Optical, electrical and structural characterization of ZnO:Al thin films prepared by a low cost sol-gel method

ZnO:Al thin films were prepared on glass and silicon substrates by the sol-gel spin coating method. The x-ray diffraction (XRD) results showed that a polycrystalline phase with a hexagonal structure appeared after annealing at 400 degrees C for 1 h. The transmittance increased from 91 to about 93% from pure ZnO films to ZnO film doped with 1 wt% Al and then decreased for 2 wt% Al. The optical band gap energy increased as the doping concentration was increased from 0.5 wt% to 1 wt% Al. The metal oxide semiconductor (MOS) capacitors were fabricated using ZnO films deposited on silicon (100) substrates and electrical properties such as current versus voltage (I-V) and capacitance versus voltage (C-V) characteristics were studied. The electrical resistivity decreased and the leakage current increased with an increase of annealing temperature. The dielectric constant was found to be 3.12 measured at 1 MHz. The dissipation value for the film annealed at 300 degrees C was found to be 3.1 at 5 V. (C) 2011 Elsevier Ltd. All rights reserved.

Optical properties change in Sb40S40Se20 thin films by light-induced effect

Thin films of Sb40Se20S40 with thickness 1000 nm were prepared by thermal evaporation technique. The amorphous nature of the thin films was verified by X-ray diffractometer. The chemical composition of the deposited thin films was examined by energy dispersive X-ray analysis (EDAX). The changes in optical properties due to the influence of laser radiation on amorphous thin films of Sb40Se20S40 glassy alloy were calculated from absorbance spectra as a function of photon energy in the wavelength region 450-900 nm. Analysis of the optical absorption data shows that the rule of non-direct transitions predominates. It has been observed that laser-irradiation of the films leads to a decrease in optical band gap while increase in absorption coefficient. The decrease in the optical band gap is explained on the basis of change in nature of films due to disorderness. The optical changes are supported by X-ray photoelectron spectroscopy and Raman spectroscopy. (C) 2012 Elsevier B.V. All rights reserved.

Electrical switching and optical studies on amorphous GexSe35-xTe65 thin films

The electrical switching behavior of amorphous GexSe35-xTe65 thin film samples has been studied in sandwich geometry of electrodes. It is found that these samples exhibit memory switching behavior, which is similar to that of bulk Ge-Se-Te glasses. As expected, the switching voltages of GexSe35-xTe65 thin film samples are lower compared to those of bulk samples. In both thin film amorphous and bulk glassy samples, the switching voltages are found to increase with the increase in Ge concentration, which is consistent with the increase in network connectivity with the addition of higher coordinated Ge atoms. A sharp increase is seen in the composition dependence of the switching fields of amorphous GexSe35-xTe65 films above x = 21, which can be associated with the stiffness transition. Further, the optical band gap of a-GexSe35-x Te-65 thin film samples, calculated from the absorption spectra, is found to show an increasing trend with the increase in Ge concentration, which is consistent with the variation of switching fields with composition. The increase in structural cross-linking with progressive addition of 4-fold coordinated Ge atoms is one of the main reasons for the observed increase in switching fields as well as band gaps of GexSe35-xTe65 samples. (C) 2011 Elsevier B.V. All rights reserved.

Optimal static voltage stability improvement using a numerically stable SLP algorithm, for real time applications

A numerically stable sequential Primal–Dual LP algorithm for the reactive power optimisation (RPO) is presented in this article. The algorithm minimises the voltage stability index C 2 [1] of all the load buses to improve the system static voltage stability. Real time requirements such as numerical stability, identification of the most effective subset of controllers for curtailing the number of controllers and their movement can be handled effectively by the proposed algorithm. The algorithm has a natural characteristic of selecting the most effective subset of controllers (and hence curtailing insignificant controllers) for improving the objective. Comparison with transmission loss minimisation objective indicates that the most effective subset of controllers and their solution identified by the static voltage stability improvement objective is not the same as that of the transmission loss minimisation objective. The proposed algorithm is suitable for real time application for the improvement of the system static voltage stability.

Selection of Static VAR Compensator Location and Size for System Voltage Stability Improvement

This paper presents a methodology for selection of static VAR compensator location based on static voltage stability analysis of power systems. The analysis presented here uses the L-index of load buses, which includes voltage stability information of a normal load flow and is in the range of 0 (no load of system) to 1 (voltage collapse). An approach has been presented to select a suitable size and location of static VAR compensator in an EHV network for system voltage stability improvement. The proposed approach has been tested under simulated conditions on a few power systems and the results for a sample radial network and a 24-node equivalent EHV power network of a practical system are presented for illustration purposes. © 2000 Published by Elsevier Science S.A. All rights reserved.

An ANN based approach for voltage stability assessment

Artificial Neural Networks (ANNs) have recently been proposed as an alterative method for salving certain traditional problems in power systems where conventional techniques have not achieved the desired speed, accuracy or efficiency. This paper presents application of ANN where the aim is to achieve fast voltage stability margin assessment of power network in an energy control centre (ECC), with reduced number of appropriate inputs. L-index has been used for assessing voltage stability margin. Investigations are carried out on the influence of information encompassed in input vector and target out put vector, on the learning time and test performance of multi layer perceptron (MLP) based ANN model. LP based algorithm for voltage stability improvement, is used for generating meaningful training patterns in the normal operating range of the system. From the generated set of training patterns, appropriate training patterns are selected based on statistical correlation process, sensitivity matrix approach, contingency ranking approach and concentric relaxation method. Simulation results on a 24 bus EHV system, 30 bus modified IEEE system, and a 82 bus Indian power network are presented for illustration purposes.

Voltage stability : some reflections on Q-V characteristics of loads

Considering voltage stability as a static viability problem, this paper takes a particular concern of Q-V characteristics and reflects on certain notions that do not seem to have been explicitly mentioned or derived in the existing documented literature. The equations of Q-V characteristics are rederived in exactness, some salient points on the curve are discovered and analysed. The results of the analysis are illustrated through a case study