A novel heavily doped drift-auxiliary cathode lateral insulated gate transistor structure

A novel CMOS-compatible, heavily doped drift auxiliary cathode lateral insulated gate transistor (HDD-ACLIGT) structure is analyzed using two-dimensional device simulation techniques. Simulation results indicate that low on-resistance and a fast turn-off time of less than 50 ns can be achieved by incorporating an additional n+ region which is self-aligned to the gate between the p+ auxiliary cathode and the p well, together with an extended p buried layer in an anode-shorted modified lateral insulated gate transistor (MLIGT) structure. The on-state and its transient performance are analyzed in detail. The on-state performances of the HDD-ACLIGT and the MLIGT are compared and discussed. The results indicate that the HDD-ACLIGT structure is well suited for HVICs. The device is also well suited for integration with self-aligned digital CMOS.

Development of an Active Superconducting Magnetic Bearing

The potential use of YBa2Cu3C7as an active component in a magnetic bearing is being investigated. Measurements are being made of the load bearing capacity and related stiffnesses in comparison to predictions from the critical state model. Although the load bearing capacity is high and increases with the square of the magnetic field trapped the stiffness is low. We report on a novel design concept to overcome this problem. © 1995 IEEE

Stepped gate polysilicon thin film transistor for large area power applications

For the first time, we report a new poly-Si stepped gate Thin Film Transistor (SG TFT) on glass. The Density of States extracted from measured I-V characteristics has been used to evaluate the device performance with a two dimensional device simulator. The results show that the three-terminal SG TFT device has a switching speed comparable to a low voltage structure and the high on-current capability of a metal field plate (MFP) TFT and the potential for comparable breakdown characteristics.

The use of C-V techniques to investigate instability mechanisms in M-I-S structures

In the field of flat panel displays, the current leading technology is the Active Matrix liquid Crystal Display; this uses a-Si:H based thin film transistors (TFTs) as the switching element in each pixel. However, under gate bias a-Si:H TFTs suffer from instability, as is evidenced by a shift in the gate threshold voltage. The shift in the gate threshold voltage is generally measured from the gate transfer characteristics, after subjecting the TFT to prolonged gate bias. However, a major drawback of this measurement method is that it cannot distinguish whether the shift is caused by the change in the midgap states in the a-Si:H channel or by charge trapping in the gate insulator. In view of this, we have developed a capacitance-voltage (C-V) method to measure the shift in threshold voltage. We employ Metal-Insulator-Semiconductor (MIS) structures to investigate the threshold voltage shift as they are simpler to fabricate than TFTs. We have investigated a large of number Metal/a-Si:H/Si3N4/Si+n structures using our C-V technique. From, the C-V data for the MIS structures, we have found that the relationship between the thermal energy and threshold voltage shift is similar to that reported by Wehrspohn et. al in a-Si:H TFTs (J Appl. Phys, 144, 87, 2000). The a-Si:H and Si3N4 layers were grown using the radio-frequency plasma-enhanced chemical vapour deposition technique.

Active roll control of an experimental articulated vehicle

A new experimental articulated vehicle with computer-controlled suspensions is used to investigate the benefits of active roll control for heavy vehicles. The mechanical hardware, the instrumentation, and the distributed control architecture are detailed. A simple roll-plane model is developed and validated against experimental data, and used to design a controller based on lateral acceleration feedback. The controller is implemented and tested on the experimental vehicle. By tilting both the tractor drive axle and the trailer inwards, substantial reductions in normalized lateral load transfer are obtained, both in steady state and transient conditions. Power requirements are also considered. © IMechE 2005.

Modeling of MOS-side carrier injection in trench-gate IGBTs

A compact trench-gate IGBT model that captures MOS-side carrier injection is developed. The model retains the simplicity of a one-dimensional solution to the ambipolar diffusion equation, but at the same time captures MOS-side carrier injection and its effects on steady-state carrier distribution in the drift region and on switching waveforms. © 2007 IEEE.

Implementation of semi-active damping on a tri-axle heavy-vehicle suspension

A semi-active truck damper was developed in conjunction with a commercial shock absorber manufacturer. A linearized damper model was developed for control system design purposes. Open- and closed-loop damper force tracking control was implemented, with tests showing that an open-loop approach gave the best compromise between response speed and accuracy. A hardware-in-the-loop test facility was used to investigate performance of the damper when combined with a simulated quarter-car model. The input to the vehicle model was a set of randomly generated road profiles, each profile traversed at an appropriate speed. Modified skyhook damping tests showed a simultaneous improvement over the optimum passive case of 13 per cent in vertical body acceleration and 8 per cent in dynamic tyre forces. Full-scale vehicle tests of the damper on a heavy tri-axle trailer were carried out. Implementation of modified skyhook damping yielded a simultaneous improvement over the optimum passive case of 8 per cent in vertical body acceleration and 8 per cent in dynamic tyre forces. © IMechE 2008.

An experimental semi-active anti-roll system

The use of anti-roll bars to provide additional roll stiffness and therefore to reduce the trade-off between ride and rollover performance has previously been studied. However, little work has been carried out to investigate the benefits of a switchable roll stiffness. Such a semi-active anti-roll system has the ability to have a low roll stiffness during straight-ahead driving for improved ride performance and high roll stiffness during cornering for improved roll performance. Modelling of such a system is conducted and the model is validated against a semi-active anti-roll system fitted to an experimental vehicle. Experimental and theoretical investigations are used to investigate the performance of such a system with several different strategies employed to switch to the high-stiffness state. The use of an air suspension on the vehicle to roll into corners is also investigated, as is the possibility of exploiting the road layout by allowing the vehicle to be in a low-roll-stiffness configuration during a corner, and then to switch to the high-roll-stiffness configuration midcorner, hence 'locking in' a roll angle. The best rollover performance improvement that was achieved was 12.5 per cent. © IMechE 2008.

Soft turn-on of NPT IGBT under Active Voltage Control

In this paper the soft turn-on of NPT IGBT under Active Voltage Control (AVC) is presented. The AVC technique is able to control the IGBT switching trajectory according to a pre-defined reference signal generated by a FPGA chip. By applying a special designed reference signal at turn-on, the IGBT turn-on current overshoot and diode recovery can be optimized. Experiments of soft turn-on with different reference signal are presented in this paper. This technique can be used to reduce the switching stress on the device and on other components of the circuit. © 2011 IEEE.

An analysis of the cooperative mechano-sensitive feedback between intracellular signaling, focal adhesion development, and stress fiber contractility

Cells communicate with their external environment via focal adhesions and generate activation signals that in turn trigger the activity of the intracellular contractile machinery. These signals can be triggered by mechanical loading that gives rise to a cooperative feedback loop among signaling, focal adhesion formation, and cytoskeletal contractility, which in turn equilibrates with the applied mechanical loads. We devise a signaling model that couples stress fiber contractility and mechano-sensitive focal adhesion models to complete this above mentioned feedback loop. The signaling model is based on a biochemical pathway where IP3 molecules are generated when focal adhesions grow. These IP3 molecules diffuse through the cytosol leading to the opening of ion channels that disgorge Ca2+ from the endoplasmic reticulum leading to the activation of the actin/myosin contractile machinery. A simple numerical example is presented where a one-dimensional cell adhered to a rigid substrate is pulled at one end, and the evolution of the stress fiber activation signal, stress fiber concentrations, and focal adhesion distributions are investigated. We demonstrate that while it is sufficient to approximate the activation signal as spatially uniform due to the rapid diffusion of the IP3 through the cytosol, the level of the activation signal is sensitive to the rate of application of the mechanical loads. This suggests that ad hoc signaling models may not be able to capture the mechanical response of cells to a wide range of mechanical loading events. © 2011 American Society of Mechanical Engineers.