Point defects in III-V compound semiconductors

Point defects in III-V compound semiconductors were analyzed systematically in this paper. The effects of substitutes, antisites, interstitials, and vacancies on lattice parameters in III-V compound semiconductors were calculated with a simple model. The formation energies of vacancies in compound semiconductors can be obtained by this calculation. A practical technique established on this model has been utilized for measuring the stoichiometry in GaAs. The relationship between stoichiometry and deep level centers in GaAs was also investigated.

Studies of high DC current induced degradation in III-V nitride based heterojunctions

We report experiments on high de current stressing in commercial III-V nitride based heterojunction light-emitting diodes. Stressing currents ranging from 100 mA to 200 mA were used. Degradations in the device properties were investigated through detailed studies of the current-voltage (I-V) characteristics, electroluminescence, deep-level transient Fourier spectroscopy and flicker noise. Our experimental data demonstrated significant distortions in the I-V characteristics subsequent to electrical stressing. The room temperature electro-luminescence of the devices exhibited a 25% decrement in the peak emission intensity. Concentration of the deep-levels was examined by deep-level transient Fourier spectroscopy, which indicated an increase in the density of deep-traps from 2.7 x 10(13) cm(-3) to 4.2 x 10(13) cm(-3) at E-1 = E-C - 1.1 eV. The result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. These traps are typically located at energy levels beyond the range that can be characterized by conventional techniques including DLTS. The two experiments, therefore, provide a more complete picture of trap generation due to high dc current stressing.

Refractive index dispersion measurement on nonlinear optical polymer using V-prism refractometer

By using V-prism refractometer, the refractive indices of a polyetherketone (PEK-c) guest-host polymer system were measured with the polymer in solutions. The Lorenz-Lorentz local field formalism was used in the calculation of the refractive indices of the polymers from the measured indices of the polymer solutions and the pure solvent by using V-prism refractometer. The refractive index dispersions of the polymers were obtained by fitting the measured indices of the polymers to Sellmeyer equation. The method allows for an accuracy in index of 0.7% in the determination of the polymer indices. In addition, a large difference between the indices of the polymer and the solvent, and a higher polymer volume fraction in the measured polymer solution are favorable for a high accuracy. (C) 2000 Elsevier Science Ltd. All rights reserved.

Kinetic study of MOCVD III-V quaternary antimonides

The kinetics of MOCVD GaInAsSb and AlGaAsSb was studied by the growth rate as a function of growth temperature and partial pressure of III and V MO species. The diffusion theory was used to explain the mass transport processes in MOCVD III-V quaternary antimonides. On the basis of the discussion about their growth kinetics and epilayer properties, the good quality multi-epilayers of these two quaternary antimonides and their photodetectors and arrays with wavelength of 1.8 similar to 2.3 mu m and detectivities of D* > 10(9) cm Hz(1/2) W-1 were obtained.

Raman scattering studies of III-V semiconductors grown on [n11]-oriented substrates

The room temperature Raman spectra of the Ga(0.5)Al(0.5)AS and the In0.52Al0.48As epilayer grown on [n11]-oriented substrates were measured in various back scatterng geometries, The relative intensity of TO modes and LO modes in those samples shows a regular Variation with differently oriented substrates in the experiments. By comparing experimental data with Raman scattering selection rules for the zincblende structure epilayer grown on [n11]-oriented substrates, it was found that the present calculations are in good agreement with the experimental results.

Mossbauer spectroscopy study of Fe-57 in R3Fe29-xTx (R=Y, Ce, Nd, Sm, Gd, Tb and Dy; T=V and Cr)

Fe-57 Mossbauer spectra for the Fe atoms in the R3Fe29-xTx (R=Y, Ce, Nd, Sm, Gd, Tb, Dy; T=V, Cr) compounds were collected at 4.2 K. The analysis of Mossbauer spectra was based on the results of magnetization and neutron powder diffraction measurements. The average Fe magnetic moments at 4.2 K, deduced from our data, are in accord with magnetization measurements. The average hyperfine field of Tb3Fe29-xCrx (x=1.0, 1.5, 2.0, and 3.0) decreases with increasing Cr concentration, which is also in accordance with the variation of the average Fe magnetic moment in the Tb3Fe29-xCrx compounds.

Crystallographic and magnetic properties of hydride R3Fe29-xTxHy (R=Y, Ce, Nd, Sm, Gd, Tb and Dy; T=V and Cr)

The crystallographic and intrinsic magnetic properties of hydride R3Fe29-xTxHy (R=Y, Ce, Nd, Sm, Gd, Tb, and Dy; T=V and Cr) have been investigated. The lattice constants and the unit cell volume of R3Fe29-xTxHy decrease with increasing R atomic number from Nd to Dy, except for Ce, reflecting the lanthanide contraction. Regular anisotropic expansions, mainly along the a- and b-axis rather than along the c-axis, are observed for all the compounds upon hydrogenation. Hydrogenation leads to an increase in Curie temperature. First-order magnetization processes (FOMP) occur in magnetic fields of around 1.5 T and 4.0 T at 4.2 K for Nd3Fe24.5Cr4.5H5.0 and Tb(3)Fc(27.0)Cr(2.0)H(2.8), and around 1.4 T at room temperature for Gd3Fe28.0Cr1.0H4.2 Abnormal crystallographic and magnetic properties of Ce3Fe29-xTxHy suggest that the Ce ion is non-triply ionized.

Characterization of hot-electron effects on flicker noise in III-V nitride based heterojunctions

We report experiments on hot-electron stressing in commercial III-V nitride based heterojunction fight-emitting diodes. Stressing currents ranging from 100 mA to 200 mA were used. Degradations in the device properties were investigated through detailed studies of the I-V characteristics, electroluminescence, Deep-Level Transient Fourier Spectroscopy and flicker noise. Our experimental data demonstrated significant distortions in the I-V characteristics. The room temperature electroluminescence of the devices exhibited 25% decrement in the peak emission intensity. Concentration of the deep-levels was examined by measuring the Deep-Level Transient Fourier Spectroscopy, which indicated an increase in the density of deep-traps from 2.7 x 10(13) cm(-3) to 4.21 x 10(13) cm(-3) at E-1 = E-C - 1.1eV. The result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. Our experiments show large increase in both the interface traps and deep-levels resulted from hot-carrier stressing.

Hydrogenation and anisotropic expansions in R3Fe29-xTx (R = Y, Ce, Nd, Sm, Gd, Tb and Dy; T = V and Cr)

A systematic study of the phase formation, structure and magnetic properties of the R3Fe29-xTx compounds (R=Y, Ce, Nd, Sm, Gd, Tb, and Dy; T=V and Cr) has been performed upon hydrogenation. The lattice constants and the unit cell volume of R3Fe29-xTxHy decrease with increasing R atomic number from Nd to Dy, except for Ce, reflecting the lanthanide contraction. Regular anisotropic expansions mainly along the a- and b-axis rather than along the c-axis are observed for all of the compounds upon hydrogenation. Hydrogenation leads to an increase in the Curie temperature and a corresponding increase in the saturation magnetization at room temperature for each compound. First order magnetization processes (FOMP) occur in the external magnetic fields for Nd3Fe24.5Cr4.5H5.0, Tb3Fe27.0Cr2.0H2.8, and Gd3Fe28.0Cr1.0H4.2 compounds.

Thermomagnetic behavior and first order magnetization processes of Sm3Fe29-xTx and Sm3Fe29-xTxN4 (T = V and Cr)

A systematic investigation of structure and intrinsic magnetic properties of the compounds Sm3Fe29-xTx (T = V and Cr) and their nitrides has been performed. Nitrogenation resulted in remarkable improvements in the saturation magnetization and anisotropy fields at 4.2 K and room temperature. First order magnetization processes are observed at around 5.7 T for Sm3Fe26.7V2.3 and around 2.8 T for Sm3Fe24.0Cr5.0 and Sm3Fe24.0Cr5.0N4, respectively. The spin reorientation of the easy magnetization direction of Sm3Fe26.7V2.3 is observed at around 230 K. As a preliminary result, the maximum remanence B-r of 0.94 T, the coercivity mu(0)H(C) of 0.75 T, and the maximum energy product (BH) of 108.5 kJ/m(3) for the nitride magnet Sm3Fe26.7V2.3N4 are achieved by ball-milling at 293 K.

Quantum-confined Stark effects of exciton states in V-shaped GaAs/AlxGa1-xAs quantum wires

Quantum-confined Stark effects are investigated theoretically in GaAs/AlxGa1-xAs quantum wires formed in V-grooved structures. The electronic structures of the V-shaped quantum wires are calculated within the effective mass envelope function theory in the presence of electric field. The binding energies of excitons are also studied by two-dimensional Fourier transformation and variational method. The blue Stark shifts are found when the electric field is applied in the growth direction. A possible mechanism in which the blueshifts of photoluminescence peaks are attributed to two factors, one factor comes from the asymmetric structure of quantum wire along the electric field and another factor arises from the electric-field-induced change of the Coulomb interaction. The numerical results are compared with the recent experiment measurement.

Characterization of GaSb substrate wafers for MOCVD III-V antimonides

The qualities of GaSb substrates commonly used for the preparation of III-V antimonide epilayers were studied before and after growing GaInAsSb multi-layers by MOCVD using PL, FTIR and DCXD together with the electrical properties and EPD value. The correlation between the substrate qualities and epilayer properties was briefly discussed. The good property epilayers of GaInAsSb and, then, the high preformance of 2.3 um photodetectors were achieved only using the good quality GaSb wafers as the substrates.

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Design and Fabrication of Low-microwave loss Coplannar Waveguide and precise V groove on Silicon Substrate for Optoelectronic Packaging - art. no. 601938

Optoelectronic packaging has become a most important factor that influences the final performance and cost of the module. In this paper, low microwave loss coplanar waveguide(CPW) on high resistivity silicon(HRS) and precise V groove in silicon substrate were successfully fabricated. The microwave attenuation of the CPW made on HRS with the simple process is lower than 2 dB/cm in the frequency range of 0 similar to 26GHz, and V groove has the accuracy in micro level and smooth surface. These two techniques built a good foundation for high frequency packaging and passive coupling of the optoelectronic devices. Based on these two techniques, a simple high resistivity silicon substrate that integrated V groove and CPW for flip-chip packaging of lasers was completed. It set a good example for more complicate optoelectronic packaging.

Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices

Various techniques on the growth of self-assembled compound semiconductor nano-structures (quantum dots, QDs) have been tried to enhance the controlling on size, density, emitting wavelength, uniformity in size and ordering in location of the QDs. Optimized growth conditions have been used in the application of the QD materials in opto-electronic devices. High-power long-lifetime quantum-dot laser-diodes (QD-LDs) emitting near 1 mu m, QD-LDs emitting in red-light range, 1.3 mu m QD-LDs on GaAs substrate and quantum-dot super-luminescent diodes (QD-SLDs) have successfully been achieved.