967 resultados para rf sputtering


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Lab-on-a-chip (LOC) is one of the most important microsystem applications with promise for use in microanalysis, drug development, diagnosis of illness and diseases etc. LOC typically consists of two main components: microfluidics and sensors. Integration of microfluidics and sensors on a single chip can greatly enhance the efficiency of biochemical reactions and the sensitivity of detection, increase the reaction/detection speed, and reduce the potential cross-contamination, fabrication time and cost etc. However, the mechanisms generally used for microfluidics and sensors are different, making the integration of the two main components complicated and increases the cost of the systems. A lab-on-a-chip system based on a single surface acoustic wave (SAW) actuation mechanism is proposed. SAW devices were fabricated on nanocrystalline ZnO thin films deposited on Si substrates using sputtering. Coupling of acoustic waves into a liquid induces acoustic streaming and motion of droplets. A streaming velocity up to ∼ 5cm/s and droplet pumping speeds of ∼lcm/s were obtained. It was also found that a higher order mode wave, the Sezawa wave is more effective in streaming and transportation of microdroplets. The ZnO SAW sensor has been used for prostate antigen/antibody biorecognition systems, demonstrated the feasibility of using a single actuation mechanism for lab-on-a-chip applications. © 2010 Materials Research Society.

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The aim of this paper is to describe the growth and optimization of carbon nanotube (CNT) and CNT/Zinc Oxide nanostructures to produce novel electron sources. The emitters studied in this project are based on regular array of vertically aligned 5 μm height and 50 nm diameter CNTs with a pitch of 10 μm as described previously (1). Such a cathode design allows us to minimize electric field shielding effects and thus to help in optimizing the emitted current density. We have previously obtained a current density of 1 A/cm 2 from such arrays in DC mode, and over 12 A/cm2 in pulsed mode at RF frequencies. © 2010 IEEE.

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Zinc oxide (ZnO) thin films were deposited at high rates ( > 50 nm min-1) using a unique technique known as high target utilisation sputtering (HiTUS). The films obtained possess good crystallographic orientation, low surface roughness, very low stress and excellent piezoelectric properties. We have utilised the films to develop highly sensitive biosensors based on thickness longitudinal mode (TLM) thin film bulk acoustic resonators (FBARs). The FBARs have the fundamental TLM at a frequency near 1.5 GHz and quality factor Q higher than 1,000, which is one of the largest values ever reported for ZnO-based FBARs. Bovine Serum Albumin (BSA) solutions with different concentrations were placed on the top of different sets of identical FBARs and their responses to mass-loading from physically adsorbed protein coatings were investigated. These resonators demonstrated a high sensitivity and thus have a great potential as gravimetric sensors for biomedical applications. © 2011 Inderscience Enterprises Ltd.

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YBCO thin films are currently used in several HTS-based electronics applications. The performance of devices, which may include microwave passive components (filters, resonators), grain boundary junctions or spintronic multilayer structures, is determined by film quality, which in turn depends on the deposition technology used and growth parameters. We report on results from nonintrusive Optical Emission Spectroscopy of the plasma during YBCO thin film deposition in a high-pressure on-axis sputtering system under different conditions, including small trace gas additions to the sputtering gas. We correlate these results with the compositional and structural changes which affect the DC and microwave properties of YBCO films. Film morphology, composition, structure and in- and out-of-plane orientation were assessed; T, and microwave surface resistance measurements were made using inductive and resonator techniques. Comparison was made with films sputtered in an off-axis 2-opposing magnetron system.

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A constitutive equation is developed for geometrically-similar sharp indentation of a material capable of elastic, viscous, and plastic deformation. The equation is based on a series of elements consisting of a quadratic (reversible) spring, a quadratic (time-dependent, reversible) dashpot, and a quadratic (time-independent, irreversible) slider-essentially modifying a model for an elastic-perfectly plastic material by incorporating a creeping component. Load-displacement solutions to the constitutive equation are obtained for load-controlled indentation during constant loading-rate testing. A characteristic of the responses is the appearance of a forward-displacing "nose" during unloading of load-controlled systems (e.g., magnetic-coil-driven "nanoindentation" systems). Even in the absence of this nose, and the associated initial negative unloading tangent, load-displacement traces (and hence inferred modulus and hardness values) are significantly perturbed on the addition of the viscous component. The viscous-elastic-plastic (VEP) model shows promise for obtaining material properties (elastic modulus, hardness, time-dependence) of time-dependent materials during indentation experiments.

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Real-time acquisition of EMG during functional MRI (fMRI) provides a novel method of controlling motor experiments in the scanner using feedback of EMG. Because of the redundancy in the human muscle system, this is not possible from recordings of joint torque and kinematics alone, because these provide no information about individual muscle activation. This is particularly critical during brain imaging because brain activations are not only related to joint torques and kinematics but are also related to individual muscle activation. However, EMG collected during imaging is corrupted by large artifacts induced by the varying magnetic fields and radio frequency (RF) pulses in the scanner. Methods proposed in literature for artifact removal are complex, computationally expensive, and difficult to implement for real-time noise removal. We describe an acquisition system and algorithm that enables real-time acquisition for the first time. The algorithm removes particular frequencies from the EMG spectrum in which the noise is concentrated. Although this decreases the power content of the EMG, this method provides excellent estimates of EMG with good resolution. Comparisons show that the cleaned EMG obtained with the algorithm is, like actual EMG, very well correlated with joint torque and can thus be used for real-time visual feedback during functional studies.

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The Internet of Things (IOT) concept and enabling technologies such as RFID offer the prospect of linking the real world of physical objects with the virtual world of information technology to improve visibility and traceability information within supply chains and across the entire lifecycles of products, as well as enabling more intuitive interactions and greater automation possibilities. There is a huge potential for savings through process optimization and profit generation within the IOT, but the sharing of financial benefits across companies remains an unsolved issue. Existing approaches towards sharing of costs and benefits have failed to scale so far. The integration of payment solutions into the IOT architecture could solve this problem. We have reviewed different possible levels of integration. Multiple payment solutions have been researched. Finally we have developed a model that meets the requirements of the IOT in relation to openness and scalability. It supports both hardware-centric and software-centric approaches to integration of payment solutions with the IOT. Different requirements concerning payment solutions within the IOT have been defined and considered in the proposed model. Possible solution providers include telcos, e-payment service providers and new players such as banks and standardization bodies. The proposed model of integrating the Internet of Things with payment solutions will lower the barrier to invoicing for the more granular visibility information generated using the IOT. Thus, it has the potential to enable recovery of the necessary investments in IOT infrastructure and accelerate adoption of the IOT, especially for projects that are only viable when multiple benefits throughout the supply chain need to be accumulated in order to achieve a Return on Investment (ROI). In a long-term perspective, it may enable IT-departments to become profit centres instead of cost centres. © 2010 - IOS Press and the authors. All rights reserved.

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We described the derivation of four stable pluripotent rabbit embryonic stem cell ( ESC) lines, one ( RF) from blastocysts fertilized in vivo and cultured in vitro and three ( RP01, RP02, and RP03) from parthenogenetic blastocysts. These ESC lines have be

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Fishes of the genus Crossocheilus in China is reviewed on the basis of specimens in Kunming Institute of Zoology, Chinese Academy of Sciences. Crossocheilus multirastellus is described from the upper Irrawaddy and upper Salween rivers. It is distinguished from all of its congeners by having two black longitudinal stripes on sides of body, 36-38 lateral line scales, 18-25 gill rakers, anus at midpoint between ventral fin and anal fin insertions, ventral fin extending over anus, a large deep blue rhomboid spot above the pectoral fin, and a straight mouth gape almost equal to head width. There are presently two species of Crossocheilus fishes in China. Crossocheilus bamaensis Fang and Crossocheilus liuchengensis Liang, Liu & Wu are recognized here as members of the genus Sinocrossocheilus.

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The nominal invalidity of the cyprinid genus, Parasinilabeo, with descriptions of a new genus and species. Zoological Studies 40(2): 134-140. A new genus, Pararectoris Su, Yang and Cui, is designated based on the type species, Pararectoris assimilis (Wu a

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All Sinocrossocheilus species, except S. microstomatus, are reviewed. Four new species, S. labiata, S. papillolabra, S. nigrovittata, and S. longibulla, are described. The genus Sinocrossocheilus differs from other genera of Cyprinidae by the last simple dorsal fin ray being unserrated and unossified, the last unbranched anal fin ray being unserrated and unossified, the 5-branched anal fin rays, the mouth gap being inferior, the rostral cap covering the lower jaw and connecting directly with the lower lip, a row of fleshy lobes on the lower jaw, and a cloudy black spot above the pectoral fin. Sinocrossocheilus labiata is small and has 22 predorsal scales; S. longibulla has a very large air bladder; S. papillolabra possesses a well-developed ventral fin and a wide band covered by fleshy papillae on the lower lip; and S. nigrovittata possesses black longitudinal stripes along the lateral line. Crossocheilus bamaensis and Crossocheilus liuchengensis are transferred to the genus Sinocrossocheilus. Sinocrossocheilus species are endemic to the central and eastern Yunnan-Guizhou Plateau of China, where river systems are anfractuous, including seasonal rivers, cave rivers, underground rivers, and streamlets between mountains. These separated rivers probably provide conditions for the allopatric speciation of the Sinocrossocheilus.

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The fabrication of high frequency acoustic wave devices requires thedevelopment of thin films of piezoelectric materials with improved morphologicaland electro-acoustical properties. In particular, the crystalline orientationof the films, surface morphology, film stress and electrical resistivity are keyissues for the piezoelectric response. In the work reported here, ZnO thinfilms were deposited at high rates (>50 nm/min) using a novel process knownas the High Target Utilisation Sputtering (HiTUS). The films deposited possessexcellent crystallographic orientation, high resistivity (>109ωm), and exhibit surface roughness and film stress one order of magnitudelower than films grown with standard magnetron sputtering. The electromechanicalcoupling coefficient of the films, kT, was precisely calculated byimplementing the resonant spectrum method, and was found to be at least 6%higher than any previously reported kT of magnetron sputtered filmsto the Authors' knowledge. The low film stress of the film is deemed as one ofthe most important factors responsible for the high k T valueobtained. © 2010 IEEE.

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With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu2O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu2O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu2O films are reported. It is known from previously published work that the formation of pure Cu2O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu2O thin films (as opposed to CuO or mixed phase CuO/Cu2O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu2O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu2O films with electrical resistivity ranging from 102 to 104 Ω-cm, hole mobility of 1-10 cm2/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu 2O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu2O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells. © 2011 Elsevier B.V. All rights reserved.