A Novel Micro- and Nano-Scale Positioning Sensor Based on Radio Frequency Resonant Cavities

In many micro- and nano-scale technological applications high sensitivity displacement sensors are needed, especially in ultraprecision metrology and manufacturing. In this work a new way of sensing displacement based on radio frequency resonant cavities is presented and experimentally demonstrated using a first laboratory prototype. The principle of operation of the new transducer is summarized and tested. Furthermore, an electronic interface that can be used together with the displacement transducer is designed and proved. It has been experimentally demonstrated that very high and linear sensitivity characteristic curves, in the range of some kHz/nm; are easily obtainable using this kind of transducer when it is combined with a laboratory network analyzer. In order to replace a network analyzer and provide a more affordable, self-contained, compact solution, an electronic interface has been designed, preserving as much as possible the excellent performance of the transducer, and turning it into a true standalone positioning sensor. The results obtained using the transducer together with a first prototype of the electronic interface built with cheap discrete elements show that positioning accuracies in the micrometer range are obtainable using this cost-effective solution. Better accuracies would also be attainable but using more involved and costly electronics interfaces.

Microwave Resonant and Zero-Field Absorption Study of Doped Magnetite Prepared by a Co-Precipitation Method

Fe3O4 and ZnxFe3-xO4 pure and doped magnetite magnetic nanoparticles (NPs) were prepared in aqueous solution (Series A) or in a water-ethyl alcohol mixture (Series B) by the co-precipitation method. Only one ferromagnetic resonance line was observed in all cases under consideration indicating that the materials are magnetically uniform. The shortfall in the resonance fields from 3.27 kOe (for the frequency of 9.5 GHz) expected for spheres can be understood taking into account the dipolar forces, magnetoelasticity, or magnetocrystalline anisotropy. All samples show non-zero low field absorption. For Series A samples the grain size decreases with an increase of the Zn content. In this case zero field absorption does not correlate with the changes of the grain size. For Series B samples the grain size and zero field absorption behavior correlate with each other. The highest zero-field absorption corresponded to 0.2 zinc concentration in both A and B series. High zero-field absorption of Fe3O4 ferrite magnetic NPs can be interesting for biomedical applications.

Precipitation of Ge nanoparticles from GeO2 glasses in transmission electron microscope

We show, using spatially resolved energy loss spectroscopy in a transmission electron microscopy (TEM), that GeO2 and GeO2-SiO2 glasses are extremely sensitive to high energy electrons. Ge nanoparticles can be precipitated in GeO2 glasses efficiently by the high-energy electron beam of a TEM. This is relevant to TEM characterization of luminescent Ge nanoparticles in silicate glasses, which may produce artificial results. (C) 2005 American Institute of Physics.

Precise determination of anomalous scattering factors of Ge by using X-ray resonant scattering

Variations of peak position of the rocking curve in the Bragg case are measured from a Ge thin crystal near the K-absorption edge. The variations are caused by a phase change of the real part of the atomic scattering factor. Based on the measurement, the values of the real part are determined with an accuracy of better than 1%. The values are the most reliable ones among those reported values so far as they are directly determined from the normal atomic scattering factors.

Laser-induced damage threshold of ZrO2 thin films prepared at different oxygen partial pressures by electron-beam evaporation

ZrO2, films were deposited by electron-beam evaporation with the oxygen partial pressure varying from 3 X 10(-3) Pa to I I X 10(-3) Pa. The phase structure of the samples was characterized by x-ray diffraction (XRD). The thermal absorption of the films was measured by the surface thermal lensing technique. A spectrophotometer was employed to measure the refractive indices of the samples. The laser-induced damage threshold (LIDT) was assessed using a 1064, nm Nd: yttritium-aluminium-garnet pulsed laser at pulse width of 12 ns. The influence of oxygen partial pressure on the microstructure and LIDT of ZrO2 films was investigated. XRD data revealed that the films changed from polycrystalline to amorphous as the oxygen partial pressure increased. The variation of refractive index at 550 nm wavelength indicated that the packing density of the films decreased gradually with increasing oxygen partial pressure. The absorptance of the samples decreased monotonically from 125.2 to 84.5 ppm with increasing oxygen partial pressure. The damage threshold, values increased from 18.5 to 26.7 J/cm(2) for oxygen partial pressures varying from 3 X 10(-3) Pa to 9 X 10(-3) Pa, but decreased to 17.3 J/cm(2) in the case of I I X 10(-3) Pa. (C) 2005 American Vacuum Society.

Laser-induced damage threshold of ZrO2 thin films prepared at different oxygen partial pressures by electron-beam evaporation

ZrO2, films were deposited by electron-beam evaporation with the oxygen partial pressure varying from 3 X 10(-3) Pa to I I X 10(-3) Pa. The phase structure of the samples was characterized by x-ray diffraction (XRD). The thermal absorption of the films was measured by the surface thermal lensing technique. A spectrophotometer was employed to measure the refractive indices of the samples. The laser-induced damage threshold (LIDT) was assessed using a 1064, nm Nd: yttritium-aluminium-garnet pulsed laser at pulse width of 12 ns. The influence of oxygen partial pressure on the microstructure and LIDT of ZrO2 films was investigated. XRD data revealed that the films changed from polycrystalline to amorphous as the oxygen partial pressure increased. The variation of refractive index at 550 nm wavelength indicated that the packing density of the films decreased gradually with increasing oxygen partial pressure. The absorptance of the samples decreased monotonically from 125.2 to 84.5 ppm with increasing oxygen partial pressure. The damage threshold, values increased from 18.5 to 26.7 J/cm(2) for oxygen partial pressures varying from 3 X 10(-3) Pa to 9 X 10(-3) Pa, but decreased to 17.3 J/cm(2) in the case of I I X 10(-3) Pa. (C) 2005 American Vacuum Society.

Influence of LiB3O5 structure on microstructure and optical properties of ZrO2, thin films prepared by electron beam evaporation

ZrO2 thin films were deposited bill using an electron beam evaporation technique on three kinds of lithium triborate (LiB3O5 or LBO) substrates with the surfaces at specified crystalline orientations. The influences of the LBO structure on the structural and optical properties of ZrO2 thin films are studied by spectrophotometer and x-ray diffraction. The results indicate that the substrate structure has obvious effects on the structural end optical properties of the film: namely. the ZrO2 thin film deposited on the X-LBO, Y-LBO and Z-LBO orients to m(-212), m(021) and o(130) directions. It is also found that the ZrO2 thin film with m(021) has the highest refractive index and the least lattice misfit.

Optical, structural and laser-induced damage threshold properties of HfO2 thin films prepared by electron beam evaporation

We prepare HfO2 thin films by electron beam evaporation technology. The samples are annealed in air after deposition. With increasing annealing temperature, it is found that the absorption of the samples decreases firstly and then increases. Also, the laser-induced damage threshold (LIDT) increases firstly and then decreases. When annealing temperature is 473K, the sample has the highest LIDT of 2.17J/cm(2), and the lowest absorption of 18 ppm. By investigating the optical and structural characteristics and their relations to LIDT, it is shown that the principal factor dominating the LIDT is absorption.

Y2O3 stabilized ZrO2 thin films deposited by electron beam evaporation: Structural, morphological characterization and laser induced damage threshold

Four kinds of Y2O3 stabilized ZrO2 (YSZ) thin films with different Y2O3 content have been prepared on BK7 substrates by electron-beam evaporation method. Structural properties and surface morphology of thin films were investigated by X-ray diffraction (XRD) spectra and scanning probe microscope. Laser induced damage threshold (LIDT) was determined. It was found that crystalline phase and microstructure of YSZ thin films was dependent on Y2O3 molar content. YSZ thin films changed from monoclinic phase to high temperature phase (tetragonal and cubic) with the increase of Y2O3 content. The LIDT of stabilized thin film is more than that of unstabilized thin films. The reason is that ZrO2 material undergoes phase transition during the course of e-beam evaporation resulting in more numbers of defects compared to that of YSZ thin films. These defects act as absorptive center and the original breakdown points. (c) 2006 Elsevier B.V. All rights reserved.

激光作用下薄膜中的电子-声子散射速率

激光功率密度达到太瓦级时，光学激光薄膜破坏中雪崩机制占主导地位．研究雪崩破坏机理，必然涉及到电子吸收激光能量的速率和电子损耗能量的速率，这些都与电子和声子的散射有密切的联系．所以，电子受到的散射速率是研究雪崩机制的前提和基础．本文分析了截断散射声子波矢对散射速率的影响，得到散射速率与电子能量的依赖关系，与其他理论及实验结果一致．同时还对耦合参数进行了修正，得到了依赖声子波矢的耦合参数，修正结果表明在不改变散射速率与高能电子能量依赖关系的基础上，散射速率整体降低了．