Tailoring the Microwave Dielectric Properties of GdTiNb 1 _-xTa,O6 and Sm 1 _X Y,TiTa06 Ceramics

Microwave dielectric ceramics based on GdTiNb,-,.Ta,O6 and Sml _.,Y,TiTa06 have been prepared by conventional solid state method . The GdTiTaO6 and SmTiTaO6 have aeschenite structure with positive rr and GdTiNbO6 and YTiTaO6 have euxenite structure with negative rr. The rr of the ceramics has been tuned by preparing solid solution phases between the aeschynites and euxenites for a possible zero rr material . It is observed that GdTiNbt_YTa.,O6 undergoes a phase transition from aeschynite to euxenite when x=0.75 and in Sml-,YxTiTa06 for x= 0.73. The microwave dielectric properties change abruptly near the transition region . The rr value approaches zero near the phase transition region while the samples have poor sinterability and poor quality factor . The unloaded quality factor, dielectric constant and the sign of rr of the solid solution phases are found to depend on the average ionic radius of the rare earth ion in RE ,-5RE',TiTaO6. The boundary of the euxenite-aeschynite phase transition occurs at an average ( RE) ionic radius of 0.915 A in Sm,_, Y,.TiTaO6 solid solution phases

Studies on Electrical and Thermal Properties of Certain Selected Photonic Materials

The present thesis is centered around the study of electrical and thermal properties of certain selected photonic materials.We have studied the electrical conduction mechanism in various phases of certain selected photonic materials and those associated with different phase transitions occurring in them. A phase transition leaves its own impressions on the key parameters like electrical conductivity and dielectric constant. However, the activation energy calculation reveals the dominant factor responsible for conduction process.PA measurements of thermal diffusivity in certain other important photonic materials are included in the remaining part of the research work presented in this thesis. PA technique is a promising tool for studying thermal diffusivities of solid samples in any form. Because of its crucial role and common occurrence in heat flow problems, the thermal diffusivity determination is often necessary and knowledge of thermal diffusivity can intum be used to calculate the thermal conductivity. Especially,knowledge of the thermal diffusivity of semiconductors is important due to its relation to the power dissipation problem in microelectronic and optoelectronic devices which limits their performances. More than that, the thermal properties, especially those of thin films are of growing interest in microelectronics and microsystems because of the heat removal problem involved in highly integrated devices. The prescribed chapter of the present theis demonstrates how direct measurement of thermal diffusivity can be carried out in thin films of interest in a simple and elegant manner using PA techniques. Although results of only representative measurements viz; thermal diffusivity values in Indium, Aluminium, Silver and CdS thin films are given here, evaluation of this quantity for any photonic and / electronic material can be carried out using this technique in a very simple and straight forward manner.

Modeling premartensitic effects in Ni2MnGa: A mean-field and Monte Carlo simulation study

ic first-order transition line ending in a critical point. This critical point is responsible for the existence of large premartensitic fluctuations which manifest as broad peaks in the specific heat, not always associated with a true phase transition. The main conclusion is that premartensitic effects result from the interplay between the softness of the anomalous phonon driving the modulation and the magnetoelastic coupling. In particular, the premartensitic transition occurs when such coupling is strong enough to freeze the involved mode phonon. The implication of the results in relation to the available experimental data is discussed.