphene, whereas above 500 °C, graphene predominantly grows directly on Ni(111) via replacement mechanisms leading to embedded epitaxial and/or rotated graphene domains. Upon cooling, additional carbon structures form exclusively underneath rotated graphene domains. The dominant graphene growth mechanism also critically depends on the near-surface carbon concentration and hence is intimately linked to the full history of the catalyst and all possible sources of contamination. The detailed XPS fingerprinting of these processes allows a direct link to high pressure XPS measurements of a wide range of growth conditions, including polycrystalline Ni catalysts and recipes commonly used in industrial reactors for graphene and carbon nanotube CVD. This enables an unambiguous and consistent interpretation of prior literature and an assessment of how the quality/structure of as-grown carbon nanostructures relates to the growth modes.