Optical fringe multiplication technique with TEM nano-moiré method

In this paper, a nano-moiré fringe multiplication method is proposed, which can be used to measure nano-deformation of single crystal materials. The lattice structure of Si (111) is recorded on a film at a given magnification under a transmission microscope, which acts as a specimen grating. A parallel grating (binary type) on glass or film is selected as a reference grating. A multiplied nano-moiré fringe pattern can be reproduced in a 4f optical filter system with the specimen grating and the prepared reference grating. The successful results illustrate that this method can be used to measure deformation in nanometre scale. The method is especially useful in the measurement of the inhomogeneous displacement field, and can be utilized to characterize nano-mechanical behaviour of materials such as dislocation and atomic bond failure.

Switching performance of epitaxially grown normally-off 4H-SiC JFET

Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction field effect transistor (JFET) is investigated. Typical on-state resistance Ron was 6-10mΩcm2 at VGS = 2.5V and the breakdown voltage between the range of 1.5-1.8kV was realized at VGS = -5V for normally-off like JFETs. It was found that the turn-on energy delivers the biggest part of the switching losses. The dependence of switching losses from gate resistor is nearly linear, suggesting that changing the gate resistor, a way similar to Si-IGBT technology, can easily control di/dt and dv/dt. Turn-on losses at 200°C are lower compared to those at 25°C, which indicates the influence of the high internal p-type gate layer resistance. Inductive switching numerical analysis suggested the strong influence of channel doping conditions on the turn-on switching performance. The fast switching normally-off JFET devices require heavily doped narrow JFET channel design. © (2009) Trans Tech Publications, Switzerland.