AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm(2)) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (lambda = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

Power Converter Topologies for a High Performance Transformer Rectifier Unit in Aircraft Applications

This paper presents some power converter architectures and circuit topologies, which can be used to achieve the requirements of the high performance transformer rectifier unit in aircraft applications, mainly as: high power factor with low THD, high efficiency and high power density. The voltage and the power levels demanded for this application are: three-phase line-to-neutral input voltage of 115 or 230V AC rms (360 – 800Hz), output voltage of 28V DC or 270V DC(new grid value) and the output power up to tens of kilowatts.

A novel high-sensitivity, low-power, liquid crystal temperature sensor

A novel temperature sensor based on nematic liquid crystal permittivity as a sensing magnitude, is presented. This sensor consists of a specific micrometric structure that gives considerable advantages from other previous related liquid crystal (LC) sensors. The analytical study reveals that permittivity change with temperature is introduced in a hyperbolic cosine function, increasing the sensitivity term considerably. The experimental data has been obtained for ranges from −6 °C to 100 °C. Despite this, following the LC datasheet, theoretical ranges from −40 °C to 109 °C could be achieved. These results have revealed maximum sensitivities of 33 mVrms/°C for certain temperature ranges; three times more than of most silicon temperature sensors. As it was predicted by the analytical study, the micrometric size of the proposed structure produces a high output voltage. Moreover the voltage’s sensitivity to temperature response can be controlled by the applied voltage. This response allows temperature measurements to be carried out without any amplification or conditioning circuitry, with very low power consumption.

A voltage disturbances prototype for testing electrical generators connected to microgrids

The search for new energy models arises as a necessity to have a sustainable power supply. The inclusion of distributed generation sources (DG) allows to reduce the cost of facilities, increase the security of the grid or alleviate problems of congestion through the redistribution of power flows. In remote microgrids it is needed in a particular way a safe and reliable supply, which can cover the demand for a low cost; due to this, distributed generation is an alternative that is being widely introduced in these grids. But the remote microgrids are especially weak grids because of their small size, low voltage level, reduced network mesh and distribution lines with a high ratio R/X. This ratio affects the coupling between grid voltages and phase shifts, and stability becomes an issue of greater importance than in interconnected systems. To ensure the appropriate behavior of generation sources inserted in remote microgrids -and, in general, any electrical equipment-, it is essential to have devices for testing and certification. These devices must, not only faithfully reproduce disturbances occurring in remote microgrids, but also to behave against the equipment under test (EUT) as a real weak grid. This also makes the device commercially competitive. To meet these objectives and based on the aforementioned, it has been designed, built and tested a voltage disturbances generator, in order to provide a simple, versatile, full and easily scalable device to manufacturers and laboratories in the sector.

Implications of redesigned, high-radiative-efficiency GaInP junctions on III-V multijunction concentrator solar cells

Nonradiative recombination in inverted GaInP junctions is dramatically reduced using a rear-heterojunction design rather than the more traditional thin-emitter homojunction design. When this GaInP junction design is included in inverted multijunction solar cells, the high radiative efficiency translates into both higher subcell voltage and high luminescence coupling to underlying subcells, both of which contribute to improved performance. Subcell voltages within two and four junction devices are measured by electroluminescence and the internal radiative efficiency is quantified as a function of recombination current using optical modeling. The performance of these concentrator multijunction devices is compared with the Shockley–Queisser detailed-balance radiative limit, as well as an internal radiative limit, which considers the effects of the actual optical environment in which a perfect junction may exist.