An investigation into the rheological properties of different lead-free solder pastes for surface mount applications

Purpose – The purpose of this paper is to investigate the rheological behaviour of three different lead-free solder pastes used for surface mount applications in the electronic industry.Design/methodology/approach – This study concerns the rheological measurements of solder paste samples and is made up of three parts. The first part deals with the measurement of rhelogical properties with three different measuring geometries, the second part looks into the effect of frequencies on oscillatory stress sweep measurements and the final part reports on the characterisation and comparison of three different types of Pb-free solder pastes. Findings – Among the three geometries, the serrated parallel plate was found effective in minimising the wall-slip effect. From the oscillatory stresssweep data with different frequencies; it was observed that the linear visco-elastic region is independent of frequency for all the solder paste samples. To understand the shear thinning behaviour of solder paste, the well known Cross and Carreau models were fitted to the viscosity data. Moreover,creep-recovery and dynamic frequency-sweep tests were also carried out without destroying the sample’s structure and have yielded useful information on the pastes behaviour.Research limitations/implications – More extensive research is needed to fully characterise the wall-slip behaviour during the rheological measurements of solder pastes. Practical implications – The rheological test results presented in this paper will be of important value for research and development, quality control and facilitation of the manufacturing of solder pastes and flux mediums. Originality/value – This paper shows how wall-slip effects can be effectively avoided during rheological measurements of solder pastes. The paper also outlines how different rheological test methods can be used to characterise solder paste behaviours

Performance assessment of nanoscale double- and triple- gate FinFETs

This is the first paper to describe performance assessment of triple and double gate FinFETs for High Performance (HP), Low Operating Power (LOP) and Low Standby Power (LSTP) logic technologies is investigated. The impact of gate work-function, spacer width, lateral source/drain doping gradient, fin aspect ratio, fin thickness on device performance, has been analysed in detail and guidelines are presented to meet ITRS specification at 65 and 45 nm nodes. Optimal design of lateral source/drain doping profile can not only effectively control short channel effects, yielding low off-current, but also achieve low values of intrinsic gate delay.

Vibrational properties of nanometric AB(2) ionic clusters

A broad survey of harmonic dynamics in AB(2) clusters with up to N = 3000 atoms is performed using a simple rigid ion model, with ionic radii selected to give rutile as the ground state structure for the corresponding extended crystal. The vibrational density of states is already close to its bulk counterpart for N similar to 500, with characteristic differences due to surfaces, edges and vertices. Two methods are proposed and tested to map the cluster vibrational states onto the rutile crystal phonons. The net distinction between infrared (IR) active and Raman active modes that exists for bulk rutile becomes more and more blurred as the cluster size is reduced. It is found that, in general, the higher the IR activity of the mode, the more this is affected by the system size. IR active modes are found to spread over a wide frequency range for the finite clusters. Simple models based on either a crude confinement constraint or surface pressure arguments fail to reproduce the results of the calculations. The effects of the stoichiometry and dielectric properties of the surrounding medium on the vibrational properties of the clusters are also investigated.

Optimal basis set for electronic structure calculations in periodic systems

An efficient method for calculating the electronic structure of systems that need a very fine sampling of the Brillouin zone is presented. The method is based on the variational optimization of a single (i.e., common to all points in the Brillouin zone) basis set for the expansion of the electronic orbitals. Considerations from k.p-approximation theory help to understand the efficiency of the method. The accuracy and the convergence properties of the method as a function of the optimal basis set size are analyzed for a test calculation on a 16-atom Na supercell.

Molecular electrostatic properties of ions in an ionic liquid

We have analysed the electronic wave functions from an ab initio simulation of the ionic liquid (room temperature molten salt) dimethyl imidazolium chloride ([dmim][Cl] or [C1mim][Cl]) using localized Wannier orbitals. This allows us to assign electron density to individual ions. The probability distributions of the ionic dipole moments for an isolated ion and for ions in solution are compared. The liquid environment is found to polarize the cation by about 0.7 D and to increase the amplitude of the fluctuations in the dipole moments of both cation and anion. The relative changes in nuclear and electronic contributions are shown. The implications for classical force fields are discussed.

Transport in nanoscale systems: the microcanonical versus grand-canonical picture

We analyse a picture of transport in which two large but finite charged electrodes discharge across a nanoscale junction. We identify a functional whose minimization, within the space of all bound many-body wavefunctions, defines an instantaneous steady state. We also discuss factors that favour the onset of steady-state conduction in such systems, make a connection with the notion of entropy, and suggest a novel source of steady-state noise. Finally, we prove that the true many-body total current in this closed system is given exactly by the one-electron total current, obtained from time-dependent density-functional theory.

Power dissipation in nanoscale conductors: classical, semi-classical and quantum dynamics

Modelling Joule heating is a difficult problem because of the need to introduce correct correlations between the motions of the ions and the electrons. In this paper we analyse three different models of current induced heating (a purely classical model, a fully quantum model and a hybrid model in which the electrons are treated quantum mechanically and the atoms are treated classically). We find that all three models allow for both heating and cooling processes in the presence of a current, and furthermore the purely classical and purely quantum models show remarkable agreement in the limit of high biases. However, the hybrid model in the Ehrenfest approximation tends to suppress heating. Analysis of the equations of motion reveals that this is a consequence of two things: the electrons are being treated as a continuous fluid and the atoms cannot undergo quantum fluctuations. A means for correcting this is suggested.

Power dissipation in nanoscale conductors

A previous tight-binding model of power dissipation in a nanoscale conductor under an applied bias is extended to take account of the local atomic topology and the local electronic structure. The method is used to calculate the power dissipated at every atom in model nanoconductor geometries: a nanoscale constriction, a one-dimensional atomic chain between two electrodes with a resonant double barrier, and an irregular nanowire with sharp corners. The local power is compared with the local current density and the local density of states. A simple relation is found between the local power and the current density in quasiballistic geometries. A large enhancement in the power at special atoms is found in cases of resonant and anti-resonant transmission. Such systems may be expected to be particularly unstable against current-induced modifications.

A simple model of atomic interactions in noble metals based explicitly on electronic structure

A total energy tight-binding model with a basis of just one s state per atom is introduced. It is argued that this simplest of all tight-binding models provides a surprisingly good description of the structural stability and elastic constants of noble metals. By assuming inverse power scaling laws for the hopping integrals and the repulsive pair potential, it is shown that the density matrix in a perfect primitive crystal is independent of volume, and structural energy differences and equations of state are then derived analytically. The model is most likely to be of use when one wishes to consider explicitly and self-consistently the electronic and atomic structures of a generic metallic system, with the minium of computation expense. The relationship to the free-electron jellium model is described. The applicability of the model to other metals is also considered briefly.

Current-induced forces in atomic-scale conductors

We present a self-consistent tight-binding formalism to calculate the forces on individual atoms due to the flow of electrical current in atomic-scale conductors. Simultaneously with the forces, the method yields the local current density and the local potential in the presence of current flow, allowing a direct comparison between these quantities. The method is applicable to structures of arbitrary atomic geometry and can be used to model current-induced mechanical effects in realistic nanoscale junctions and wires. The formalism is implemented within a simple Is tight-binding model and is applied to two model structures; atomic chains and a nanoscale wire containing a vacancy.

Comparative analysis of nanoscale MOS device architectures for RF applications

This paper provides valuable design insights for optimizing device parameters for nanoscale planar and vertical SOI MOSFETs. The suitability of nanoscale non-planar FinFETs and classical planar single and double gate SOI MOSFETs for rf applications is examined via extensive 3D device simulations and detailed interpretation. The origin of higher parasitic capacitance in FinFETs, compared to planar MOSFETs is examined. RF figures of merit for planar and vertical MOS devices are compared, based on layout-area calculations.

Non-linear electronic transport in Pt nanowires deposited by focused ion beam

Electrical transport and structural properties of platinum nanowires, deposited using the focussed ion beam method have been investigated. Energy dispersive X-ray spectroscopy reveals metal-rich grains (atomic composition 31% Pt and 50% Ga) in a largely non-metallic matrix of C, O and Si. Resistivity measurements (15-300 K) reveal a negative temperature coefficient with the room-temperature resistivity 80-300 times higher than that of bulk Pt. Temperature dependent current-voltage characteristics exhibit non-linear behaviour in the entire range investigated. The conductance spectra indicate increasing non-linearity with decreasing temperature, reaching 4% at 15 K. The observed electrical behaviour is explained in terms of a model for inter-grain tunnelling in disordered media, a mechanism that is consistent with the strongly disordered nature of the nanowires observed in the structure and composition analysis.