Thickness control of Molecular Beam Epitaxy grown layers at the 0.01-0.1 monolayer level

Electron tunnelling through semiconductor tunnel barriers is exponentially sensitive to the thickness of the barrier layer, and in the most common system, the AlAs tunnel barrier in GaAs, a one monolayer variation in thickness results in a 300% variation in the tunnelling current for a fixed bias voltage. We use this degree of sensitivity to demonstrate that the level of control at 0.06 monolayer can be achieved in the growth by molecular beam epitaxy, and the geometrical variation of layer thickness across a wafer at the 0.01 monolayer level can be detected.

Application of level II reliability theory

Level II reliability theory provides an approximate method whereby the reliability of a complex engineering structure which has multiple strength and loading variables may be estimated. This technique has been applied previously to both civil and offshore structures with considerable success. The aim of the present work is to assess the applicability of the method for aircraft structures, and to this end landing gear design is considered in detail. It is found that the technique yields useful information regarding the structural reliability, and further it enables the critical design parameters to be identified.